Yoshiaki Hasegawa, Shiga JP
Yoshiaki Hasegawa, Shiga JP
Patent application number | Description | Published |
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20080272462 | Nitride-Based Semiconductor Device and Method for Fabricating the Same - A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure | 11-06-2008 |
20080273562 | Nitride Semiconductor Device and Method for Fabricating the Same - A nitride semiconductor device | 11-06-2008 |
20090022193 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate | 01-22-2009 |
20090135875 | SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME - A semiconductor laser ( | 05-28-2009 |
20090159921 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SUCH NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor device according to the present invention includes a n-GaN substrate | 06-25-2009 |
20090294797 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device according to the present invention includes: a GaN substrate | 12-03-2009 |
20100226401 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure | 09-09-2010 |
20100230713 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SUCH GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×10 | 09-16-2010 |
20110215340 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device according to the present invention includes: a GaN substrate | 09-08-2011 |
20110304025 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR - A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substrate | 12-15-2011 |
20120002693 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure | 01-05-2012 |