Patent application number | Description | Published |
20110230042 | METHOD FOR IMPROVING THERMAL STABILITY OF METAL GATE - The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure on the substrate, the gate structure including a dummy gate, removing the dummy gate from the gate structure thereby forming a trench, forming a work function metal layer partially filling the trench, forming a fill metal layer filling a remainder of the trench, performing a chemical mechanical polishing (CMP) to remove portions of the metal layers outside the trench, and implanting Si, C, or Ge into a remaining portion of the fill metal layer. | 09-22-2011 |
20140042524 | Device with a Vertical Gate Structure - A device includes a wafer substrate, a conical frustum structure formed in the wafer substrate, and a gate all-around (GAA) structure circumscribing the middle portion of the conical frustum structure. The conical frustum structure includes a drain formed at a bottom portion of the conical frustum, a source formed at a top portion of the vertical conical frustum, and a channel formed at a middle portion of the conical frustum connecting the source and the drain. The GAA structure overlaps with the source at one side of the GAA structure, crosses over the channel, and overlaps with the drain at another side of the GAA structure. | 02-13-2014 |
20140246736 | High-K Film Apparatus and Method - Disclosed herein is a method forming a device comprising forming a high-k layer over a substrate and applying a dry plasma treatment to the high-k layer and removing at least a portion of one or more impurity types from the high-k layer. The dry plasma treatment may be chlorine, fluorine or oxygen plasma treatment. A cap layer may be applied on the high-k layer and a metal gate formed on the cap layer. An interfacial layer may optionally be formed on the substrate, with the high-k layer is formed on the interfacial layer. The high-k layer may have a dielectric constant greater than 3.9, and the cap layer may optionally be titanium nitride. The plasma treatment may be applied after the high-k layer is applied and before the cap layer is applied or after the cap layer is applied. | 09-04-2014 |
20140252455 | Structure And Method For Static Random Access Memory Device Of Vertical Tunneling Field Effect Transistor - The present disclosure provides one embodiment of a SRAM cell that includes first and second inverters cross-coupled for data storage, each inverter including at least one pull-up device and at least one pull-down devices; and at least two pass-gate devices configured with the two cross-coupled inverters. The pull-up devices, the pull-down devices and the pass-gate devices include a tunnel field effect transistor (TFET) that further includes a semiconductor mesa formed on a semiconductor substrate and having a bottom portion, a middle portion and a top portion; a drain of a first conductivity type formed in the bottom portion and extended into the semiconductor substrate; a source of a second conductivity type formed in the top portion, the second conductivity type being opposite to the first conductivity type; a channel in a middle portion and interposed between the source and drain; and a gate formed on sidewall of the semiconductor mesa and contacting the channel. | 09-11-2014 |
Patent application number | Description | Published |
20140252442 | Method and Structure for Vertical Tunneling Field Effect Transistor and Planar Devices - The present disclosure provides one embodiment of a method of forming a tunnel field effect transistor (TFET). The method includes forming a semiconductor mesa on a semiconductor substrate; performing a first implantation to the semiconductor substrate and the semiconductor mesa to form a drain of a first type conductivity; forming a first dielectric layer on the semiconductor substrate and sidewall of the semiconductor mesa; forming a gate stack on the sidewall of the semiconductor mesa and the first dielectric layer; forming a second dielectric layer on the first dielectric layer and the gate stack; and forming, on the semiconductor mesa, a source having a second type conductivity opposite to the first type conductivity. The gate stack includes a gate dielectric and a gate electrode on the gate dielectric. The source, drain and gate stack are configured to form the TFET. | 09-11-2014 |
20140264289 | Structure and Method for Vertical Tunneling Field Effect Transistor with Leveled Source and Drain - The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first semiconductor mesa formed on the semiconductor substrate within the first region; a second semiconductor mesa formed on the semiconductor substrate within the second region; and a field effect transistor (FET) formed on the semiconductor substrate. The FET includes a first doped feature of a first conductivity type formed in a top portion of the first semiconductor mesa; a second doped feature of a second conductivity type formed in a bottom portion of the first semiconductor mesa, the second semiconductor mesa, and a portion of the semiconductor substrate between the first and second semiconductor mesas; a channel in a middle portion of the first semiconductor mesa and interposed between the source and drain; and a gate formed on sidewall of the first semiconductor mesa. | 09-18-2014 |
20150155286 | Structure and Method For Statice Random Access Memory Device of Vertical Tunneling Field Effect Transistor - Forming an SRAM cell that includes first and second inverters cross-coupled for data storage, each inverter including at least one pull-up device and at least one pull-down devices; and at least two pass-gate devices configured with the two cross-coupled inverters, the pull-up devices, the pull-down devices and the pass-gate devices include a tunnel field effect transistor (TFET) that further includes a semiconductor mesa formed on a semiconductor substrate and having a bottom portion, a middle portion and a top portion; a drain of a first conductivity type formed in the bottom portion and extended into the semiconductor substrate; a source of a second conductivity type formed in the top portion, the second conductivity type being opposite to the first conductivity type; a channel in a middle portion and interposed between the source and drain; and a gate formed on sidewall of the semiconductor mesa and contacting the channel. | 06-04-2015 |
Patent application number | Description | Published |
20100265385 | Light Field Camera Image, File and Configuration Data, and Methods of Using, Storing and Communicating Same - Certain devices and methods are directed to acquiring, generating and/or outputting image data corresponding to a scene. In one aspect, the method comprises (i) acquiring light field data which is representative of a light field from the scene, (ii) acquiring configuration data which is representative of how light rays optically propagate through the data acquisition device (used to acquire the light field data), (iii) generating first image data using the light field data and the configuration data, wherein the first image data includes a focus or focus depth that is different from a focus or focus depth of the light field data, (iv) generating a first electronic data file including (a) the first image data, (b) the light field data, and (c) the configuration data, and (v) outputting the first electronic data file. In one aspect, the light field acquisition device comprises optics, a light field sensor (located in the optical path of the optics) to acquire light field image data, processing circuitry to: (i) determine configuration data which is representative of how light rays optically propagate through the optics and light field sensor, and (ii) generate and output the electronic data file, wherein the electronic data file includes (a) image data, (b) light field data which is representative of a light field from the scene, and (c) configuration data. The device also includes memory (internal and/or external) to store the electronic data file. | 10-21-2010 |
Patent application number | Description | Published |
20080266655 | Microscopy Arrangements and Approaches - Light-field microscopy is facilitated using an approach to image computation. In connection with an example embodiment, a subject (e.g., | 10-30-2008 |
20090128669 | CORRECTION OF OPTICAL ABERRATIONS - Digital images are computed using an approach for correcting lens aberration. According to an example embodiment of the present invention, a digital imaging arrangement implements microlenses to direct light to photosensors that detect the light and generate data corresponding to the detected light. The generated data is used to compute an output image, where each output image pixel value corresponds to a selective weighting and summation of a subset of the detected photosensor values. The weighting is a function of characteristics of the imaging arrangement. In some applications, the weighting reduces the contribution of data from photosensors that contribute higher amounts of optical aberration to the corresponding output image pixel. | 05-21-2009 |
20100026852 | VARIABLE IMAGING ARRANGEMENTS AND METHODS THEREFOR - Various approaches to imaging involve selecting directional and spatial resolution. According to an example embodiment, images are computed using an imaging arrangement to facilitate selective directional and spatial aspects of the detection and processing of light data. Light passed through a main lens is directed to photosensors via a plurality of microlenses. The separation between the microlenses and photosensors is set to facilitate directional and/or spatial resolution in recorded light data, and facilitating refocusing power and/or image resolution in images computed from the recorded light data. In one implementation, the separation is varied between zero and one focal length of the microlenses to respectively facilitate spatial and directional resolution (with increasing directional resolution, hence refocusing power, as the separation approaches one focal length). | 02-04-2010 |
20100128145 | System of and Method for Video Refocusing - Certain systems and methods are directed to acquiring, generating, manipulating and/or editing (for example, focusing or refocusing) refocusable video data, information, images and/or frames. The refocusable video data, information, images and/or frames may be light field video data, information, images and/or frames, that may be focused and/or re-focused after acquisition or recording of such video data, information, images and/or frames. In one aspect, a method of generating video data of a scene using a video acquisition device which acquires refocusable light field video data is disclosed, the method comprising (a) acquiring first refocusable light field video data of a scene, (b) storing first refocusable video data which is representative of the first refocusable light field video data, (c) acquiring second refocusable light field video data of the scene after acquiring the first refocusable light field video data, (d) determining a first virtual focus parameter (for example, a virtual focus depth) using the second refocusable light field video data, (e) generating first video data using the stored first refocusable video data and the first virtual focus parameter, wherein the first video data includes a focus depth that is different from an optical focus depth of the first refocusable light field video data, and (f) outputting the first video data to, for example, memory, a video display, processing circuitry, and/or a recording device. | 05-27-2010 |
20100129048 | System and Method for Acquiring, Editing, Generating and Outputting Video Data - Certain systems and methods are directed to acquiring, generating, manipulating and/or editing (for example, focusing or refocusing) refocusable video data/frames. The refocusable video frames may be light field video frames that may be focused and/or refocused after acquisition or recording of such video frames. In one aspect, a method of comprises: (a) selecting a first key frame, wherein the first key frame corresponds to one of a plurality of refocusable light field video frames, (b) selecting a second key frame, wherein the second key frame corresponds to one of the plurality of refocusable light field video frames which is temporally spaced apart from the first key frame such that a plurality of refocusable light field video frames are temporally disposed between the first and the second key frames, (c) determining a virtual focus parameters for the first key frame and the second key frame, and (d) generating first video data corresponding to the plurality of refocusable light field video frames which are temporally disposed between the first and the second key frames using (i) the virtual focus parameter for the first key frame, (ii) the virtual focus parameter for the second key frame and (iii) the refocusable light field video data corresponding to the plurality of refocusable light field video frames which are temporally disposed between the first and the second key frames, wherein the first video data includes a plurality of video frames, each video frame including a virtual focus depth which is based on the virtual focus parameter(s) for the first key frame and/or the second key frame. | 05-27-2010 |
20100141802 | Light Field Data Acquisition Devices, and Methods of Using and Manufacturing Same - Certain light field data acquisition devices and methods of using and manufacturing such devices. In one aspect, a light field imaging device for acquiring light field image data of a scene, the device comprises optics, wherein the optics includes an optical path and a focal point, wherein the focal point is associated with a focal length of the optics. A light field sensor to acquire light field image data in response to a first user input and located at a substantially fixed, predetermined location relative to the focal point of the optics, wherein the predetermined location is substantially independent of the scene. The optical depth of field of the optics with respect to the light field sensor extends to a depth that is closer than optical infinity. Processing circuitry, coupled the user interface, to: (a) determine a first virtual focus depth of the light field image data, wherein the first virtual focus depth is different from the optical focus depth of the light field image data, (b) automatically generate data which is representative of a first image of the scene using the light field image data, wherein the first image includes a focus which corresponds to the first virtual focus depth, (c) output the data which is representative of the first image, and, after outputting the data which is representative of the first image and in response to the second user input, (d) determine a second virtual focus depth of the light field image data using data which is representative of the second user input, wherein the second user input is indicative of the second virtual focus depth, and (e) generate data which is representative of a second image of the scene which includes a focus that corresponds to the second virtual focus depth. | 06-10-2010 |
20130107085 | Correction of Optical Aberrations | 05-02-2013 |
20130169855 | Imaging Arrangements and Methods Therefor - Image data is processed to facilitate focusing and/or optical correction. According to an example embodiment of the present invention, an imaging arrangement collects light data corresponding to light passing through a particular focal plane. The light data is collected using an approach that facilitates the determination of the direction from which various portions of the light incident upon a portion of the focal plane emanate from. Using this directional information in connection with value of the light as detected by photosensors, an image represented by the light is selectively focused and/or corrected. | 07-04-2013 |