Patent application number | Description | Published |
20090283736 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode layer ( | 11-19-2009 |
20100148143 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING NONVOLATILE MEMORY ELEMENT - A nonvolatile semiconductor apparatus of the present invention comprises ( | 06-17-2010 |
20100177555 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE - The variable resistance nonvolatile storage device includes a memory cell ( | 07-15-2010 |
20100188884 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode ( | 07-29-2010 |
20100207094 | NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 08-19-2010 |
20100259966 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND NONVOLATILE SEMICONDUCTOR APPARATUS - A nonvolatile memory element comprises a first electrode ( | 10-14-2010 |
20110002154 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 01-06-2011 |
20110031465 | RESISTANCE VARIABLE ELEMENT AND MANUFACTURING METHOD THEREOF - A resistance variable element of the present invention comprises a first electrode ( | 02-10-2011 |
20110044088 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL - A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate ( | 02-24-2011 |
20110051500 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - Provided is a nonvolatile memory element which is capable of performing a stable resistance change operation at a low breakdown voltage. | 03-03-2011 |
20110075469 | RESISTANCE VARIABLE NONVOLATILE MEMORY DEVICE - Each of memory cells (MC) includes one transistor and one resistance variable element. The transistor includes a first main terminal, a second main terminal and a control terminal. The resistance variable element includes a first electrode, a second electrode and a resistance variable layer provided between the first electrode and the second electrode. A first main terminal of one of two adjacent memory cells is connected to a second main terminal of the other memory cell, to form a series path (SP) sequentially connecting main terminals of the plurality of memory cells in series. Each of the memory cells is configured such that the control terminal is a part of a first wire (WL) associated with the memory cell or is connected to the first wire associated with the memory cell, the second electrode is a part of a second wire (SL) associated with the memory cell or is connected to the second wire associated with the memory cell; and the first electrode is a part of a series path (SP) associated with the memory cell or is connected to the series path associated with the memory cell. | 03-31-2011 |
20110110143 | METHOD OF PROGRAMMING NONVOLATILE MEMORY ELEMENT - Provided is a programming method for improving the retention characteristics of information in a variable resistance nonvolatile memory element. The method includes: a first writing process of applying a first voltage V | 05-12-2011 |
20110122680 | VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE - A nonvolatile resistance variable memory device ( | 05-26-2011 |
20110182109 | VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD FOR SAME - A variable resistance nonvolatile memory device ( | 07-28-2011 |
20110233510 | NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 09-29-2011 |
20110294259 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode layer ( | 12-01-2011 |
20120044749 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL - A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate ( | 02-23-2012 |
20120074375 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE - The variable resistance nonvolatile storage device includes a memory cell ( | 03-29-2012 |
20120281453 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE - The variable resistance nonvolatile storage device includes a memory cell ( | 11-08-2012 |
20120327702 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory element includes: a first electrode layer; a second electrode layer; and a variable resistance layer which is placed between the electrode layers, and whose resistance state reversibly changes between a high resistance state and a low resistance state based on a polarity of a voltage applied between the electrode layers. The variable resistance layer is formed by stacking a first oxide layer including an oxide of a first transition metal and a second oxide layer including an oxide of a second transition metal which is different from the first transition metal. At least one of the following conditions is satisfied: (1) a dielectric constant of the second oxide layer is larger than a dielectric constant of the first oxide layer; and (2) a band gap of the second oxide layer is smaller than a band gap of the first oxide layer. | 12-27-2012 |
20130010522 | NONVOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory device ( | 01-10-2013 |
20130037775 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 02-14-2013 |
20130308371 | METHOD FOR READING DATA FROM NONVOLATILE STORAGE ELEMENT, AND NONVOLATILE STORAGE DEVICE - Provided is a method for reading data from a variable resistance nonvolatile storage element, where the operation for reading data is less susceptible to a fluctuation phenomenon of resistance values in reading the data. The method includes: detecting a current value I | 11-21-2013 |
20140036572 | METHOD FOR DRIVING NONVOLATILE STORAGE ELEMENT, AND NONVOLATILE STORAGE DEVICE - Provided is a method for driving a variable resistance nonvolatile storage element that can improve the information holding capability. The method includes: determining whether or not a current that flows through the nonvolatile storage element is larger than or equal to a first verify level IRL (Verify); determining whether or not a current that flows through the nonvolatile storage element is smaller than or equal to a second verify level IRH (Verify); and determining that the nonvolatile storage element is in the second resistance state when the current that flows through the nonvolatile storage element is smaller than a current reference level Iref, and determining that the nonvolatile storage element is in the first resistance state when the current is larger than the current reference level Iref, the current reference level Iref satisfying (IRL (Verify)+IRH (Verify))/202-06-2014 | |