Yoon-Gyu
Yoon-Gyu Lee, Suwon-Si KR
Patent application number | Description | Published |
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20090211903 | INDIUM ZINC OXIDE BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND INDIUM ZINC OXIDE BASED THIN FILM - Disclosed are an indium (In) zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and an In Zn oxide based thin film deposited using the In Zn oxide based sputtering target. The In Zn oxide based sputtering target has a composition of (MO | 08-27-2009 |
20090211904 | ZINC OXIDE BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND ZINC OXIDE BASED THIN FILM - Disclosed are a zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and a Zn oxide based thin film deposited using the Zn oxide based sputtering target. The Zn oxide based sputtering target has a composition of In | 08-27-2009 |
Yoon-Gyu Lee, Gyeonggi-Do KR
Patent application number | Description | Published |
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20090140198 | Method of preparing metal oxide suspension - Disclosed herein is a method of preparing a metal oxide suspension, which is advantageous due to the prevention of hydration and agglomeration of the metal oxide and a simple preparation process. The method of preparing a metal oxide suspension according to this invention includes preparing metal oxide, mixing the metal oxide with a solvent and a surface treating agent to obtain a mixture, and wet milling the mixture such that the metal oxide of the mixture has a nanoscale particle size and the metal oxide is uniformly dispersed in the mixture. | 06-04-2009 |
20140239295 | ZINC OXIDE-BASED SPUTTERING TARGET, METHOD OF PREPARING THE SAME, AND THIN FILM TRANSISTOR INCLUDING A BARRIER LAYER DEPOSITED BY THE ZINC OXIDE-BASED SPUTTERING TARGET - Provided are a zinc oxide-based sputtering target, a method of preparing the same, and a thin film transistor including a barrier layer deposited by the zinc oxide-based sputtering target. The zinc oxide-based sputtering target includes a sintered body that is composed of zinc oxide in which indium oxide is doped in a range from about 1% w/w to about 50% w/w. A backing plate is coupled to a back of the sintered body. The backing plate supports the sintered body. | 08-28-2014 |
Yoon-Gyu Song, Suwon-Si KR
Patent application number | Description | Published |
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20100068914 | MULTI-SOCKET GUIDE AND TEST DEVICE COMPRISING THE SAME - A multi-socket guide for guiding a semiconductor package to a semiconductor package testing device includes a housing, a guiding unit disposed in the housing, the guiding unit guiding the housing to the semiconductor package testing device, and a mounting unit disposed in the housing, the mounting unit receiving the semiconductor package, wherein a size of the mounting unit corresponds to a size of a ball area of the semiconductor package. | 03-18-2010 |