Patent application number | Description | Published |
20100207270 | SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE, AND PORTABLE DEVICE - A semiconductor module is of a structure such that a wiring layer, an insulating resin layer and a semiconductor device are stacked in this order by bonding them together with compression. In the wiring layer, bump electrodes each having a base and a tip portion are provided in positions corresponding respectively to device electrodes of the semiconductor device. The bump electrodes penetrate the insulating resin layer and are electrically coupled to the corresponding device electrodes. | 08-19-2010 |
20110074025 | SEMICONDUCTOR MODULE, METHOD OF MANUFACTURING SEMICONDUCTOR MODULE, AND MOBILE DEVICE - An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps penetrating the insulating layer and connected to the electrode, and a rewiring pattern integrally formed with the bumps. The rewiring pattern includes a bump area and a wiring area extending contiguously with the bump area. The insulating layer is formed to have a concave upper surface in an interval between the bumps, and the wiring area of the rewiring pattern is formed to fit that upper surface. The wiring area of the rewiring pattern is formed to be depressed toward the semiconductor substrate in relation to the bump area of the rewiring pattern. | 03-31-2011 |
20110186993 | SEMICONDUCTOR MODULE AND PORTABLE APPARATUS PROVIDED WITH SEMICONDUCTOR MODULE - A semiconductor element mounted on an insulating resin layer formed on a wiring layer is sealed by a sealing resin. On the wiring layer, a protruding electrode protruding to the side of the semiconductor element and a protruding section are integrally formed with the wiring layer, respectively. The protruding electrode is electrically connected to an element electrode of the semiconductor element by penetrating the insulating resin layer. The protruding section is arranged to surround the semiconductor element along the four sides of the semiconductor element, and is embedded in the sealing resin up to a position above a section where the protruding electrode and the element electrode are bonded. | 08-04-2011 |
20140183562 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor layer | 07-03-2014 |
Patent application number | Description | Published |
20080203557 | SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME - Warp of a circuit device manufactured by the wafer level packaging technology is reduced. A semiconductor substrate used in a circuit device is provided with a circuit device and electrodes connected to the circuit device. A wiring layer having bumps connected to the electrodes is provided on a major surface of the semiconductor substrate. A metal layer is provided on a surface opposite to the major surface of the semiconductor substrate. | 08-28-2008 |
20080217769 | SEMICONDUCTOR MODULE, METHOD OF MANUFACTURING SEMICONDUCTOR MODULE, AND MOBILE DEVICE - An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps penetrating the insulating layer and connected to the electrode, and a rewiring pattern integrally formed with the bumps. The rewiring pattern includes a bump area and a wiring area extending contiguously with the bump area. | 09-11-2008 |
20080284012 | SEMICONDUCTOR MODULE MANUFACTURING METHOD, SEMICONDUCTOR MODULE, AND MOBILE DEVICE - A semiconductor substrate having on its surface an electrode of a semiconductor device and a pattern unit is prepared. A copper plate is formed provided with a first principle surface having a bump and a second principle surface, opposite to the first principle surface, having a trench. By adjusting the position of the copper plate so that a pattern unit and the corresponding trench have a predetermined positional relation, the bump and the electrode are aligned, the first principle surface of the copper plate and a semiconductor substrate are pressure-bonded via an insulating layer, and the bump and the electrode become connected electrically while the bump penetrating the insulating layer. A predetermined rewiring pattern is formed on the side of the second principle surface. | 11-20-2008 |
20090121350 | BOARD ADAPTED TO MOUNT AN ELECTRONIC DEVICE, SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREFORE, AND PORTABLE DEVICE - A board adapted to mount an electronic device includes an insulating resin layer, a wiring layer of a predetermined pattern provided on one surface of the insulating resin layer, a bump electrode provided on an insulating-resin-layer-side surface of the wiring layer, and a covering, formed of a metal layer, which covers a top surface of the bump electrode and a region, at a side surface of the bump electrode, continuous with the top surface excluding a region in contact with the wiring layer. | 05-14-2009 |
20090183906 | SUBSTRATE FOR MOUNTING DEVICE AND METHOD FOR PRODUCING THE SAME, SEMICONDUCTOR MODULE AND METHOD FOR PRODUCING THE SAME, AND PORTABLE APPARATUS PROVIDED WITH THE SAME - A substrate for mounting a device includes: an insulating resin layer made of an insulating resin; a wiring layer provided on one major surface of the insulating resin layer; and a projected portion that projects toward the direction opposite to the insulating resin layer from the wiring layer, and that is used for supporting a low-melting metal ball, while being connected to the wiring layer electrically. The wiring layer and the projected portion are formed into one body. | 07-23-2009 |
20090196011 | DEVICE MOUNTING BOARD AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR MODULE - A device mounting board includes: an insulating resin layer; a wiring layer disposed on one main surface of the insulating resin layer; and a bump electrode connected electrically to the wiring layer and protruding on a side of the insulating resin layer from the wiring layer. A side surface of the bump electrode is curved inwardly toward the center axis of the bump electrode as viewed in a cross section including the center axis of the bump electrode, and the radius of curvature of the side surface changes continuously from a wiring layer end to a head end of the bump electrode. | 08-06-2009 |
20090218686 | SEMICONDUCTOR, SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING THE SEMICONDUCTOR MODULE, AND MOBILE APPARATUS - A semiconductor module includes a device mounting board and a semiconductor device mounted on the device mounting board. The device mounting board includes an insulating resin layer, a wiring layer provided on one main surface of the insulating resin layer, and bump electrodes, electrically connected to the wiring layer, which are protruded from the wiring layer toward the insulating resin layer. The semiconductor device has device electrodes which are disposed counter to a semiconductor substrate and the bump electrodes, respectively. The surface of a metallic layer provided on the device electrode lies on the same plane as the surface of a protective layer. | 09-03-2009 |
Patent application number | Description | Published |
20130157102 | DEVICE MOUNTING BOARD, CELL, AND BATTERY MODULE - A device mounting board comprises: a heat dissipating substrate formed of a material containing at least one metal material selected from a group including Al, Mg, and Ti; an insulting resin layer laminated on the heat dissipating substrate; and a wiring layer laminated on the insulating resin layer, and on which a power module is to be mounted. The heat dissipating substrate comprises a random porous layer arranged such that it faces the insulating resin layer, and having cavities elongated in respective random directions. | 06-20-2013 |
20130181344 | SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING THE SEMICONDUCTOR MODULE, AND MOBILE APPARATUS - Bump electrodes and wiring layers are formed by selectively removing a copper sheet while the copper sheet is being held on a supporting base by an adhesion layer. Subsequently, a device mounting board is formed by laminating an insulating resin layer in such a manner that Au/Ni layers are exposed on the bump electrodes and the adhesion layer. The device mounting board and a semiconductor device held on the supporting base are temporarily press-bonded to each other and then the supporting base and the adhesion layer are removed. Then the device mounting board and the semiconductor device are finally and permanently press-bonded together. | 07-18-2013 |
20130216302 | METAL BONDING METHOD AND METAL BONDED STRUCTURE - The gap between first and second bonding portions is filled with a disperse solution obtained by dispersing copper micro-particles into a solution for copper oxide elution, so as to elute copper oxide configured as the outermost layer of the first bonding portion and copper oxide configured as the outermost layer of the second bonding portion, and copper oxide formed on the surface of each copper micro-particle. Pressure is applied to the first and second bonding portions using a press machine so as to raise the pressure of the disperse solution. At the same time, heat is applied under a relatively low temperature condition of 200° C. to 300° C., so as to remove the components contained in the disperse solution except for copper, thereby depositing copper. Thus, a first base portion and a second base portion are bonded via a copper bonded portion containing copper derived from the copper micro-particles. | 08-22-2013 |
20130230740 | METAL BONDED STRUCTURE AND METAL BONDING METHOD - After a microcrystalline layer having a grain size that is finer than that of a base member is formed on the surface of at least one of a first bonding portion and a second bonding portion, the gap between the first bonding portion and the second bonding portion is filled with a solution into which copper oxide can be eluted, so as to deposit copper oxide contained in the surface oxide film into the solution. By applying pressure and by heating at a temperature of at most the copper recrystallization temperature, the components contained in the solution are removed except for copper, so as to elute copper oxide, thereby bonding the first bonding portion and the second bonding portion via the copper thus deposited. Subsequently, the copper is solid-phase diffused into the first bonding portion and the second bonding portion. | 09-05-2013 |
20130284794 | METAL BONDING APPARATUS - The metal bonding apparatus comprises: a solution supply unit configured to supply a solution which is able to elute an oxide with copper oxide as a principal component, to at least one of a first bonding portion and a second bonding portion; a pressing unit configured to apply pressure to the first bonding portion and the second bonding portion so as to sandwich the solution between the first bonding portion and the second bonding portion, and in a direction in which a distance between the first bonding portion and the second bonding portion is reduced; and a heating unit configured to heat the first bonding portion and the second bonding portion, wherein the first bonding portion and the second bonding portion are bonded by the pressure applied by the pressing unit and the heat from the heating unit. | 10-31-2013 |