Patent application number | Description | Published |
20120064679 | METAL GATE TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided. Next, a stacked film is formed on the substrate, in which the stacked film includes at least one high-k dielectric layer and a first metal layer. The stacked film is patterned to form a plurality of gates in the first transistor region and the second transistor region, a dielectric layer is formed on the gates, and a portion of the dielectric layer is planarized until reaching the top of each gates. The first metal layer is removed from the gate of the second transistor region, and a second metal layer is formed over the surface of the dielectric layer and each gate for forming a plurality of metal gates in the first transistor region and the second transistor region. | 03-15-2012 |
20120244669 | Method of Manufacturing Semiconductor Device Having Metal Gates - The present invention provides a method of manufacturing semiconductor device having metal gates. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench. Then, a first metal layer is formed in the first trench. The second sacrifice gate is removed to form a second trench. Next, a second metal layer is formed in the first trench and the second trench. Lastly, a third metal layer is formed on the second metal layer wherein the third metal layer is filled into the first trench and the second trench. | 09-27-2012 |
20120256276 | Metal Gate and Fabricating Method Thereof - A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O | 10-11-2012 |
20120322218 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening. | 12-20-2012 |
20130280900 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE - A manufacturing method for a semiconductor device having a metal gate is provided. First and second gate trenches are respectively formed in first and second semiconductor devices. A work-function metal layer is formed in the first and second gate trenches. A shielding layer is formed on the substrate. A first removing step is performed, so that the remaining shielding layer is at bottom of the second gate trench and fills up the first gate trench. A second removing step is performed, so that the remaining shielding layer is at bottom of the first gate trench to expose the work-function metal layer at sidewall of the first gate trench and in the second gate trench. The work-function metal layer not covered by the remaining shielding layer is removed, so that the remaining work-function metal layer is only at bottom of the first gate trench. The remaining shielding layer is removed. | 10-24-2013 |
20140339652 | SEMICONDUCTOR DEVICE WITH OXYGEN-CONTAINING METAL GATES - A semiconductor device with oxygen-containing metal gates includes a substrate, a gate dielectric layer and a multi-layered stack structure. The multi-layered stack structure is disposed on the substrate. At least one layer of the multi-layered stack structure includes a work function metal layer. The concentration of oxygen in the side of one layer of the multi-layered stack structure closer to the gate dielectric layer is less than that in the side of one layer of the multi-layered stack structure opposite to the gate dielectric layer. | 11-20-2014 |
20150076623 | METAL GATE TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating metal gate transistor is disclosed. The method includes the steps of: providing a substrate having a NMOS region and a PMOS region; forming a dummy gate on each of the NMOS region and the PMOS region respectively; removing the dummy gates from each of the NMOS region and the PMOS region; forming a n-type work function layer on the NMOS region and the PMOS region; removing the n-type work function layer in the PMOS region; forming a p-type work function layer on the NMOS region and the PMOS region; and depositing a low resistance metal layer on the p-type work function layer of the NMOS region and the PMOS region. | 03-19-2015 |
20150243754 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME - A semiconductor structure and a manufacturing method thereof are disclosed. The semiconductor structure includes an isolation layer, a gate dielectric layer, a first work function metal, a first bottom barrier layer, a second work function metal, and a first top barrier layer. The isolation layer is formed on a substrate and has a first gate trench. The gate dielectric layer is formed in the first gate trench. The first work function metal is formed on the gate dielectric layer in the first gate trench. The first bottom barrier layer is formed on the first work function metal. The second work function metal is formed on the first bottom barrier layer. The first top barrier layer is formed on the second work function metal. | 08-27-2015 |