Patent application number | Description | Published |
20100279507 | Method for chemical mechanical polishing a substrate - A method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: water, an abrasive; a diquaternary cation according to formula (I); and optionally a quaternary alkylammonium compound; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6; wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min. | 11-04-2010 |
20110111595 | Chemical mechanical polishing composition and methods relating thereto - A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises, as initial components: at least one of a first substance and a second substance; wherein the first substance is according to formula I | 05-12-2011 |
20110230048 | Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride - A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I | 09-22-2011 |
20110230049 | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride - A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an acyclic organosulfonic acid compound, wherein the acyclic organosulfonic acid compound has an acyclic hydrophobic portion having 6 to 30 carbon atoms and a nonionic acyclic hydrophilic portion having 10 to 300 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate. | 09-22-2011 |
20110230050 | METHOD OF POLISHING A SUBSTRATE COMPRISING POLYSILICON AND AT LEAST ONE OF SILICON OXIDE AND SILICON NITRIDE - A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate. | 09-22-2011 |
20110244685 | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal - A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I | 10-06-2011 |
20110306211 | Stabilized Chemical Mechanical Polishing Composition And Method Of Polishing A Substrate - A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamarityl substance according to formula (II); 0 to 1 wt % diquaternary substance according to formula (I); and, 0 to 1 wt % of a quaternary ammonium compound. Also, provided is a method for chemical mechanical polishing using the chemical mechanical polishing composition. | 12-15-2011 |
20120070989 | Stabilized, Concentratable Chemical Mechanical Polishing Composition And Method Of Polishing A Substrate - A chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; a diquaternary substance according to formula (I), wherein each X is independently selected from N and P; wherein R | 03-22-2012 |
20120070990 | Slurry Composition Having Tunable Dielectric Polishing Selectivity And Method Of Polishing A Substrate - A chemical mechanical polishing slurry composition, comprising, as initial components: water; an abrasive; a halogenated quaternary ammonium compound according to formula (I), wherein R | 03-22-2012 |
20120258598 | Stabilized Chemical Mechanical Polishing Composition and Method of Polishing a Substrate - A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): | 10-11-2012 |
20120276742 | Chemical Mechanical Polishing Composition and Method For Polishing Germanium-Antimony-Tellurium Alloys - A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition consisting essentially of, as initial components: water; an abrasive; a material selected from ethylene diamine tetra acetic acid and salts thereof; and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity. | 11-01-2012 |
20120276819 | Chemical Mechanical Polishing Composition and Method For Polishing Phase Change Alloys - A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition comprising, as initial components: water; an abrasive; at least one of a phthalic acid, a phthalic anhydride, a phthalate compound and a phthalic acid derivative; a chelating agent; a poly(acrylic acid-co-maleic acid); and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity. | 11-01-2012 |
20130045598 | Method for chemical mechanical polishing tungsten - A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition. | 02-21-2013 |
20130109181 | Method Of Polishing A Substrate | 05-02-2013 |
20130109182 | Method Of Polishing Using Tunable Polishing Formulation | 05-02-2013 |
20150079788 | LOW DEFECT CHEMICAL MECHANICAL POLISHING COMPOSITION - A low defect chemical mechanical polishing composition for polishing silicon oxide containing substrates is provided comprising, as initial components: water, a colloidal silica abrasive; and, an additive according to formula I. | 03-19-2015 |