Yong Tae
Yong Tae An, Gwangmyeong-Si KR
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20140004346 | METHOD OF SYNTHESIS OF HIGH DISPERSED SPHERICAL Y OR Nb DOPED LITHIUM TITANATE OXIDE USING TITANIUM TETRACHLORIDE AND LITHIUM HYDROXIDE | 01-02-2014 |
Yong Tae Cho, Seoul KR
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20100211992 | DATA SECURITY APPARATUS - A data security apparatus fragments original data into a plurality of data, blocks the fragmented data, and distributes and stores the blocked data over and in respective storage medium. The data security apparatus includes a storage having a first block, into which original data of a file is fragmented and blocked, distributed and stored, a security storage medium having a second block, into which the original data is fragmented and blocked, distributed and stored, and a distributed storage management module performing data interface among the storage, the security medium, and an operating system (OS) system, fragmenting and blocking the original data, and distributing and storing the blocked data over and in the storage and the security storage medium. | 08-19-2010 |
Yong Tae Ha, Daegu KR
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20150140311 | METHOD FOR REMOVING ODOR OF ARTIFICIAL LEATHER AND ARTIFICIAL LEATHER MANUFACTURED USING THE SAME - A method is provided for removing a volatile organic compound (VOC) contained in an artificial leather fabric and odor caused by the volatile organic compound by coating the artificial leather fabric with an adsorbent which reacts with a noxious substance containing the volatile organic compound (VOC); and immersing; washing; and drying the reacted artificial leather fabric. The method includes coating the adsorbent and immobilizing the volatile organic compound through a reaction, to prevent volatilization of the organic compound or reduce an amount thereof. Further, after the reaction between the artificial leather fabric and the adsorbent, the artificial leather fabric is washed, to remove the volatile organic compound immobilized on a surface of the fabric from the artificial leather. | 05-21-2015 |
Yong Tae Jang, Daejeon KR
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20150348653 | MAGNETIC JACK TYPE IN-VESSEL CONTROL ELEMENT DRIVE MECHANISM - A magnetic jack type in-vessel control element drive mechanism includes: an upper coil assembly which includes a first sleeve configured to coaxially wrap a control element drive shaft, a first coil, and a first coil housing which is externally coupled to the first sleeve; a lower coil assembly which includes a second sleeve configured to coaxially wrap the control element drive shaft, a second coil, and a second coil housing which is externally coupled to the second sleeve, wherein the lower coil assembly is located under the upper coil assembly, a connecting member which connects the upper coil assembly and the lower coil assembly; a support tube which extends downward from the lower coil assembly; a motor assembly which is located between the control element drive shaft, and the first and second sleeves; and an anti-separation cap which prevents separation of the motor assembly. | 12-03-2015 |
Yong Tae Jeon, Pohang-Si KR
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20160098358 | PCI DEVICE, INTERFACE SYSTEM INCLUDING THE SAME, AND COMPUTING SYSTEM INCLUDING THE SAME - A peripheral component interconnect (PCI) device includes a first memory which includes a plurality of page buffers, a base address register which includes a plurality of base addresses, and a first address translation unit which translates each of the plurality of base addresses to a corresponding one of a plurality of virtual addresses. A map table includes a plurality of map table entries each accessed in correspondence to each of the plurality of virtual addresses, and maps each of the plurality of virtual addresses onto a physical address of physical addresses of the plurality of page buffers. The first address translation unit translates each of the plurality of virtual addresses to a corresponding one of the physical addresses using the map table. | 04-07-2016 |
Yong Tae Joo, Ulwang-Si KR
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20160001612 | LOW NOISE TIRE - The present disclosure relates to a low noise tire, and more specifically, to a low noise tire that includes: a sealant layer adhered to an inside surface of an inner liner of the tire; and a sound-absorbing material layer adhered to the sealant layer, in which the sound-absorbing material layer includes 50 to 90 wt % of a polypropylene melt-blown fiber and 10 to 50 wt % of a polymer fiber. | 01-07-2016 |
Yong Tae Jun, Cheongju-Si Chungcheongbuk-Do KR
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20160056122 | SEMICONDUCTOR PACKAGE HAVING OVERHANG PORTION - A semiconductor package may include a substrate, and a structural body disposed over the substrate. The semiconductor package may include a semiconductor chip stacked over the structural body, and having an overhang portion projecting over a side surface of the structural body and overhanging out over the side surface of the structural body. The semiconductor package may include one or more bonding pads disposed on the overhang portion, and one or more wires electrically coupling the bonding pads to the substrate. The semiconductor package may include a wire fixing film attached onto the structural body, and overhanging out over the side surface of the structural body to fix the one or more wires. | 02-25-2016 |
Yong Tae Kiim, Suwon-Si KR
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20140198528 | WAVELENGTH CONVERSION CHIP FOR A LIGHT EMITTING DIODE, AND METHOD FOR MANUFACTURING SAME - There is provided a method of manufacturing a wavelength converted LED chip, including attaching a plurality of LED chips to a chip alignment region of an upper surface of a temporary support plate, forming a conductive bump on the electrode of the respective LED chips, forming a phosphor-containing resin encapsulation part in the chip alignment region to cover the conductive bump, polishing the phosphor containing resin encapsulation part, forming the wavelength converted LED chips by cutting the provided phosphor containing resin encapsulation part between the LED chips, the wavelength converted LED chip including a wavelength conversion layer obtained from the phosphor containing resin encapsulation part and formed on lateral surfaces and an upper surface of the wavelength converted LED chip, and removing the temporary support plate from the wavelength converted LED chip. | 07-17-2014 |
Yong Tae Kwon, Suwon-Si KR
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20120286419 | SEMICONDUCTOR PACKAGE WITH INTERPOSER BLOCK THEREIN - A semiconductor package substrate is provided. The package substrate includes a mold base and an interposer block embedded in the mold base, said interposer block having a plurality of vertical conductive lines therein. A metallization layer is formed on the surface of the interposer block or the mold base, said metallization layer being electrically connected to at least one of the vertical conductive lines. A semiconductor chip may be mounted on or embedded in the mold base. | 11-15-2012 |
20150137346 | STACKED SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - Disclosed herein is a stacked semiconductor package in which semiconductor chips having various sizes are stacked. In accordance with one aspect of the present disclosure, a stacked semiconductor package includes a first semiconductor chip structure provided with a first semiconductor chip, a first mold layer surrounding the first semiconductor chip, and a first penetration electrode passing through the first mold layer and electrically connected to the first semiconductor chip, and a second semiconductor chip structure vertically stacked on the first semiconductor chip structure and provided with a second semiconductor chip and a second penetration electrode electrically connected to the first penetration electrode, wherein the first semiconductor chip structure may have the same size as the second semiconductor chip structure. | 05-21-2015 |
20150187742 | SEMICONDUCTOR PACKAGE, FABRICATION METHOD THEREFOR, AND PACKAGE-ON PACKAGE - Provided is a method of manufacturing a semiconductor package including a through wiring having precision and a low process defect. The semiconductor package includes an insulating substrate including a first through portion and a second through portion; a through wiring which fills the first through portion, and is located to penetrate the insulating substrate; a semiconductor chip which is located in the second through portion, and is electrically connected to the through wiring; a molding member molding the semiconductor chip and the insulating substrate; and a re-wiring pattern layer which is located at a lower side of the insulating substrate, and electrically connects the through wiring and the semiconductor chip. | 07-02-2015 |
Yong Tae Kyeon, Suwon-Si KR
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20100243308 | SEMICONDUCTOR MEMORY MODULE AND ELECTRONIC COMPONENT SOCKET FOR COUPLING WITH THE SAME - The present invention relates to a semiconductor memory module and an electronic component socket for coupling with the same. A printed circuit board of the semiconductor memory module includes three signal pad arrays longitudinally formed in a row on one sides of a first surface, a second surface and a third surface thereof. Each signal pad array includes a plurality of signal pads. An electronic component socket for coupling with the printed circuit board includes thee pin arrays. Thus, an increased number of the signal pads can be provided while retaining the size of the memory module and the electronic component socket. | 09-30-2010 |
Yong Tae Lee, Changwon-Si KR
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20140112820 | BETA-BASED TITANIUM ALLOY WITH LOW ELASTIC MODULUS - A beta-based titanium alloy with a low elastic modulus includes 37 wt. % to 41 wt. % niobium (Nb), 5 wt. % to 8 wt. % zirconium (Zr), and a balance of titanium (Ti), with unavoidable impurities, and having an elastic modulus of 47 GPa or lower. The beta-based titanium alloy has a much lower elastic modulus than the typical biomedical titanium alloys, and thus can resolve the problem of so-called “stress shield effect.” Therefore, the beta-based titanium alloy can be widely used as a material for general civilian goods such as eyewear frames and headsets and sports and leisure goods, as well as a biomedical material for artificial bones, artificial teeth and artificial hip joints. | 04-24-2014 |
Yong Tae Lee, Daejeon-City KR
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20090040372 | DIGITAL BROADCASTING TRANSMITTING/RECEIVING APPARATUS AND METHOD - Provided are a digital broadcasting transmitting/receiving apparatus and method. By converting content of a main-program to a stream, converting content of a sub-program forming a single digital broadcasting service through synchronization with the main-program by being subordinated to the main-program to a stream, generating program configuration information containing stream conversion information of the main-program and stream conversion information of the sub-program, multiplexing the converted main-program stream and the generated program configuration information and real-time transmitting the multiplexed signal, and transmitting the converted sub-program stream in non-real-time, various and new premium services with compatibility with existing digital broadcasting services can be provided to users. | 02-12-2009 |
Yong Tae Lee, Daejeon-Si KR
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20140063341 | METHOD AND APPARATUS FOR SCALABLE BROADCAST - Disclosed are a method and an apparatus for a scalable broadcast. The method includes scalably dividing a broadcast frequency band into segments, scalably dividing a video image into segments, and linking the segment of the broadcast frequency band to the scalably divided video image, and broadcasting the linked segments to at least one receiving apparatus. | 03-06-2014 |
Yong Tae Moon, Seoul KR
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20090250685 | LIGHT EMITTING DEVICE - Disclosed are a light emitting device. The light emitting device includes a first conductive semiconductor layer, a light emitting layer, a protective layer, a nano-layer and a second conductive semiconductor layer. The light emitting layer is formed on the first conductive semiconductor layer. The protective layer is formed on the light emitting layer. The nano-layer is formed on the protective layer. The second conductive semiconductor layer is formed on the nano-layer. | 10-08-2009 |
20100123167 | METHOD FOR MANUFACTURING GALLIUM OXIDE BASED SUBSTRATE, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE LIGHT EMITTING DEVICE - A light emitting device includes a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. | 05-20-2010 |
20100163902 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device. The light emitting device includes a light emitting structure comprising an active layer to generate first light, a first conductive semiconductor layer on the active layer, and a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers, wherein a portion of the light emitting structure is implanted with at least one element which generates second light from the first light. | 07-01-2010 |
20100187554 | LIGHT EMITTING DEVICE HAVING VERTICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed. | 07-29-2010 |
20100216271 | METHOD FOR FABRICATING LIGHT EMITTING DEVICE - Provided is a method for fabricating a light emitting device. The method comprises forming a gallium oxide layer, forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer, forming a conductive substrate on the second conductive type semiconductor layer, separating the gallium oxide layer, and forming a first electrode on the first conductive type semiconductor layer. | 08-26-2010 |
20110147771 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an oxide including gallium aluminum over a gallium oxide substrate, a nitride including gallium aluminum over the oxide including gallium aluminum, and a light emitting structure over the nitride including gallium aluminum. | 06-23-2011 |
20110156088 | LIGHT EMITTING DEVICE - A light emitting device includes at least one particle over the light emitter. Light at a first wavelength travels from the emitter along a first path adjacent to the particle and at a second wavelength along a second path that passes through the particle. The particle converts the light on the second path from the first wavelength into a second wavelength. The light at the first wavelength mixes with the light at the second wavelength to form light of a third wavelength, which may be white light or another color. | 06-30-2011 |
20110198562 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device. In one embodiment, a light emitting device includes: a substrate including β-Ga203; a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; an electrode on the light emitting structure; and a porous layer at a lateral surface region of the substrate. | 08-18-2011 |
20110227039 | NITRIDE-BASED LIGHT EMITTING DEVICE - A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer. | 09-22-2011 |
20110241053 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device. The light emitting device includes a light emitting structure comprising an active layer to generate first light, a first conductive semiconductor layer on the active layer, and a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers, wherein a portion of the light emitting structure is implanted with at least one element which generates second light from the first light. | 10-06-2011 |
20110284821 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer. | 11-24-2011 |
20110291127 | LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE - Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer. | 12-01-2011 |
20120007040 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers. | 01-12-2012 |
20120007041 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes: a second conductive semiconductor layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; and a second electrode layer including a reflective layer under the second conductive semiconductor layer. The active layer includes a second active layer that actually emits light on the reflective layer and a first active layer that does not emit light on the second active layer. A distance between the reflective layer and the second active layer satisfies a constructive interference condition. | 01-12-2012 |
20120012815 | LIGHT EMITTING DEVICE - Disclosed herein is a light emitting device including a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer including at least one combination of a well layer of a first composition formed of a nitride-semiconductor material having first electronic energy and a barrier layer of a second composition formed of a nitride-semiconductor material having higher electronic energy than the first electronic energy, and an interface layer disposed between the second conductivity-type semiconductor layer and the active layer or between the first conductivity-type semiconductor layer and the active layer. The interface layer includes first, second and third layers having different energy bandgaps, the energy bandgaps of the first and second layers are greater than the energy bandgap of the barrier layer, and the energy bandgap of the third layer is less than the energy bandgap of the barrier layer. | 01-19-2012 |
20120015466 | METHOD FOR FABRICATING LIGHT EMITTING DEVICE - Provided is a method for fabricating a light emitting device. The method includes forming a gallium oxide layer; forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer; forming a non-conductive substrate on the second conductive type semiconductor layer; separating the gallium oxide layer forming a conductive substrate on the first conductive type semiconductor layer; and separating the non-conductive substrate. | 01-19-2012 |
20120043526 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING THE SAME - Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer. | 02-23-2012 |
20120104356 | LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers. | 05-03-2012 |
20120115267 | METHOD FOR FABRICATING LIGHT EMITTING DEVICE - Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum. | 05-10-2012 |
20120119227 | METHOD FOR MANUFACTURING GALLIUM OXIDE BASED SUBSTRATE, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE LIGHT EMITTING DEVICE - A light emitting device comprises a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. | 05-17-2012 |
20120119254 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type first semiconductor layer, an active layer, a second conductive type second semiconductor layer, a reliability enhancement layer, and a second conductive type third semiconductor layer. The active layer is disposed on the first conductive type first semiconductor layer. The second conductive type second semiconductor layer is disposed on the active layer. The reliability enhancement layer is disposed on the second conductive type second semiconductor layer. The second conductive type third semiconductor layer is disposed on the reliability enhancement layer and comprises a light extraction pattern. The reliability enhancement layer and the active layer are spaced apart from each other by a distance of 0.3 μm to 5 μm. | 05-17-2012 |
20120126202 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device of the embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and a active layer including a quantum well and a quantum bather between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the energy band gap of the quantum well is gradually changed into parabolic toward a center of the quantum well. | 05-24-2012 |
20120132890 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased. | 05-31-2012 |
20120319079 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers. | 12-20-2012 |
20130119402 | LIGHT EMITTING DEVICE - Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum. | 05-16-2013 |
20130228746 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers. | 09-05-2013 |
20140361246 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device includes a first conductive semiconductor layer ( | 12-11-2014 |
20150021545 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - The light emitting device includes a first conductive type semiconductor layer ( | 01-22-2015 |
20150255669 | LIGHT EMITTING ELEMENT - Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer | 09-10-2015 |
20150270436 | LIGHT-EMITTING DEVICE - The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive In | 09-24-2015 |
20150287876 | LIGHT-EMITTING DEVICE - One embodiment of the present invention relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system. The light-emitting device, according to the one embodiment, comprises: a first conductive semiconductor layer ( | 10-08-2015 |
Yong Tae Park, Uijeongbu-Si KR
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20100098033 | METHOD FOR TRANSMITTING NETWORK DATA - A method for transmitting network data is provided. A sender and receivers can stably transmit and receive data using a packet reception result report request frame and a packet reception result report frame, and data stability at the receivers can be improved through retransmission of network-coded data. In addition, service can be provided at a high transfer rate and with good data stability by adjusting a transfer rate according to a network environment using adaptive transfer rate control. | 04-22-2010 |
20110060850 | MOBILE DEVICE OF SUPPORTING UART AND USB COMMUNICATION USING SAME CONNECTOR AND OPERATING METHOD THERE-OF - A mobile device for supporting universal asynchronous receiver/transmitter (UART) communication and universal serial bus (USB) communication using a single connector and a method thereof are provided. The mobile device includes a USB connector, a USB module selectively connected with the connector to communicate with an external USB device, at least one internal UART device selectively connected with the connector to communicate with an external UART device, a determiner configured to determine whether the connector has been coupled to the external USB device or the external UART device based on a signal applied to at least one of pins of the connector, a switching unit configured to selectively connect data lines of the connector to one among the USB module and the at least one internal UART module based on a determination result of the determiner, and a central processing unit (CPU) configured to control the switching unit, thereby automatically switching the data lines of the connector to an appropriate internal module according to whether a device coupled to the connector is a USB device or a UART device. | 03-10-2011 |
20150018027 | APPARATUS AND METHOD FOR INTER-VEHICLE COMMUNICATION - An apparatus and a method for inter-vehicle communication includes a communicator communicating with another vehicle and a position determiner verifying position information of a vehicle, A controller is configured to synchronize a time point of transmitting/receiving a message to/from the other vehicle through a signal from the position determiner, performing a phase control for transmitting message, and transmitting the message to the other vehicle at a determined time point of transmitting the message according to the phase control result. | 01-15-2015 |
Yong Tae Park, Sejong-Si KR
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20140356707 | NEGATIVE ELECTRODE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY, METHOD FOR PREPARING THE SAME AND RECHARGEABLE LITHIUM BATTERY INCLUDING THE SAME - The present invention relates to a negative electrode active material for a rechargeable lithium battery, a method for preparing the same, and a rechargeable lithium battery including the same. This invention provides a negative electrode active material for a rechargeable lithium battery, comprising a core part including a spherical graphite, and a coating layer containing a low crystalline carbon material and coated on a surface of the core part, wherein a pore volume of less than or equal to 2000 nm is 0.08 ml/g or less, and a tap density is 1.1 g/cm | 12-04-2014 |
20150155557 | NEGATIVE ELECTRODE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY, METHOD FOR PREPARING THE SAME AND RECHARGEABLE LITHIUM BATTERY USING THE SAME - The present invention relates to a negative electrode active material for a rechargeable lithium battery, a method for preparing the same, and a rechargeable lithium battery using the same. This invention provides a negative electrode active material for a rechargeable lithium battery, comprising a highly crystalline spherical natural graphite, wherein a Raman R value is 0.03 or more and 0.15 or less, and an internal porosity (ml/g) is 0.15 or less. | 06-04-2015 |
Yong Tae Park, Uijeongbu KR
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20140379250 | APPARATUS AND METHOD FOR INTER-VEHICLE COMMUNICATION - There are provided an apparatus and a method for inter-vehicle communication. The apparatus includes a communication unit configured to perform communication with another vehicle, a positioning unit configured to obtain positional information of a vehicle, and a controller configured to synchronize time instances of transmitting/receiving messages to/from the another vehicle using a signal from the positioning unit, to set communication conditions based on communication congestion with the another vehicle, and to perform transmitting/receiving messages to/from the another vehicle at the synchronized time instance according to the communication conditions. | 12-25-2014 |
Yong Tae Shin, Pohang KR
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20100175795 | Steel Wire Rod for High Strength and High Toughness Spring Having Excellent Cold Workability, Method for Producing the Same and Method for Producing Spring by Using the Same - Provided is a steel wire rod for a high strength and high toughness spring having excellent cold workability, the steel wire rod having a composition comprising: in weight %, C: 0.4 to 0.7%, Si: 1.5 to 3.5%, Mn: 0.3 to 1.0%, Cr: 0.01 to 1.5%, Ni: 0.01 to 1.0%, Cu: 0.01 to 1.0%, B: 0.005 to 0.02%, Al: 0.1% or less, O: 0.0020% or less, P: 0.02% or less, S: 0.02% or less, N: 0.02% or less, remainder Fe, and other unavoidable impurities, having a microstructure formed of ferrite and pearlite, and in which a prior (before cooling) austenite grain size is 8 μm or less. | 07-15-2010 |
Yong-Tae Cho, Gyeonggi-Do KR
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20130299942 | CAPACITOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer; forming cylinder type lower electrodes in the open parts; forming a first upper electrode over an entire surface of a structure including the cylinder type lower electrodes to fill the cylinder type lower electrodes; defining a through hole that passes through portions of the first upper electrode and the support layer; removing the mold layer through the through hole and exposing the cylinder type lower electrodes; forming a second upper electrode to fill the through hole and spaces between the cylinder type lower electrodes; and forming a third upper electrode to connect the second upper electrode and the first upper electrode with each other. | 11-14-2013 |
Yong-Tae Jeon, Seoul KR
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20150149897 | APPARATUS AND METHOD FOR EDITING DOCUMENT - An apparatus and method for editing a document are disclosed. The apparatus is installed on a first terminal, that is, a mobile terminal of a user, in order to edit a document of a document file stored in the first terminal. The apparatus includes a document storage unit and an edited document generation unit. The document storage unit stores at least one document file. The edited document generation unit extracts an area of interest from a document file stored in the document storage unit and displayed on a display unit of the first terminal, and generates an edited document. The document file is a portable document format (PDF) file. | 05-28-2015 |
Yong-Tae Kwon, Suwon-City KR
Patent application number | Description | Published |
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20130241042 | SEMICONDUCTOR CHIP PACKAGE, SEMICONDUCTOR MODULE, AND METHOD FOR MANUFACTURING SAME - In one embodiment, a semiconductor chip package includes an insulation frame having an opening part formed in a center thereof and a via hole formed around the opening part; a semiconductor chip disposed cm the opening part; a conductive part filling the via hole; an inner insulation layer formed on bottom surfaces of the semiconductor chip and the insulation frame so as to expose a bottom surface of the conductive part; and an inner signal pattern formed on the inner insulation layer and electrically connecting the semiconductor chip and the conductive part. Embodiments also relate to a semiconductor module including a vertical stack of a plurality of the semiconductor chip packages, and to a method for manufacturing the same. | 09-19-2013 |
Yong-Tae Oh, Seoul KR
Patent application number | Description | Published |
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20080239783 | Semiconductor memory devices having strapping contacts - Semiconductor memory devices having strapping contacts with an increased pitch are provided. The semiconductor memory devices include cell regions and strapping regions between adjacent cell regions in a first direction on a semiconductor substrate. Active patterns extend in the first direction throughout the cell regions and strapping regions and are spaced apart from one another in a second direction intersecting the first direction. First interconnection lines extend in the first direction throughout the cell regions and the strapping regions and are spaced apart from one another in the second direction while overlapping with the active patterns. Second interconnection lines extend in the second direction to intersect the active patterns and the first interconnection lines in the cell regions. The second interconnection lines are spaced apart from one another in the first direction. Memory cells are positioned at intersection portions of the first and second interconnection lines in the cell regions. Strapping contacts are in the strapping regions and configured such that the active patterns contact with the first interconnection lines through the strapping contacts. | 10-02-2008 |
20130187119 | Semiconductor Memory Devices Having Strapping Contacts - Semiconductor memory devices having strapping contacts are provided, the devices include cell regions and strapping regions between adjacent cell regions in a first direction. Active patterns, extending in the first direction throughout the cell regions and strapping regions, are spaced apart from one another in a second direction intersecting the first direction. First interconnection lines, extending in the first direction throughout the cell regions and strapping regions, are spaced apart from one another in the second direction while overlapping with the active patterns. Second interconnection lines, extending in the second direction, intersect the active patterns and first interconnection lines in the cell regions. The second interconnection lines are spaced apart from one another in the first direction. Memory cells are positioned at intersection portions of the first and second interconnection lines in the cell regions. The active patterns contact the first interconnection lines through strapping contacts in the strapping regions. | 07-25-2013 |
Yong-Tae Yoon, Seoul KR
Patent application number | Description | Published |
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20130261825 | METHOD AND APPARATUS FOR CONTROLLING POWER SUPPLY - A demand response apparatus receives from a supply resource utilizing apparatus a signal indicating whether power supply from the demand response apparatus to the supply resource utilizing apparatus is possible, estimates a first power usage of the demand response apparatus for a first time interval, changes an operation of the demand response apparatus, estimates a second power usage for a second time interval after the changing of the operation of the demand response apparatus, calculates supply power available to the supply resource utilizing apparatus based on the estimated first power usage and the estimated second power usage, and transmits information about the available supply power to the supply resource utilizing apparatus. | 10-03-2013 |
20130261830 | APPARATUS AND METHOD FOR COLLECTING POWER FROM DISTRIBUTED POWER SUPPLY RESOURCES - An apparatus and method for collecting power from distributed power supply resources are provided. The method includes transmitting a signal for inquiring whether supply of demand-side power supply resources is possible to a providing side that provides demand-side power supply resources, selecting demand-side power supply resources to be utilized, based on power supply resource-related information for each of available demand-side power supply resources, which is received from the providing side, and notifying the selection results to the selected demand-side power supply resources. | 10-03-2013 |
20130261831 | ELECTRICITY STORAGE APPARATUS FOR CONTROLLING POWER CONSUMPTION AND METHOD THEREFOR - A method for controlling power consumption by an electricity storage apparatus is provided. The method includes receiving, from a utilizing side, an inquiry request signal for inquiring whether power supply from the electricity storage apparatus is possible, inquiring an amount of charged power from the electricity storage apparatus compared to a capacity of the electricity storage apparatus, comparing a required amount of power, which is included in the inquiry request signal, with the amount of charged power, and based on the comparison result, determining an amount of power to supply to the utilizing side and whether to switch to an operation mode of supplying the amount of power to the utilizing side, and upon determining to switch to the operation mode, checking an amount of available supply power in accordance with the operation mode, and transmitting information about the checked amount of available supply power to the utilizing side. | 10-03-2013 |