Yorisaki, JP
Shingo Yorisaki, Hachioji JP
Patent application number | Description | Published |
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20100304510 | FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle. | 12-02-2010 |
20110136272 | FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle. | 06-09-2011 |
20110175634 | FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle. | 07-21-2011 |
Shingo Yorisaki, Tokyo JP
Patent application number | Description | Published |
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20090017565 | MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A probe is contacted to a test pad, without destroying the circuit formed in the chip at the time of a probe test. Therefore, a load jig, a pressing tool, an elastomer, an adhesion ring, and a plunger are made into one by fixation with a nut and a bolt. The elastic force of the spring installed between the spring retaining jig and the load jig acts so that the member used as these one may be depressed toward pad PD. The thrust transmitted from the spring in a plunger to a thin films sheet is used only for the extension of a thin films sheet. | 01-15-2009 |
20090130785 | MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - As the thickness of the card holder for preventing warping of a multilayered wiring substrate | 05-21-2009 |
20100277192 | MANUFACTORING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A probe is contacted to a test pad, without destroying the circuit formed in the chip at the time of a probe test. Therefore, a load jig, a pressing tool, an elastomer, an adhesion ring, and a plunger are made into one by fixation with a nut and a bolt. The elastic force of the spring installed between the spring retaining jig and the load jig acts so that the member used as these one may be depressed toward pad PD. The thrust transmitted from the spring in a plunger to a thin films sheet is used only for the extension of a thin films sheet. | 11-04-2010 |
Toma Yorisaki, Tokyo JP
Patent application number | Description | Published |
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20150270112 | SPUTTER NEUTRAL PARTICLE MASS SPECTROMETRY APPARATUS - A sputter neutral particle mass spectrometry apparatus includes a sample table holding a sample which is a mass spectrometry target, and comprising a temperature control mechanism for the sample, an ion beam irradiation device which irradiates an ion beam on the sample to generate neutral particles, a laser irradiation device which irradiates the neutral particles with a laser to obtain photoexcited ions, a mass spectrometer which draws in the drawn out photoexcited ions and performs mass analysis, a driving system mirror which is provided retractably on a laser light path between the laser irradiation device and the sample table, and reflects the laser when positioned within the laser light path, and, a profiler which is arranged in a reflective direction of the driving system mirror and detects a feature of the laser. | 09-24-2015 |
20150270113 | SPUTTER NEUTRAL PARTICLE MASS SPECTROMETRY APPARATUS - A sputter neutral particle mass spectrometry apparatus includes a sample table holding a sample which is a mass spectrometry target, an ion beam irradiation device which irradiates an ion beam on the sample held by the sample table to generate neutral particles in an adjacent region of the sample, a light beam irradiation device which irradiates a light beam on the neutral particles positioned in the adjacent region to obtain photoexcited ions, a draw-out electrode which draws out the photoexcited ions, a mass spectrometer which draws in the drawn out photoexcited ions to perform mass analysis, and an optical element which is provided in a light path after the light beam passes the adjacent region, and changes a traveling direction of the light beam so that the light beam passes the adjacent region again. | 09-24-2015 |