Patent application number | Description | Published |
20090309783 | MILLIMETER WAVE RADAR TARGET SIMULATION SYSTEMS AND METHODS - A millimeter wave radar target simulation system and method. The system includes a down-converter that converts a millimeter wave radar signal to an intermediate frequency, an electrical-to-optical modulator that modulates an optical signal based on the down-converted signal, an optical-to-electrical demodulator that demodulates an optical signal to an electrical signal, an optical delay line serving to delay a signal passing from the electrical-to-optical modulator to the optical-to-electrical demodulator, and an up-converter that converts the electrical signal from the optical-to-electrical demodulator to a frequency that simulates a millimeter wave target return. The method includes receiving a millimeter wave radar signal, down-converting the radar signal to an intermediate frequency, modulating the down-converted signal to an optical signal, delaying the optical signal, demodulating the delayed optical signal, and up-converting the demodulated signal to a signal having a frequency that simulates a millimeter wave radar target return. | 12-17-2009 |
20090315638 | MILLIMETER WAVE LOW-LOSS HIGH-ISOLATION SWITCH - A switch for selectively providing an input signal to an output terminal. The switch includes a first waveguide terminal, a second waveguide terminal, a reduced-width waveguide connecting the first waveguide terminal to the second waveguide terminal, and at least one switching element spanning the reduced-width waveguide between the first and second waveguide terminals. The reduced-width waveguide is configured to pass a signal from the first waveguide terminal to the second waveguide terminal when the at least one switching element is in a first state and block a signal when the at least one switching element is in a second state. In some embodiments, the switch also includes at least one additional waveguide terminal and the reduced-width waveguide also connects the first waveguide terminal to the at least one additional waveguide terminal. | 12-24-2009 |
20100066620 | SCANNING ANTENNA - A reflector assembly implementable in a scanning antenna assembly having a stationary surface includes a support assembly coupled to the stationary surface, a substantially planar first reflector panel coupled to the support assembly so as to enable rotation of the first reflector panel about a central axis of the first reflector panel, and an actuator assembly comprising a translating arm coupled to the first reflector panel, wherein translational motion of the arm is operable to rotate the first reflector panel about the central axis back and forth through a predetermined angular range at a predetermined frequency. | 03-18-2010 |
20100301340 | Thin film transistors and arrays - Thin film transistors and arrays having controlled threshold voltage and improved I | 12-02-2010 |
20100301343 | Metal oxynitride thin film transistors and circuits - Thin film transistors and circuits having improved mobility and stability are disclosed in this invention to have metal oxynitrides as the active channel layers. In one embodiment, the charge carrier mobility in the thin film transistors is increased by using the metal oxynitrides as the active channel layers. In another embodiment, a thin film transistor having a p-type metal oxynitride active channel layer and a thin film transistor having an n-type metal oxynitride active channel layer are fabricated to forming a CMOS circuit. In yet another embodiment, thin film transistor circuits having metal oxynitrides as the active channel layers are provided. | 12-02-2010 |
20110180850 | Configuration and manufacturing method of low-resistance gate structures for semiconductor devices and circuits - The present invention provides methods for fabricating devices with low resistance structures involving a lift-off process. A radiation blocking layer is introduced between two resist layers in order to prevent intermixing of the photoresists. Cavities suitable for the formation of low resistance T-gates or L-gates can be obtained by a first exposure, developing, selective etching of blocking layer and a second exposure and developing. In another embodiment, a low resistance gate structure with pillars to enhance mechanical stability or strength is provided. | 07-28-2011 |
20110291159 | Stress release structures for metal electrodes of semiconductor devices - This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices. | 12-01-2011 |
20130065383 | Fabrication methods for T-gate and inverted L-gate structure for high frequency devices and circuits - In high frequency circuits, the switching speed of devices is often limited by the series resistance and capacitance across the input terminals. To reduce the resistance and capacitance, the cross-section of input electrodes is made into a T-shape or inverted L-shape through lithography. The prior art method for the formation of cavities for T-gate or inverted L-gate is achieved through several steps using multiple photomasks. Often, two or even three different photoresists with different sensitivity are required. In one embodiment of the present invention, an optical lithography method for the formation of T-gate or inverted L-gate structures using only one photomask is disclosed. In another embodiment, the structure for the T-gate or inverted L-gate is formed using the same type of photoresist material. | 03-14-2013 |
20140332854 | Stress release structures for metal electrodes of semiconductor devices - This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices. | 11-13-2014 |
20150069514 | Millimetre wave integrated circuits with thin film transistors - MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules. | 03-12-2015 |