Patent application number | Description | Published |
20120077344 | METHOD OF PATTERNING A LOW-K DIELECTRIC FILM - Methods of patterning low-k dielectric films are described. | 03-29-2012 |
20130023122 | METHOD OF MULTIPLE PATTERNING OF A LOW-K DIELECTRIC FILM - Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. A second mask layer is formed and patterned above the first mask layer. A pattern of the second mask layer is transferred at least partially into the low-k dielectric layer by modifying first exposed portions of the low-k dielectric layer with a first plasma process and removing the modified portions of the low-k dielectric layer. Subsequently, a pattern of the first mask layer is transferred at least partially into the low-k dielectric layer by modifying second exposed portions of the low-k dielectric layer with a second plasma process and removing the modified portions of the low-k dielectric layer. | 01-24-2013 |
20130023123 | METHOD OF REMOVING A PHOTORESIST FROM A LOW-K DIELECTRIC FILM - Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer. | 01-24-2013 |
20130023124 | METHOD OF PATTERNING A LOW-K DIELECTRIC FILM - Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer. | 01-24-2013 |
20130040464 | METHOD OF PATTERNING A LOW-K DIELECTRIC FILM - Methods of patterning low-k dielectric films are described. | 02-14-2013 |
20130109187 | POST ETCH TREATMENT (PET) OF A LOW-K DIELECTRIC FILM | 05-02-2013 |
20140038419 | METHOD FOR PROVIDING VIAS - A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H | 02-06-2014 |
20140051256 | ETCH WITH MIXED MODE PULSING - A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer. | 02-20-2014 |
20140179106 | IN-SITU METAL RESIDUE CLEAN - A method for forming devices in an oxide layer over a substrate, wherein a metal containing layer forms at least either an etch stop layer below the oxide layer or a patterned mask above the oxide layer, wherein a patterned organic mask is above the oxide layer is provided. The substrate is placed in a plasma processing chamber. The oxide layer is etched through the patterned organic mask, wherein metal residue from the metal containing layer forms metal residue on sidewalls of the oxide layer. The patterned organic mask is stripped. The metal residue is cleaned by the steps comprising providing a cleaning gas comprising BCl | 06-26-2014 |