Patent application number | Description | Published |
20090131684 | Photoacid generator, chemically amplified resist composition including the same, and associated methods - A photoacid generator represented by Formula 1 or Formula 2: | 05-21-2009 |
20100093172 | METHOD OF FORMING FINE PATTERNS OF A SEMICONDUCTOR DEVICE - A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent. | 04-15-2010 |
20110027993 | METHODS OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE - A method of forming fine patterns of a semiconductor device is provided. The method includes forming plural preliminary first mask patterns, which are spaced apart from each other by a first distance in a direction parallel to a surface of a substrate, on the substrate; forming an acid solution layer on the substrate to cover the plural preliminary first mask patterns; forming plural first mask patterns which are spaced apart from each other by a second distance larger than the first distance, of which upper and side portions are surrounded by acid diffusion regions having first solubility; exposing the first acid diffusion regions by removing the acid solution layer; forming a second mask layer having second solubility lower than the first solubility in spaces between the acid diffusion regions; and forming plural second mask patterns located between the plural first mask patterns, respectively, by removing the acid diffusion regions by the dissolvent. | 02-03-2011 |
20110053362 | METHOD OF FORMING A MASK PATTERN, METHOD OF FORMING A MINUTE PATTERN, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns. | 03-03-2011 |
20110244689 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first mask pattern on a substrate by using a material including a polymer having a protection group de-protectable by an acid, the first mask pattern having a plurality of holes; forming a capping layer on an exposed surface of the first mask pattern, the capping layer including an acid source; diffusing the acid source into the first mask pattern so that the protection group becomes de-protectable from the polymer in the first mask pattern; forming a second mask layer on the capping layer, the second mask layer separate from the first mask pattern and filling the plurality of holes in the first mask pattern; and forming a plurality of second mask patterns in the plurality of holes by removing the capping layer and the first mask pattern. | 10-06-2011 |
20110275020 | Methods Of Forming Photoresist Patterns - Methods of forming photoresist patterns may include forming a photoresist layer on a substrate, exposing the photoresist layer using an exposure mask, forming a preliminary pattern by developing the exposed photoresist layer and treating a surface of the preliminary pattern using a treatment agent that includes a coating polymer. | 11-10-2011 |
20120028434 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ACID DIFFUSION - A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate. | 02-02-2012 |
20130034965 | METHODS OF FORMING FINE PATTERNS USING DRY ETCH-BACK PROCESSES - In a method of fabricating patterns in an integrated circuit device, first mask patterns, sacrificial patterns, and second mask patterns are formed on a target layer such that the sacrificial patterns are provided between sidewalls of adjacent ones of the first and second mask patterns. The sacrificial patterns between the sidewalls of the adjacent ones of the first and second mask patterns are selectively removed using a dry etch-back process, and the target layer is patterned using the first and second mask patterns as a mask. | 02-07-2013 |
20130040448 | METHODS OF FORMING METAL OR METAL NITRIDE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES - In a method of forming a metal or metal nitride pattern, a metal or metal nitride layer is formed on a substrate, and a photoresist pattern is formed on the metal or metal nitride layer. An over-coating composition is coated on the metal or metal nitride layer and on the photoresist pattern to form a capping layer on the photoresist pattern. The over-coating composition includes a polymer having amine groups as a side chain or a branch and a solvent. A remaining portion of the over-coating composition is removed by washing with a hydrophilic solution. The metal or metal nitride layer is partially removed using the capping layer and the photoresist pattern as an etching mask. | 02-14-2013 |
20140124834 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device is disclosed comprising the steps of: providing a substrate having a first region, a second region and a plurality of gate electrodes which are formed on the first and second regions of the substrate; forming a mask film to expose the first region of the substrate while covering the second region of the substrate, such that the mask film has a negative lateral profile at a boundary between the first and second regions of the substrate; forming sigma trenches in the first region of the substrate by etching the first region of the substrate using the mask film and the gate electrodes as a mask; and forming an epitaxial layer in each of the sigma trenches. | 05-08-2014 |