Patent application number | Description | Published |
20080271992 | Apparatus and method for plating semiconductor wafers - An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided. | 11-06-2008 |
20080296166 | PROXIMITY PROCESSING USING CONTROLLED BATCH VOLUME WITH AN INTEGRATED PROXIMTIY HEAD - A plating assembly for use in plating metallic materials onto a surface of a substrate is provided. The plating assembly comprising a delivery unit having a fluid chamber, a metallic source, and a porous insert. The plating assembly also comprising a receiving unit having a fluid chamber and a metallic receiver. The receiving unit also has a porous insert. The porous insert of the delivery unit being substantially aligned with, and spaced apart from, the porous insert of the receiving unit. The metallic receiver being substantially aligned with the porous insert of the delivery unit and a path being defined between the delivery unit and the receiving unit. Wherein a plating meniscus is capable of being defined in the path between the porous inserts of the delivery unit and the receiving unit and a substrate is capable of being moved through the plating meniscus to enable the plating of metallic materials onto the surface of the substrate. Examples for de-plating are also provided. | 12-04-2008 |
20090087980 | METHODS OF LOW-K DIELECTRIC AND METAL PROCESS INTEGRATION - An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide. | 04-02-2009 |
20090321250 | Apparatus for Plating Semiconductor Wafers - An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided. | 12-31-2009 |
20110017605 | PROXIMITY PROCESSING USING CONTROLLED BATCH VOLUME WITH AN INTEGRATED PROXIMITY HEAD - Methods for plating substrates are herein defined. One method includes providing a plating assembly having a plating source in a plating fluid and a plating facilitator in the plating fluid, and defining a plating meniscus between the plating source and the plating facilitator. The plating meniscus being contained in a path of the plating assembly. The method further includes traversing a substrate through the path of the plating assembly. The substrate being charged so that plating ions are attracted to a surface of the substrate when the plating meniscus is present on the surface of the substrate, wherein the substrate traversing through the path of the plating assembly enables plating across the surface of the substrate. And, inducing a uniform charge in the path where the plating meniscus is formed, such that charge from the plating source is substantially uniformly directed toward the plating facilitator as the substrate that is charged moves through the path of the plating assembly. | 01-27-2011 |
20110155563 | APPARATUS AND METHOD FOR DEPOSITING AND PLANARIZING THIN FILMS OF SEMICONDUCTOR WAFERS - An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating. | 06-30-2011 |
20130149461 | ELECTROLESS COPPER DEPOSITION - A method for providing electroless plating is provided. An amorphous carbon barrier layer is formed over the low-k dielectric layer by providing a flow a deposition gas, comprising a hydrocarbon, H | 06-13-2013 |
20140145334 | METHODS AND APPARATUSES FOR THREE DIMENSIONAL INTEGRATED CIRCUITS - Methods and apparatuses for fabricating three-dimensional integrated circuits having through hole vias are provided. One aspect of the present invention is a method of gapfill for through hole vias for three-dimensional integrated circuits. The method comprises providing a semiconductor wafer having a plurality of holes for through hole vias and depositing a conformal metal layer to partially fill the holes to leave open voids. The method also includes purging the voids and cleaning the surface of the voids and using a dry deposition process to fill or close the voids. Another aspect of the present invention is an electronic device structure for a three-dimensional integrated circuit. | 05-29-2014 |
20140256142 | METHOD OF ETCHING AN ETCH LAYER - A method for etching an etch layer is provided. A glue layer having metallizable terminations is formed over the etch layer. The glue layer is exposed to a patterned light, wherein the metallizable terminations of the glue layer illuminated by the patterned light become unmetallizable. A metal deposition layer is formed on the glue layer, wherein the metal deposition layer only deposits on areas of the glue layer with metallizable terminations of the glue layer. The etch layer is etched through portions of the glue layer without the metal deposition layer. | 09-11-2014 |