Patent application number | Description | Published |
20090231083 | Variable resistor element and its manufacturing method - A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor. | 09-17-2009 |
20100289525 | LOGIC CIRCUIT - A logic circuit with a simple configuration and good current efficiency is provided. The logic circuit includes a two-terminal bistable switching element ( | 11-18-2010 |
20110102939 | SPIN VALVE ELEMENT, METHOD OF DRIVING THE SAME, AND STORAGE DEVICE USING THE SAME - Provided is a spin valve element capable of performing multi-value recording, which includes a pair of ferromagnetic layers having different coercivities from each other, and sandwiching an insulating layer or a non-magnetic layer. The ferromagnetic layer having the smaller coercivity has a substantially circular in-plane profile, and a plurality of island-shaped non-magnetic portions I | 05-05-2011 |
20110143166 | SPIN-VALVE RECORDING ELEMENT AND STORAGE DEVICE - A spin-valve element has a pair of ferromagnetic layers having mutually different coercive forces, sandwiching an insulating layer or a nonmagnetic layer therebetween. The in-plane shape of the spin-valve element is substantially circular in shape but is provided, in the peripheral portion, with a plurality of cutouts N | 06-16-2011 |
20110188297 | MAGNETIC MEMORY ELEMENT, DRIVING METHOD FOR SAME, AND NONVOLATILE STORAGE DEVICE - In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses. | 08-04-2011 |
20110310660 | MAGNETORESISTANCE ELEMENT AND STORAGE DEVICE USING THE SAME - A magnetic memory element having a memory cell of size 4F | 12-22-2011 |
20120012954 | MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME - An object of the invention is to ensure the thermal stability of magnetization even when a magnetic memory element is miniaturized. A magnetic memory element includes a first magnetic layer ( | 01-19-2012 |
20120075922 | MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME - A magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current. The magnetic memory element includes a magnetic tunnel junction having a first magnetic body including a perpendicular magnetization film, an insulating layer, and a second magnetic body serving as a storage layer including a perpendicular magnetization film, which are sequentially stacked. A thermal expansion layer is disposed in contact with the magnetic tunnel junction portion. The second magnetic body is deformed in a direction in which the cross section thereof increases or decreases by the thermal expansion or contraction of the thermal expansion layer due to the flow of a current, thereby reducing a switching current threshold value required to change the magnetization direction. | 03-29-2012 |