Patent application number | Description | Published |
20080224191 | Image pickup device with prevention of leakage current - An image pickup device includes an active pixel sensor (APS), a row driver, and a leakage current breaker. The active pixel sensor includes an array of a plurality of pixels. The row driver selects at least one pixel to be activated to output signals. The leakage current breaker decreases the leakage current through the unselected pixels by applying a leakage current breaker voltage at the bit lines of the APS array. | 09-18-2008 |
20090108312 | IMAGE SENSOR AND METHOD OF STABILIZING A BLACK LEVEL IN AN IMAGE SENSOR - An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image. | 04-30-2009 |
20090209058 | Method of fabricating image sensor - A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region. | 08-20-2009 |
20100006968 | Image sensors and methods of manufacturing the same - Provided are image sensors and a methods of manufacturing image sensors. The image sensors may include a substrate, a pixel array region, and a peripheral circuit region. The substrate includes a first region and a second region. The pixel array region may be formed on the first region. The peripheral circuit region may be formed on the second region. The first region may be located higher than the second region. According to the image sensor and the method of manufacturing the same, the vertical height of the pixel array region is decreased as compared to the prior art, and thus the aspect ratio at the pixel array region is minimized. As a result, condensing efficiency the image sensor may be improved. | 01-14-2010 |
20120068051 | Method Of Driving An Image Sensor - In a method of driving an image sensor, incident light is converted into electric charges in a photoelectric conversion region during a first operation mode. At least one of collected electric charges and overflowed electric charges is accumulated in a floating diffusion region based on illuminance of the incident light. The collected electric charges indicate electric charges that are collected in the photoelectric conversion region. The overflowed electric charges indicate electric charges that have overflowed from the photoelectric conversion region. | 03-22-2012 |
20120262622 | IMAGE SENSOR, IMAGE PROCESSING APPARATUS AND MANUFACTURING METHOD - An image sensor includes first pixels in an active region and second pixels in an optical black region of a pixel array. The first pixels have a gate that receives an active transfer control signal, and the second pixels have a gate that receives a passive transfer control signal, like a ground voltage. | 10-18-2012 |
20130012263 | IMAGE SENSOR AND IMAGE PROCESSING DEVICE INCLUDING THE SAME - An image sensor includes a pixel array and a calibration circuit. The pixel array includes a plurality of pixels each of which includes a photoelectric conversion device configured to absorb incident light and generate a photocharge, a transfer transistor configured to transfer the photocharge from the photoelectric conversion device to a floating diffusion node, and a reset transistor configured to reset the floating diffusion node. The calibration circuit is connected to the reset transistor of each pixel, and is configured to apply a different voltage to each pixel and adjust an amount of photocharge generated by the photoelectric conversion device in each pixel. | 01-10-2013 |
20140217474 | UNIT PIXEL OF IMAGE SENSOR AND IMAGE SENSOR INCLUDING THE SAME - A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The transfer gate transfers the electric charges to the floating diffusion region, which is located in the active region. The transfer gate includes first and second portions divided relative to a reference line, and at least one of the first or second portions does not overlap the isolation region | 08-07-2014 |
20140327051 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor and a method of manufacturing the image sensor are provided. The image sensor may include a photo detecting device and a charge storage device. The image sensor may further include a trench and a shield which blocks light from being absorbed by the charge storage device. The charge storage device may temporarily store accumulated charges by the photo detecting device. | 11-06-2014 |