Patent application number | Description | Published |
20090296031 | LIQUID CRYSTAL DISPLAY DEVICE - One of the pixel electrode and the counter electrode includes, on a protective film formed so as to cover the thin film transistor, a planar metal electrode formed so as to cover routh surface formed in the reflective pixel part; and a planar transparent electrode formed in the reflective pixel part and the transparent pixel part so as to cover the metal electrode. Another one of the pixel electrode and the counter electrode includes, on an insulating film formed so as to cover the one of the pixel electrode and the counter electrode, a plurality of linear electrodes provided in parallel with one another so as to overlap the one of the pixel electrode and the counter electrode. The transparent electrode included in the one of the pixel electrode and the counter electrode is formed of a transparent conductive film which is formed through application. | 12-03-2009 |
20100102322 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode. | 04-29-2010 |
20100134398 | DISPLAY DEVICE - A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. The display device also includes a gate electrode, a gate insulating film formed so as to cover the gate electrode, an semiconductor layer in an island shape formed on an upper surface of the gate insulating film so as to superimpose the gate electrode without protruding from the gate electrode when viewed planarly, an insulating film formed so as to cover the semiconductor layer, and a pair of electrodes electrically connected to the semiconductor layer respectively through a pair of through holes that are formed at the insulating film. The semiconductor layer is formed by sequentially laminating a crystalline semiconductor layer and an amorphous semiconductor layer. The pair of electrodes is respectively formed by sequentially laminating a semiconductor layer doped with impurities and a metal layer. | 06-03-2010 |
20100200858 | DISPLAY DEVICE - A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. At least one of the plurality of thin-film transistors includes a gate electrode, agate insulating film formed to cover the gate electrode, an interlayer insulating film formed on an upper surface of the gate insulating film and having an opening formed in an area where the gate electrode is formed in plan view, a pair of heavily-doped semiconductor films arranged on an upper surface of the interlayer insulating film with the opening interposed therebetween, a polycrystalline semiconductor film formed across the opening and formed in the area, the polycrystalline semiconductor film being electrically connected to the pair of heavily-doped semiconductor films, and a pair of electrodes formed to overlap the pair of heavily-doped semiconductor films, respectively, without overlapping the polycrystalline semiconductor film. | 08-12-2010 |
20100259713 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a first substrate and a second substrate. The first substrate includes a sheet-like first electrode formed of a transparent conductive film, a first insulator formed to cover the sheet-like first electrode, a plurality of linear second electrodes formed by a transparent conductive film on the first insulator so as to overlap the sheet-like first electrode, and a second insulator formed on the first insulator so as to cover the plurality of linear second electrodes. The first substrate and the second substrate interpose liquid crystal therebetween and are arranged to be opposed to each other. The sheet-like first electrode, the first insulator, and the plurality of linear second electrodes are provided in a pixel region on a surface of the first substrate of a side of the liquid crystal. The second insulator is made of the same material as the first insulator. | 10-14-2010 |
20110049524 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a display device including a thin-film transistor and a capacitor element, the thin-film transistor includes: a first insulating film (IN | 03-03-2011 |
20110133197 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A bottom gate-type thin film transistor includes a gate insulating film, an interlayer insulating film formed on the gate insulating film, having an opening which is formed in a formation region of a gate electrode, and a semiconductor film formed on the interlayer insulating film so as to cover the opening. The interlayer insulating film contains nitrides in an amount larger than that in the gate insulating film, and the semiconductor film includes a microcrystalline semiconductor film or a polycrystalline semiconductor film formed on semiconductor crystalline nuclei which are formed on the gate insulating film and the interlayer insulating film and contain at least Ge. | 06-09-2011 |
20110260168 | IMAGE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is an image display device including thin film transistors on a substrate, including: gate lines and drain lines intersecting the gate lines, each thin film transistor having, in a channel region, a laminate structure in which a gate electrode, a gate insulating film, and a semiconductor layer are laminated in the stated order from the substrate side; and a pair of removal regions in which parts of the gate insulating film are removed, which are formed on both sides of the gate electrode and formed in a channel width direction of the channel region, in which when W represents a width of the gate electrode in the channel width direction of the channel region, and R represents a width of the gate insulating film in the channel width direction, which is sandwiched between the pair of removal regions, R≧W is satisfied. | 10-27-2011 |