Patent application number | Description | Published |
20080290351 | SEMICONDUCTOR LIGHT EMITTING APPARATUS - A light emitting apparatus with a combination of a plurality of LED chips and a phosphor layer is provided and can be configured to significantly reduce variations in chromaticity and luminance. The plurality of semiconductor light emitting devices (LED chips) are disposed with a gap therebetween, and the phosphor layer is formed on the upper surface thereof to bridge over the gaps between the LED chips. The phosphor layer may be uniform in thickness, but can be less in thickness over the gaps between the LED chips than on the upper surface of the LED chips. The phosphor layer can be continuously formed on the upper surface of the array of the chips with no phosphor layer present in between the chips. This configuration allows for reducing variations in luminance and chromaticity which may result from the gaps or the phosphor layer present in between the gaps. | 11-27-2008 |
20090321770 | Semiconductor Light-Emitting Device - The disclosed subject matter includes reliable semiconductor light-emitting devices having a favorable light distribution using an LED chip, which can emit light having a different color as compared to that emitted directly by the LED chip. The semiconductor light-emitting device can include an LED chip having an electrode, a phosphor layer located on the LED chip except for the electrode, a bonding wire connected to the electrode, and a light-reflecting resin. The light-reflecting resin can be disposed on a light-emitting surface that is exposed around the electrode and on the electrode including the bonding wire, and can prevent the LED chip from exhibiting a leak of light that is not wavelength-converted via the phosphor layer, while increasing light that passes through the phosphor layer. In addition, the light-reflecting resin can protect the bonding wire from vibration, etc. Thus, the disclosed subject matter can provide reliable semiconductor light-emitting devices having high brightness without substantial color variability and that can emit various colored light(s). | 12-31-2009 |
20100117511 | COLOR CONVERTED LIGHT EMITTING APPARATUS - A color converted light emitting apparatus is provided that has excellent light emission characteristics and can be manufactured while a viscosity suitable for a printing method is maintained. The color converted light emitting apparatus can include a light emitting element and a color conversion layer containing a phosphor that is excited by light emitted from the light emitting element and which emits fluorescent light. The color conversion layer can further contain, as first and second thickeners, two types of particles with different average primary particle diameters. The average primary particle diameter of the second thickener can be less than one half of the average primary particle diameter of the first thickener. By appropriately adjusting the average primary particle diameters and the amounts of the thickeners added, the light emission characteristics and the emission chromaticity can be improved. For example, the first thickener can be adjusted to be present in the amount of at least 30 wt % and less than 100 wt % based on a total weight of the first and second thickeners. | 05-13-2010 |
20120063117 | LIGHT SOURCE APPARATUS - Provided is a light source apparatus having a phosphor layer | 03-15-2012 |
20120230007 | SEMICONDUCTOR LIGHT SOURCE APPARATUS AND LIGHTING UNIT - A semiconductor light source apparatus can emit various color lights having a substantially uniform color tone and high brightness. The semiconductor light source apparatus can include a radiating substrate, at least one phosphor layer disposed on the radiating substrate and a semiconductor light source emitting blue light. The at least one phosphor layer can be composed of at least one of a glass phosphor and a phosphor ceramic. The light source can be located adjacent the phosphor layer so that the blue light having high brightness can be efficiently reflected on the radiating substrate via the phosphor layer while preventing the blue light from a mirror reflection on the phosphor layer. Thus, the disclosed subject matter can provide a semiconductor light source apparatus that can emit various uniform color lights having high brightness and a lighting unit using the light source apparatus, which can be used for general lighting, vehicle lighting etc. | 09-13-2012 |
20120314411 | LIGHT SOURCE DEVICE AND LIGHTING DEVICE - A light source device can include a solid-state light source configured to emit blue light as excitation light and a phosphor section which is excited by the excitation light from the solid-state light source and which emits fluorescent light longer in wavelength than the light emitted from the solid-state light source. In the light source device, a wavelength selective member configured to transmit the excitation light from the solid-state light source and to reflect the fluorescent light from the phosphor section can be provided between the phosphor section and the solid-state light source. The size of the wavelength selective member can be less than the size of the phosphor section which can be greater than the size of the excitation light spot irradiated with the solid-state light source. | 12-13-2012 |
20130056775 | LIGHT SOURCE DEVICE AND LIGHTING DEVICE - A light source can include: a light source that emits light of a predetermined wavelength within a wavelength region covering the wavelength of ultraviolet light and that of visible light; and a wavelength conversion layer containing a fluorescent material of at least one type that is excited by excitation light from the fixed light source to emit fluorescent light of a wavelength longer than that of light emitted from the fixed light source. The fixed light source and the wavelength conversion layer can be spaced from each other. The light source device can employ a reflection system of extracting at least fluorescent light from an incident surface of the wavelength conversion layer through which excitation light from the fixed light source enters the wavelength conversion layer. The wavelength conversion layer can have a surface structure with depressions or projections. | 03-07-2013 |
20140077237 | SEMICONDUCTOR LIGHT EMITTING APPARATUS - A light emitting apparatus with a combination of a plurality of LED chips and a phosphor layer is provided and can be configured to significantly reduce variations in chromaticity and luminance. The plurality of semiconductor light emitting devices (LED chips) are disposed with a gap therebetween, and the phosphor layer is formed on the upper surface thereof to bridge over the gaps between the LED chips. The phosphor layer may be uniform in thickness, but can be less in thickness over the gaps between the LED chips than on the upper surface of the LED chips. The phosphor layer can be continuously formed on the upper surface of the array of the chips with no phosphor layer present in between the chips. This configuration allows for reducing variations in luminance and chromaticity which may result from the gaps or the phosphor layer present in between the gaps. | 03-20-2014 |
20140333194 | LIGHT SOURCE DEVICE AND FILAMENT - A light source device comprising a filament showing high electric power-to-visible light conversion efficiency is provided. A light source device comprising a translucent gastight container, a filament disposed in the translucent gastight container, and a lead wire for supplying an electric current to the filament is provided. The filament comprises a substrate formed from a metal material and a visible light reflectance-reducing film coating the substrate for reducing visible light reflectance of the substrate. The reflectance of the substrate for visible lights is thereby made low, and the reflectance of the substrate for infrared lights is thereby made high. Therefore, radiation of infrared lights is suppressed, and visible luminous efficiency can be enhanced. | 11-13-2014 |