Patent application number | Description | Published |
20090011680 | Polishing state monitoring apparatus and polishing apparatus and method - A polishing state monitoring apparatus measures characteristic values of a surface, being polished, of a workpiece to determine the timing of a polishing end point. The polishing state monitoring apparatus includes a light-emitting unit for applying light from a light source to a surface of a workpiece being polished, a light-receiving unit for receiving reflected light from the surface of the workpiece, a spectroscope unit for dividing the reflected light received by the light-receiving unit into a plurality of light rays having respective wavelengths, and light-receiving elements for accumulating the detected light rays as electrical information. The polishing state monitoring apparatus further includes a spectral data generator for reading the electrical information accumulated by the light-receiving elements and generating spectral data of the reflected light, and a processor for calculating a predetermined characteristic value on the surface of the workpiece based on the spectral data generated by the spectral data generator. | 01-08-2009 |
20090096446 | Polishing monitoring method, polishing apparatus and monitoring apparatus - The present invention provides a method for monitoring a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor comprises two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor. The method includes acquiring the output signal of the eddy current sensor when the eddy current sensor is facing the conductive film, defining the two signals as coordinates on a coordinate system, repeating the acquiring of the output signal and the defining of the coordinates, determining a center of curvature of an arc specified by at least three sets of coordinates on the coordinate system, determining an angle of inclination of a line connecting the center of curvature and a latest one of the at least three sets of coordinates, and monitoring a change in thickness of the conductive film by monitoring a change in the angle of inclination. | 04-16-2009 |
20090104847 | Polishing monitoring method and polishing apparatus - The present invention provides a method of monitoring a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value. | 04-23-2009 |
20090130956 | Polishing apparatus and polishing method - A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface. | 05-21-2009 |
20090255343 | PHYSICAL QUANTITY SENSOR AND METHOD FOR MANUFACTURING THE SAME - A physical quantity sensor includes two substrates and a movable electrode that is disposed between the two substrates and is bonded to the two substrates. In the physical quantity sensor, the movable electrode has an elastically deformable diaphragm and one of the two substrates is an electrode substrate having a detection electrode on a detection surface opposite to the diaphragm to detect capacitance between the diaphragm and the detection electrode. In the physical quantity sensor, in a range between a room temperature and a bonding temperature when the two substrates and the movable electrode are bonded, coefficients of thermal expansion of the two substrates are smaller than that of the movable electrode and in a temperature range where the physical quantity sensor is used, a coefficient of thermal expansion of the movable electrode is between a first and second substrates. | 10-15-2009 |
20090286332 | POLISHING METHOD - A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film, during the second polishing process and the third polishing process, monitoring a polishing state of the substrate with an eddy current sensor, and terminating the third polishing process when an output signal of the eddy current sensor reaches a predetermined threshold. | 11-19-2009 |
20100015889 | Processing end point detection method, polishing method,and polishing apparatus - The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece. | 01-21-2010 |
20100029177 | Polishing apparatus and polishing method - The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a semiconductor wafer, to planarize the substrate. The polishing apparatus according to the present invention includes a polishing table ( | 02-04-2010 |
20100075576 | POLISHING STATE MONITORING APPARATUS AND POLISHING APPARATUS AND METHOD - A polishing state monitoring apparatus measures characteristic values of a surface, being polished, of a workpiece to determine the timing of a polishing end point. The polishing state monitoring apparatus includes a light-emitting unit for applying light from a light source to a surface of a workpiece being polished, a light-receiving unit for receiving reflected light from the surface of the workpiece, a spectroscope unit for dividing the reflected light received by the light-receiving unit into a plurality of light rays having respective wavelengths, and light-receiving elements for accumulating the detected light rays as electrical information. The polishing state monitoring apparatus further includes a spectral data generator for reading the electrical information accumulated by the light-receiving elements and generating spectral data of the reflected light, and a processor for calculating a predetermined characteristic value on the surface of the workpiece based on the spectral data generated by the spectral data generator. | 03-25-2010 |
20100093260 | Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method and apparatus for selecting wavelength of light for polishing endpoint detection, polishing endpoint detection method, polishing endpoint detection apparatus, and polishing monitoring method - A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time. | 04-15-2010 |
20100273396 | POLISHING METHOD, POLISHING APPARATUS AND METHOD OF MONITORING A SUBSTRATE - A method of polishing a substrate is described. The method includes rotating a polishing table having a polishing surface, holding a substrate by a top ring, bringing the substrate into contact with the polishing surface while swinging and rotating the top ring to polish the substrate, and monitoring a surface condition of the substrate by a monitoring sensor. A rotational speed of the polishing table and conditions of swing motion of the top ring are determined such that a position of the monitoring sensor, a position of a center of rotation of the top ring, and a direction of the swing motion of the top ring at a point of time when a predetermined period of time has elapsed after polishing of the substrate is started approximately coincide with their previous values at a point of time before the predetermined period of time has elapsed. | 10-28-2010 |
20100330878 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus has a polishing table having a polishing surface and a top ring for pressing a substrate against the polishing surface while independently controlling pressing forces applied to a plurality of areas on the substrate. The polishing apparatus has a sensor for monitoring substrate conditions of a plurality of measurement points on the substrate, a monitor unit for performing a predetermined arithmetic process on a signal from the sensor to generate a monitor signal, and a controller for comparing the monitor signal of the measurement points with the reference signal and controlling the pressing forces of the top ring so that the monitor signal of the measurement point converges on the reference signal. | 12-30-2010 |
20110172800 | SCHEDULER, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF TRANSFERRING SUBSTRATES IN SUBSTRATE PROCESSING APPARATUS - A scheduler generates not only normal substrate transferring schedules for substrates newly supplied to a substrate processing apparatus, but also substrate transferring schedules for keeping a high production quantity in the event of a failure. The scheduler is used in a substrate processing apparatus including a plurality of substrate processing sections for processing substrates, a transfer device for transferring the substrates, and a controller for controlling the substrate processing units to process the substrates and controlling the transfer device to transfer the substrates. The scheduler is incorporated in the controller for calculating a substrate transferring schedule and has a function to successively calculate substrate transferring schedules for substrates which are newly supplied to the substrate processing apparatus, and, in the event of a fault occurring in the substrate processing apparatus, to recalculate the substrate transferring schedules with an initial state represented by a state including the fault. | 07-14-2011 |
20110216328 | POLISHING MONITORING METHOD, POLISHING METHOD, AND POLISHING MONITORING APPARATUS - A method capable of accurately monitoring progress of polishing and capable of detecting an accurate polishing end point is provided. The method includes: directing light to the substrate during polishing of the substrate; receiving reflected light from the substrate; measuring intensity of the reflected light at each wavelength; producing spectrum indicating relationship between intensity and wavelength from measured values of the intensity; calculating an amount of change in the spectrum per predetermined time; integrating the amount of change in the spectrum with respect to polishing time to obtain an amount of cumulative change in the spectrum; and monitoring the progress of polishing of the substrate based on the amount of cumulative change in the spectrum. | 09-08-2011 |
20120164917 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate. | 06-28-2012 |
20130149938 | METHOD OF MAKING DIAGRAM FOR USE IN SELECTION OF WAVELENGTH OF LIGHT FOR POLISHING ENDPOINT DETECTION, METHOD AND APPARATUS FOR SELECTING WAVELENGTH OF LIGHT FOR POLISHING ENDPOINT DETECTION, POLISHING ENDPOINT DETECTION METHOD, POLISHING ENDPOINT DETECTION APPARATUS, AND POLISHING MONITORING METHOD - A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time. | 06-13-2013 |
20130273814 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus polishes a substrate having a film formed thereon. A sensor is disposed in a polishing table that supports a polishing pad thereon. The polishing apparatus is configured to perform an idling process in which polishing of the substrate on the polishing pad does not progress substantially, while rotating the polishing table and the substrate. The sensor obtains the film thickness data, which varies in accordance with a thickness of the film, while the idling process is performed. A processor calculates, from the film thickness data, a polishing index value indicating the progress of polishing of the film. | 10-17-2013 |
20130337586 | POLISHING METHOD - A method of polishing a substrate includes: performing a first polishing process of bringing the substrate into sliding contact with a polishing pad on a first polishing table to polish a metal film; performing a second polishing process of bringing the substrate into sliding contact with a polishing pad on a second polishing table to polish the metal film until a conductive film is exposed; performing a third polishing process of bringing the substrate into sliding contact with a polishing pad on a third polishing table to polish at least the conductive film; and performing a fourth polishing process of bringing the substrate into sliding contact with a polishing pad on a fourth polishing table to polish at least a dielectric film. | 12-19-2013 |
20130344773 | POLISHING APPARATUS AND POLISHING METHOD - The present invention provides an apparatus and a method for polishing a substrate having a film formed thereon. The method includes: rotating a polishing table supporting a polishing pad by a table motor; pressing the substrate against the polishing pad by a top ring; obtaining a signal containing a thickness information of the film; producing from the signal a polishing index value that varies in accordance with a thickness of the film; monitoring a torque current value of the table motor and the polishing index value; and determining a polishing end point based on a point of time when the torque current value has reached a predetermined threshold value or a point of time when a predetermined distinctive point of the polishing index value has appeared, whichever comes first. | 12-26-2013 |
20140004773 | PROCESSING END POINT DETECTION METHOD, POLISHING METHOD, AND POLISHING APPARATUS | 01-02-2014 |
20140017824 | POLISHING METHOD - A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate. | 01-16-2014 |
20140036266 | POLISHING MONITORING METHOD, POLISHING METHOD, AND POLISHING MONITORING APPARATUS - A method accurately monitors the progress of polishing and accurately detects the polishing end point. The method includes directing light to the substrate during polishing of the substrate, receiving reflected light from the substrate, measuring an intensity of the reflected light at each wavelength, and producing a spectrum indicating a relationship between intensity and wavelength from measured values of the intensity. The method also includes calculating an amount of change in the spectrum per predetermined time, integrating the amount of change in the spectrum with respect to polishing time to obtain an amount of cumulative change in the spectrum, and monitoring the progress of polishing of the substrate based on the amount of cumulative change in the spectrum. | 02-06-2014 |
20150017880 | FILM-THICKNESS MEASURING APPARATUS, FILM-THICKNESS MEASURING METHOD, AND POLISHING APPARATUS HAVING THE FILM-THICKNESS MEASURING APPARATUS - A film-thickness measuring apparatus and a film-thickness measuring method capable of improving an accuracy of the film-thickness measurement are disclosed. The film-thickness measuring apparatus includes a substrate stage configured to support a substrate horizontally, a rinsing water supply structure configured to supply rinsing water onto an entire surface of the substrate on the substrate stage, a film-thickness measuring head configured to transmit light to a measurement area of the surface of the substrate on the substrate stage, produce a spectrum of reflected light from the measurement area, and determine a film thickness of the substrate from the spectrum, and a fluid supply structure configured to form a flow of a gas on a path of the light and supply the flow of the gas onto the measurement area. | 01-15-2015 |
20150017887 | POLISHING APPARATUS AND POLISHED-STATE MONITORING METHOD - A polishing apparatus capable of achieving a highly-precise polishing result is disclosed. The polishing apparatus includes an in-line film-thickness measuring device configured to measure a film thickness of the substrate in a stationary state, and an in-situ spectral film-thickness monitor having a film thickness sensor disposed in a polishing table, the in-situ spectral film-thickness monitor being configured to subtract an initial film thickness, measured by the in-situ spectral film-thickness monitor before polishing of the substrate, from an initial film thickness, measured by the in-line film-thickness measuring device before polishing of the substrate, to determine a correction value, add the correction value to a film thickness that is measured when the substrate is being polished to obtain a monitoring film thickness, and monitor a progress of polishing of the substrate based on the monitoring film thickness. | 01-15-2015 |