| Patent application number | Description | Published |
|---|
| 20080203565 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device | 08-28-2008 |
| 20080237883 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - First semiconductor element | 10-02-2008 |
| 20080265434 | SEMICONDUCTOR DEVICE HAVING A SEALING RESIN AND METHOD OF MANUFACTURING THE SAME - The semiconductor device | 10-30-2008 |
| 20080296765 | Semiconductor element and method of manufacturing the same - A semiconductor element ( | 12-04-2008 |
| 20090001604 | Semiconductor Package and Method for Producing Same - An oxide layer and a metal layer composed of a gold- or platinum-group metal are formed in the stated order on a substrate. A wiring body having a wiring layer, insulating layer, via, and electrode is formed on the metal layer. A semiconductor element is then connected as a flip chip via solder balls on the wiring body electrode, and underfill is introduced between the semiconductor element and the wiring body. Subsequently, a sealing resin layer is formed so as to cover the semiconductor element and the surface of the wiring body on which the semiconductor element is mounted, thus producing a semiconductor package. A high-density, detailed, thin semiconductor package can thereby be realized. | 01-01-2009 |
| 20090137082 | Manufacturing method for electronic devices - A manufacturing method for manufacturing an electronic device includes a first electronic component and a second electronic component; and a bond part for the first electronic component joined to another bond part for the second electronic component. In a first process of this manufacturing method, the metallic bond part for the first electronic component is placed directly against the metallic bond part for the second electronic component, pressure is applied to the first electronic component and the second electronic component and, after metallically joining the above two bond parts, the pressure applied to the first electronic component and the second electronic component is released. In a second process in the manufacturing method, a clamping member affixes the relative positions of the joined first electronic component and second electronic component, and heats the first electronic component and the second electronic component to maintain a specified temperature. | 05-28-2009 |
| 20090273092 | SEMICONDUCTOR MODULE HAVING AN INTERCONNECTION STRUCTURE - In a method for manufacturing a semiconductor module, a metal layer is formed on a support substrate. Then, first conductive posts and a first insulating layer are formed on the metal layer. The first insulating layer surrounds the sides of the first conductive posts. Then, second conductive posts are formed above the first conductive posts. The second conductive posts are electrically connected to the first conductive posts. Then, a second insulating layer is formed so as to cover the second conductive posts. The second insulating layer is made of adhesive resin. Finally, a semiconductor device is adhered to the second conductive posts by the second insulating layer while a gap between the first semiconductor device and the first insulating layer is sealed by the second insulating layer. | 11-05-2009 |
| 20090310921 | Optical transmission apparatus to which optical cable is connected - An optical transmission apparatus includes a wiring board, an electronic device mounted on the wiring board, a connection part that mechanically connects the electronic device and the wiring board to each other in such a manner that the electronic device and the wiring board face each other at a certain distance and electrically connects the electronic device and the wiring board to each other, an optical cable connector that is in contact with the electronic device, and an optical cable connected to the optical cable connector. The optical cable connector has a part that is inserted between the electronic device and the wiring board. A signal is transmitted between the part and the electronic device. | 12-17-2009 |
| 20100087058 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film. | 04-08-2010 |
| 20100127405 | WIRING BOAD, SEMICONDUCTOR DEVICE IN WHICH WIRING BOARD IS USED, AND METHOD FOR MANUFATURING THE SAME - A wiring board comprising a first surface on which a first electrode is disposed and a second surface on which a second electrode is disposed; at least a single insulation layer and at least a single wiring layer; and one or a plurality of mounted semiconductor elements, wherein the second electrode disposed on the second surface is embedded in the insulation layer, the surface on the opposite side of the exposed surface on the second surface side of the second electrode is connected to the wiring layer, and all or part of the side surface of the second electrode does not make contact with the insulation layer. | 05-27-2010 |
| 20100144091 | Semiconductor device and method of manufacturing the same - A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate. | 06-10-2010 |
| 20100291732 | Manufacturing method for electronic devices - A manufacturing method for an electronic device joining a first metallic bond part formed on a first electronic component and a second metallic bond part formed on a second electronic component includes a first process for placing the first metallic bond part directly against the second metallic bond part, applying pressure to the first electronic component and the second electronic component, joining the first metallic bond part to the second metallic bond part with solid-phase diffusion, and releasing the applied pressure, and a second process for heating the first electronic component and the second electronic component at a predetermined temperature such that the first metallic bond part and the second metallic bond part are joined together by melting the first metallic bond part and the second metallic bond part. | 11-18-2010 |
| 20100295191 | WIRING BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING WIRING BOARD AND SEMICONDUCTOR DEVICE - In the wiring board, insulating layers and wiring layers are alternately laminated, and the wiring layers are electrically connected by the vias. The wiring board includes first terminals arranged in a first surface and embedded in an insulating layer, second terminals arranged in a second surface opposite to the first surface and embedded in an insulating layer, and lands arranged in an insulating layer and in contact with the first terminals. The vias electrically connect the lands and the wiring layers laminated alternately with the insulating layers. No connecting interface is formed at an end of each of the vias on the land side but a connecting interface is formed at an end of each of the vias on the wiring layer side. | 11-25-2010 |
| 20100297811 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing according to an embodiment of the present invention includes forming a seed metal layer | 11-25-2010 |
| 20100314749 | SEMICONDUCTOR DEVICE HAVING A SEALING RESIN AND METHOD OF MANUFACTURING THE SAME - The semiconductor device | 12-16-2010 |
| 20100327427 | Semiconductor device and method for manufacturing the same - A semiconductor device includes a wiring layer, a semiconductor chip which is arranged on the wiring layer with a gap there between, the semiconductor chip being electrically connected to the wiring layer through a connecting portion, a first sealing member which is filled in a space between the wiring layer and the semiconductor chip, and a second sealing member which coats the semiconductor chip. The first sealing member and the second sealing member include same organic resin, the organic resin including inorganic filler. The second sealing member has larger content of inorganic filler than the first sealing member. | 12-30-2010 |
| 20110075389 | WIRING BOARD, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprising a flat wiring board, a first LSI disposed on one surface of the wiring board, a sealing resin for covering the one surface and a side face of the first semiconductor element, and a second LSI disposed on another surface of the wiring board. The wiring board has conductive wiring as a wiring layer, an insulation resin as a support layer for the wiring layer, and a conductive through-hole that passes through the wiring layer and the support layer. Connection points between lands disposed in positions in which the external peripheral edges of the semiconductor elements transverse the interior of the lands as viewed vertically from above, which lands are selected from land portions on which the external connection terminals are formed, and the wiring board formed in the same plane as the lands, are unevenly distributed toward one side of the wiring board. Connections for very small wiring are thereby made possible, and a plurality of semiconductor elements can be very densely connected. | 03-31-2011 |
| 20110089561 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor package has: a first chip; and a second chip. The first chip has: an insulating resin layer formed on a principal surface of the first chip; a bump-shaped first internal electrode group that is so formed in a region of the insulating resin layer as to penetrate through the insulating resin layer and is electrically connected to the second chip; an external electrode group used for electrical connection to an external device; and an electrostatic discharge protection element group electrically connected to the external electrode group. The first internal electrode group is not electrically connected to the electrostatic discharge protection element group. | 04-21-2011 |
| 20110089573 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first interposer provided with a first chip first interconnection; a first chip arranged to contact the first interposer in one surface of the first chip; a second interposer arranged to contact the other surface of the first chip and provided with a first chip second interconnection; and a second chip group mounted on the second interposer. The first chip has a circuit forming surface on which a circuit element is formed, as one of the surfaces of the first chip, and the first chip first interconnection and the first chip second interconnection are electrically connected with the circuit element. A through electrode is formed to pass from the one of the surfaces of the first chip to the other surface, and one of the first chip first interconnection and the first chip second interconnection is electrically connected with the circuit element through the through electrode. | 04-21-2011 |
| 20110104887 | Semiconductor element and method of manufacturing the same - A method of manufacturing a semiconductor element including a semiconductor substrate, a conductive post portion provided on the semiconductor substrate to protrude therefrom, and a solder layer provided on the conductive post portion, includes forming on the semiconductor substrate the conductive post portion having a distal end surface curved in a substantially arc shape by electrolytic plating, forming an intermediate solder layer on the distal end surface of the conductive post portion, and reflowing the intermediate solder layer to form the solder layer which has a thickest portion at a top of the distal end surface of the conductive post portion. | 05-05-2011 |
