Patent application number | Description | Published |
20090121214 | III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface has a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses. | 05-14-2009 |
20090166650 | LIGHT-EMITTING DEVICE OF GROUP III NITRIDE-BASED SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF - A light-emitting device of Group III nitride-based semiconductor comprises a substrate, a first Group III nitride layer and a second Group III nitride layer. The substrate comprises a first surface and a plurality of convex portions protruding from the first surface. Each convex portion is surrounded by a part of the first surface. The first Group III nitride layer is jointly formed by lateral growth starting at top surfaces of the convex portions. The second Group III nitride layer is formed on the first surface, wherein a thickness of the second Group III nitride layer is less than a height of the convex portion. Moreover, the first Group III nitride layer and the second Group III nitride layer are made of a same material. | 07-02-2009 |
20090315067 | SEMICONDUCTOR DEVICE FABRICATION METHOD AND STRUCTURE THEREOF - A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps. | 12-24-2009 |
20090321780 | GALLIUM NITRIDE-BASED LIGHT EMITTING DEVICE WITH ROUGHENED SURFACE AND FABRICATING METHOD THEREOF - A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer. | 12-31-2009 |
20100019256 | LIGHT EMITTING DEVICE WITH ELECTRON BLOCKING COMBINATION LAYER - A light emitting device with an electron blocking combination layer comprises an active layer, an n-type GaN layer, a p-type GaN layer, and an electron blocking combination layer which has two Group III-V semiconductor layers with different band gaps that can be deposited periodically and repeatedly on the active layer to block overflowing electrons from the active layers. | 01-28-2010 |
20100032649 | LIGHT EMITTING DEVICE AND REDUCED POLARIZATION INTERLAYER THEREOF - A light emitting device (LED), in which a reduced polarization interlayer is formed between an electron blocking layer (EBL) and an active layer of the LED, is disclosed. The reduced polarization interlayer is made of Al | 02-11-2010 |
20100090232 | POLYCHROMATIC LED AND METHOD FOR MANUFACTURING THE SAME - A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates. | 04-15-2010 |
20100099213 | METHOD FOR BLOCKING DISLOCATION PROPAGATION OF SEMICONDUCTOR - The present invention provides a method for blocking the dislocation propagation of a semiconductor. A semiconductor layer is formed by epitaxial process on a substrate. A plurality of recesses is formed on the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. Thereafter, a blocking layer is formed on each of the plurality of recesses. The aforesaid semiconductor layer undergoes epitaxial process again on the aforesaid semiconductor layer, and laterally overgrows to redirect the dislocation defects. | 04-22-2010 |
20100170936 | METHOD FOR BONDING TWO MATERIALS - A method for bonding two materials uses radio frequency energy to swiftly induce heat in a high permeability material for heating a medium to the bonding temperature of the medium so as to bond the two materials with each other. | 07-08-2010 |
20100224858 | LATERAL THERMAL DISSIPATION LED AND FABRICATION METHOD THEREOF - A lateral thermal dissipation LED and a fabrication method thereof are provided. The lateral thermal dissipation LED utilizes a patterned metal layer and a lateral heat spreading layer to transfer heat out of the LED. The thermal dissipation efficiency of the LED is increased, and the lighting emitting efficiency is accordingly improved. | 09-09-2010 |
20100224897 | SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor optoelectronic device with enhanced light extraction efficiency includes at least one protrusion structure, which can be formed around a light-emitting region of the device. The at least one protrusion structure can include a plurality of protrusion structures in one embodiment. In addition, a fabricating method for forming a semiconductor optoelectronic device with enhanced light extraction efficiency is provided in the present invention. | 09-09-2010 |
20100224900 | SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME - A semiconductor optoelectronic device with enhanced light extraction efficiency includes a major luminescent area and a secondary luminescent area, wherein the major luminescent area is surrounded by a secondary luminescent area. The secondary luminescent area not only can improve the light extraction efficiency of the major luminescent area, but per se also can luminesce. In addition, one embodiment of the present invention provides a fabricating method for forming the secondary luminescent area. | 09-09-2010 |
20100230711 | FLIP-CHIP SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating flip-chip semiconductor optoelectronic devices initially flip-chip bonds a semiconductor optoelectronic chip attached to an epitaxial substrate to a packaging substrate. The epitaxial substrate is then separated using lift-off technology. | 09-16-2010 |
20120080715 | SEMICONDUCTOR DEVICE - A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer. | 04-05-2012 |