Patent application number | Description | Published |
20090231083 | Variable resistor element and its manufacturing method - A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor. | 09-17-2009 |
20100289525 | LOGIC CIRCUIT - A logic circuit with a simple configuration and good current efficiency is provided. The logic circuit includes a two-terminal bistable switching element ( | 11-18-2010 |
20110102939 | SPIN VALVE ELEMENT, METHOD OF DRIVING THE SAME, AND STORAGE DEVICE USING THE SAME - Provided is a spin valve element capable of performing multi-value recording, which includes a pair of ferromagnetic layers having different coercivities from each other, and sandwiching an insulating layer or a non-magnetic layer. The ferromagnetic layer having the smaller coercivity has a substantially circular in-plane profile, and a plurality of island-shaped non-magnetic portions I | 05-05-2011 |
20110143166 | SPIN-VALVE RECORDING ELEMENT AND STORAGE DEVICE - A spin-valve element has a pair of ferromagnetic layers having mutually different coercive forces, sandwiching an insulating layer or a nonmagnetic layer therebetween. The in-plane shape of the spin-valve element is substantially circular in shape but is provided, in the peripheral portion, with a plurality of cutouts N | 06-16-2011 |
20110188297 | MAGNETIC MEMORY ELEMENT, DRIVING METHOD FOR SAME, AND NONVOLATILE STORAGE DEVICE - In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses. | 08-04-2011 |
20110310660 | MAGNETORESISTANCE ELEMENT AND STORAGE DEVICE USING THE SAME - A magnetic memory element having a memory cell of size 4F | 12-22-2011 |
20120012954 | MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME - An object of the invention is to ensure the thermal stability of magnetization even when a magnetic memory element is miniaturized. A magnetic memory element includes a first magnetic layer ( | 01-19-2012 |
20120075922 | MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME - A magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current. The magnetic memory element includes a magnetic tunnel junction having a first magnetic body including a perpendicular magnetization film, an insulating layer, and a second magnetic body serving as a storage layer including a perpendicular magnetization film, which are sequentially stacked. A thermal expansion layer is disposed in contact with the magnetic tunnel junction portion. The second magnetic body is deformed in a direction in which the cross section thereof increases or decreases by the thermal expansion or contraction of the thermal expansion layer due to the flow of a current, thereby reducing a switching current threshold value required to change the magnetization direction. | 03-29-2012 |
Patent application number | Description | Published |
20090296258 | ELECTROMAGNETIC FIELD DETECTING ELEMENT AND DEVICE USING SAME - An electromagnetic field detecting element | 12-03-2009 |
20100284217 | MAGNETIC MEMORY ELEMENT, DRIVING METHOD FOR THE SAME, AND NONVOLATILE STORAGE DEVICE - A magnetic memory element ( | 11-11-2010 |
20100291411 | SPIN VALVE ELEMENT AND METHOD OF MANUFACTURING SAME - A spin valve element including parallelly or serially connected magnetic element groups, each magnetic element group having a plurality of magnetic elements that each include an intermediate layer of an insulating member or a nonmagnetic member sandwiched by a pair of ferromagnetic layers. The plurality of magnetic elements are further connected either in series or in parallel. | 11-18-2010 |
20100296203 | SPIN VALVE ELEMENT AND METHOD OF DRIVING SAME - A method for driving a spin valve element, including passing driving current through the spin valve element to generate an oscillation signal, and performing amplitude modulation of the driving current at a frequency lower than the oscillation frequency of oscillation signals. This amplitude modulation can be ON-OFF modulation, and the interval t | 11-25-2010 |
20100297475 | SPIN VALVE ELEMENT - A spin valve element including an insulating layer or a nonmagnetic layer sandwiched by first and second ferromagnetic layers, and a porous layer having a plurality of minute holes placed in contact with one of the ferromagnetic layers, or near one of the ferromagnetic layer with another intervening layer therebetween. The first ferromagnetic layer is electrically connectable through the minute holes of the porous layer, and the second ferromagnetic layer is also electrically connectable. | 11-25-2010 |
20100308946 | SPIN VALVE ELEMENT DRIVING METHOD AND SPIN VALVE ELEMENT - A spin valve element driving method, and a spin valve element employing such a method, for causing microwave oscillation in a spin valve element. The spin valve element includes an intermediate layer and a pair of ferromagnetic layers including a fixed layer and a free layer sandwiching the intermediate layer, the fixed layer having a higher coercivity than the free layer, and being magnetized in a direction substantially perpendicular to a film plane thereof. The method includes a driving step of passing current from one of the pair of ferromagnetic layers to the other through the intermediate layer. | 12-09-2010 |
20110063899 | MAGNETIC MEMORY ELEMENT, METHOD OF DRIVING SAME, AND NONVOLATILE STORAGE DEVICE - In order to obtain a memory cell of size 4 F | 03-17-2011 |
Patent application number | Description | Published |
20120134201 | MAGNETIC MEMORY ELEMENT AND DRIVING METHOD FOR SAME - A magnetic memory element and a method of driving such an element are disclosed. The magnetic memory element has a magnetic tunnel junction portion with a spin-valve structure having a perpendicular magnetization free layer formed of a perpendicular magnetization film, a perpendicular magnetization pinned layer formed of a perpendicular magnetization film, and a nonmagnetic layer sandwiched between the perpendicular magnetization free layer and the perpendicular magnetization pinned layer, and records information by application of an electric pulse to the magnetic tunnel junction portion. An in-plane magnetization film, interposed in the path of the electric pulse, is disposed in the magnetic tunnel junction portion. The in-plane magnetization film is configured so as to exhibit antiferromagnetic (low-temperature)-ferromagnetic (high-temperature) phase transitions depending on temperature changes based on application of the electric pulse to the magnetic tunnel junction portion. | 05-31-2012 |
20120187945 | NON-CONTACT CURRENT SENSOR - A non-contact current censor includes a spin valve structure ( | 07-26-2012 |
20120230089 | MAGNETORESISTANCE ELEMENT AND NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE USING SAME MAGNETORESISTANCE ELEMENT - A magnetoresistance element is disclosed. The magnetoresistance element includes a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body. The second magnetic body has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface. A heat assist layer that heats the second magnetic body with a heat generated based on a current flowing through the magnetic tunnel junction portion is further provided. | 09-13-2012 |
20120268986 | MAGNETIC MEMORY ELEMENT AND NON-VOLATILE STORAGE DEVICE - The present invention provides a magnetic memory element that has a spin valve structure formed using a free layer, a non-magnetic layer, and a pinned layer. The free layer has a three-layer structure having a first magnetic layer, an intermediate layer, and a second magnetic layer arranged in this order viewed from the non-magnetic layer. The first magnetic layer is made of a ferromagnetic material. The intermediate layer is made of a non-magnetic material. The second magnetic layer is made of an N-type ferromagnetic material having a magnetic compensation point in the temperature range where a memory storage operation can be available. The magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer are parallel to each other at the temperature lower than the magnetic compensation point T | 10-25-2012 |
20130140661 | PEROVSKITE MANGANESE OXIDE THIN FILM AND MANUFACTURING METHOD THEREFOR - A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites of a perovskite crystal lattice and has an (m10) orientation for which m=2n, and 9≧n≧1. A method for manufacturing the film includes forming in a controlled atmosphere using laser ablation an atomic layer or thin film that assumes a pyramidal structure having oxygen-deficient sites in a plane containing the rare earth element and oxygen; and filling the oxygen-deficient sites with oxygen. The controlled atmosphere has an oxygen partial pressure controlled to a thermodynamically required value for creating oxygen deficiencies and contains a gas other than oxygen, and has a total pressure that is controlled to a value at which the A sites have a fixed compositional ratio. | 06-06-2013 |
20130149556 | PEROVSKITE MANGANESE OXIDE THIN FILM - An article including a perovskite manganese oxide thin film is composed of a substrate; and a perovskite manganese oxide thin film formed on the substrate and having an orientation that is an (m | 06-13-2013 |
20130189542 | PEROVSKITE MANGANESE OXIDE THIN FILM - An article including a perovskite manganese (Mn) oxide thin film, includes a substrate having an oriented perovskite structure that is (m10) oriented, where 19≧m≧2, and having an [100 ] axis direction; and a perovskite manganese (Mn) oxide thin film having a perovskite crystal lattice containing barium Ba and a rare earth element Ln in A sites of the perovskite crystal lattice, the perovskite manganese (Mn) oxide thin film being formed on the substrate so as to cover at least part of a surface of the substrate, and having atomic planes stacked in a pattern of LnO-MnO | 07-25-2013 |
20130200457 | STRONGLY CORRELATED OXIDE FIELD EFFECT ELEMENT - Provided is a strongly correlated oxide field effect element demonstrating a phase transition and a switching function induced by electrical means. The strongly correlated oxide field effect element is a strongly correlated oxide field effect element | 08-08-2013 |
20130230722 | CONDUCTIVE THIN FILM AND TRANSPARENT CONDUCTIVE FILM COMPRISING GRAPHENE - A conductive thin film including graphene and having improved conductivity is disclosed. The conductive thin film is composed of a superlattice structure that includes a first and second graphene films formed of respective sheets of carbon atoms that each have at least one atomic layer; and an intercalation film sandwiched between the first and second graphene films. The superlattice structure may have a plurality of stacking units that are stacked and that are each formed of one graphene film and one intercalation film; and the first and second graphene films may have graphene films belonging to two mutually adjacent stacking units from among the plurality of stacking units. The conductive thin film may be transparent and, when the superlattice structure has a plurality of stacking units, a sum total of atomic layers of the sheets of carbon atoms for all the stacking units is ten or fewer. | 09-05-2013 |
20130247952 | THERMOELECTRIC CONVERSION STRUCTURE AND METHOD OF MANUFACTURING SAME - A thermoelectric conversion material in a wire structure or quasi-one-dimensional structure is fabricated simply and with good reproducibility. In one mode of the present invention, a thermoelectric conversion structure | 09-26-2013 |
20130255743 | THERMOELECTRIC CONVERSION STRUCTURE AND METHOD OF MANUFACTURING SAME - A thermoelectric conversion material in which the electron spatial distribution assumes a wire structure or a quasi-one-dimensional structure is fabricated. A mode of the present invention provides a thermoelectric conversion structure 100 of a single crystal 10 of SrTiO | 10-03-2013 |
20130337228 | CRYSTALLINE SUBSTANCE, SUBSTRATE, AND METHOD FOR PRODUCING CRYSTALLINE SUBSTANCE - The present invention provides a crystalline substance that has an uneven structure extending along the direction of a crystal axis. An aspect of the present invention provides a crystalline substance | 12-19-2013 |
20140209850 | STRONGLY CORRELATED NONVOLATILE MEMORY ELEMENT - In aspects of the invention, a strongly correlated nonvolatile memory element is provided which exhibits phase transitions and nonvolatile switching functions through electrical means. In an aspect of the invention, a strongly correlated nonvolatile memory element is provided including, on a substrate, a channel layer, a gate electrode, a gate insulator, a source electrode, and a drain electrode. The channel layer includes a strongly correlated oxide thin film, and is formed of a perovskite type manganite which exhibits a charge-ordered phase or an orbital-ordered phase; the gate insulator is formed in contact with at least a portion of a surface or interface of the channel layer and is sandwiched between the channel layer and the gate electrode, and the source electrode and drain electrode are formed in contact with at least a portion of the channel layer. | 07-31-2014 |
20140217534 | MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME - A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on the first magnetic layer, a second magnetic layer that is formed on the insulating layer, and an expanded interlayer insulating film that comes into contact with side surfaces of the first and second magnetic layers, where at least one of the first magnetic layer and the second magnetic layer is strained and deformed so as to be elongated in an easy magnetization axis direction of the first magnetic layer or the second magnetic layer or compressive strain remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer. | 08-07-2014 |
20140346503 | MANGANESE OXIDE THIN FILM AND OXIDE LAMINATE - The present invention provides a thin film or laminate which ensures switching capabilities by phase transition of Mott transition at room temperature. An embodiment of the present invention provides a manganese oxide thin film | 11-27-2014 |
20140374749 | MANGANESE OXIDE THIN FILM AND OXIDE LAMINATE - The present invention provides a thin film or laminate which ensures switching capabilities by phase transition of Mott transition at room temperature. An embodiment of the present invention provides a manganese oxide thin film | 12-25-2014 |