Yasuyuki Bessho
Yasuyuki Bessho, Kyoto JP
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20090262771 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device capable of suppressing damage of a waveguide is obtained. This GaN-based semiconductor laser chip (semiconductor laser device) includes an n-type GaN substrate of a nitride-based semiconductor and a semiconductor layer of a nitride-based semiconductor formed on the n-type GaN substrate and provided with a ridge portion constituting a waveguide extending in a direction F. The ridge portion (waveguide) is formed on a region approaching a first side from the center of the semiconductor layer. On a region opposite to the first side of the ridge portion (waveguide), a cleavage introduction step is formed from the side of the semiconductor layer, to extend in a direction intersecting with the extensional direction F of the ridge portion (waveguide). | 10-22-2009 |
20100246624 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER - A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device ( | 09-30-2010 |
20100265981 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER - A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-based semiconductor light-emitting diode ( | 10-21-2010 |
Yasuyuki Bessho, Osaka JP
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20090097523 | SEMICONDUCTOR LASER APPARATUS AND METHOD OF MANUFACTURING THE SAME - Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other. | 04-16-2009 |
20090238230 | SEMICONDUCTOR LASER APPARATUS - A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside. | 09-24-2009 |
20090252189 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential. | 10-08-2009 |
20100260227 | SEMICONDUCTOR LASER APPARATUS AND FABRICATION METHOD THEREOF - A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device. | 10-14-2010 |
20120033702 | SEMICONDUCTOR LASER APPARATUS - A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside. | 02-09-2012 |
20120108011 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WITH A BACK ELECTRODE - A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations. | 05-03-2012 |
Yasuyuki Bessho, Uji City JP
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20100054292 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A first semiconductor laser element is formed on a surface of a substrate and has a first cavity facet. The first semiconductor laser element has a first recess in the first cavity facet except for at least a region where a first optical waveguide is formed. The first recess extends in a first direction in which the first cavity facet extends. A second semiconductor laser element is bonded to a first surface of the first semiconductor laser element. The first surface is arranged opposite side of the first laser element to the substrate, and has a second cavity facet formed in substantially the same plane as the first cavity facet. The second semiconductor laser element has a second recess in the second cavity facet except for a region where a second optical waveguide is formed, the second recess extending in a second direction in which the second cavity facet extends. | 03-04-2010 |
Yasuyuki Bessho, Moriguchi-Shi JP
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20090185594 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region. | 07-23-2009 |
20120033701 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER DEVICE AND LIGHT APPARATUS - A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves. | 02-09-2012 |
Yasuyuki Bessho, Uji JP
Patent application number | Description | Published |
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20080310471 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a first semiconductor laser element formed on a surface of a first conductive type substrate, obtained by stacking a first conductive type first semiconductor layer, a first active layer and a second conductive type second semiconductor layer successively from the first conductive type substrate and a second semiconductor laser element obtained by successively stacking a first conductive type third semiconductor layer, a second active layer and a second conductive type fourth semiconductor layer, wherein the third semiconductor layer is electrically connected to the first semiconductor layer by bonding a side of the third semiconductor layer to the surface of the first conductive type substrate through a fusible layer. | 12-18-2008 |
20090103581 | SEMICONDUCTOR LASER DEVICE - In a semiconductor laser device, in a case where an emission direction of a laser beam from a semiconductor laser element portion is a front side, a first front end of a first lead is arranged rearward beyond a first rear end of a second heatsink, and a second surface portion of the second heatsink electrically connected to the semiconductor laser element portion is electrically connected to the first front end. | 04-23-2009 |