Patent application number | Description | Published |
20090087931 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE PACKAGE - Provided is a method of manufacturing an LED package, the method including preparing a mold die which includes an upper surface and a lower surface having an outer circumferential surface and a concave surface surrounded by the outer circumferential surface, the mold die having an outlet extending from the upper surface to the lower surface; preparing a base having a light emitting section formed therein; forming an inlet formed in a predetermined region of the base excluding the region where the light emitting section is formed; positioning the mold die on the light emitting section; forming a mold member by injecting a molding compound into the inlet of the base; and removing the mold die. | 04-02-2009 |
20090121276 | NONVOLATILE MEMORY DEVICES WITH RECESSED WORD LINES - A nonvolatile memory device includes a substrate, a device isolation region disposed in the substrate and abutting a sidewall of an active region defined in the substrate, the device isolation region having a recessed portion and a word line crossing the active region and the recessed portion of the device isolation region and conforming to the sidewall adjacent the recessed portion of the device isolation region. The nonvolatile memory device may further include a sense line crossing the active region and the device isolation region parallel to the word line, the sense line overlying a portion of the device isolation region having a top surface at substantially the same level as a top surface of the active region. An edge of the active region adjacent the sidewall may be rounded. | 05-14-2009 |
20110175153 | Semiconductor Device Having Transistor with Vertical Gate Electrode and Method of Fabricating the Same - A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern. | 07-21-2011 |
20130194794 | LIGHT EMITTING DEVICE - A light emitting device includes: a support unit; a luminous element mounted on the support unit; and a wavelength conversion unit formed on the support unit to cover the luminous element and configured as an encapsulant containing first light wavelength converters emitting light having a relatively long wavelength and second light wavelength converters emitting light having a relatively short wavelength, wherein the wavelength conversion unit includes a first mixture region adjacent to the luminous element and a second mixture region above the first mixture region, a relatively large amount of first light wavelength converters are distributed in the first mixture region, and a relatively large amount of second light wavelength converters are distributed in the second mixture region. | 08-01-2013 |
20130214411 | METAL INTERCONNECT OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a metal interconnect of a semiconductor device including: forming a interconnect hole by patterning an interlayer insulating film formed on a substrate; performing a nitriding treatment on a surface of the interlayer insulating film by injecting a gas including nitrogen into a deposition apparatus in which the substrate is disposed; forming a diffusion preventing film by injecting the gas including nitrogen and a metal source gas into the deposition apparatus together; filling the interconnect hole with a metal; and removing the metal formed on a part other than the interconnect hole by a chemical mechanical polishing (CMP) process. Accordingly, the mechanical strength of the interlayer insulating film is increased, thereby preventing scratches or defects that are generated during the chemical mechanical polishing process. | 08-22-2013 |
20130224908 | METHOD OF MANUFACTURING PRAM USING LASER INTERFERENCE LITHOGRAPHY - A method of manufacturing a phase-change random access memory includes: sequentially depositing an insulating layer, a first electrode layer, a phase change material layer, and a transfer material layer on a substrate; forming an array pattern in the transfer material layer using a laser interference lithography process; forming a metal layer on the transfer material layer having the array pattern formed; forming a second electrode layer by removing the transfer material layer; and forming a phase change layer by etching the phase change material layer using the second electrode layer as a mask. Accordingly, the manufacturing process of the phase-change random access memory may achieve an increase in speed and may be simplified. | 08-29-2013 |
20130242659 | SPLIT-GATE TYPE NONVOLATILE MEMORY DEVICE, SEMICONDUCTOR DEVICE HAVING SPLIT-TYPE NONVOLATILE MEMORY DEVICE EMBEDDED THEREIN, AND METHODS OF FORMING THE SAME - A split-gate type nonvolatile memory device includes a semiconductor substrate having a first conductivity type, a deep well having a second conductivity type in the semiconductor substrate, a pocket well having the first conductivity type in the deep well, a source line region having the second conductivity type in the pocket well, an erase gate on the source line region, and a first floating gate and a first control gate stacked sequentially on the pocket well on a side of the erase gate. The pocket well is electrically isolated from the substrate by the deep well, so that a negative voltage applied to the pocket well may not adversely affect operation of other devices formed on the substrate. | 09-19-2013 |
20140356547 | SYSTEM AND METHOD OF IMPROVING IMPLANT QUALITY IN A PLASMA-BASED IMPLANT SYSTEM - A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode. | 12-04-2014 |