Patent application number | Description | Published |
20080237859 | DIFFUSION BARRIER FOR INTEGRATED CIRCUITS FORMED FROM A LAYER OF REACTIVE METAL AND METHOD OF FABRICATION - An interconnect structure for an integrated circuit and method of forming the interconnect structure. The method includes depositing a metallic layer containing a reactive metal in an interconnect opening formed within a dielectric material containing a dielectric reactant element, thermally reacting at least a portion of the metallic layer with at least a portion of the dielectric material to form a diffusion barrier primarily containing a compound of the reactive metal from the metallic layer and the dielectric reactant element from the dielectric material, and filling the interconnect opening with Cu metal, where the diffusion barrier surrounds the Cu metal within the opening. The reactive metal can be Co, Ru, Mo, W, or Ir, or a combination thereof. The interconnect opening can be a trench, a via, or a dual damascene opening. | 10-02-2008 |
20090041950 | METHOD AND SYSTEM FOR IMPROVING SIDEWALL COVERAGE IN A DEPOSITION SYSTEM - Embodiments of a method and system for improving the consistency of a layer or a plurality of layers with a desired profile in a deposition system are generally described herein. Other embodiments may be described and claimed. | 02-12-2009 |
20100015798 | METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER - A method for integrating ruthenium (Ru) metal cap layers and modified Ru metal cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration (EM) and stress migration (SM) in bulk Cu metal. In one embodiment, the method includes providing a planarized patterned substrate containing a Cu metal surface and a dielectric layer surface, depositing first Ru metal on the Cu metal surface, and depositing additional Ru metal on the dielectric layer surface, where the amount of the additional Ru metal is less than the amount of the first Ru metal. The method further includes at least substantially removing the additional Ru metal from the dielectric layer surface to improve the selective formation of a Ru metal cap layer on the Cu metal surface. Other embodiments further include incorporating one or more types of modifier elements into the dielectric layer surface, the Cu metal surface, the Ru metal cap layer, or a combination thereof. | 01-21-2010 |
20110092070 | METHOD FOR FILM FORMATION, APPARATUS FOR FILM FORMATION, AND COMPUTER-READABLE RECORDING MEDIUM - Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate. | 04-21-2011 |
20110203310 | RAW MATERIAL RECOVERY METHOD AND TRAPPING MECHANISM FOR RECOVERING RAW MATERIAL - A raw material recovery method for recovering a raw material of an organic metallic compound, which has the property of being stable toward a specific refrigerant without being decomposed thereby, from exhaust gas discharged from a treatment container in which a metallic thin film is formed on the surface of an object to be treated by using source gas obtained by vaporizing the raw material is characterized by being provided with a solidification step for solidifying the unreacted source gas by cooling the exhaust gas by bringing the exhaust gas into contact with the refrigerant and reprecipitating the raw material, and a recovery step for separating and recovering the raw material reprecipitated in the solidification step from the refrigerant. To provide a method for controlling an exhaust gas flow rate so that flow of gas in a processing chamber becomes uniform. | 08-25-2011 |
20110263123 | PLACING TABLE STRUCTURE - Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition restraint gas supply means which is arranged in the placing table for the purpose of supplying decomposition restraint gas, which restraints thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table. | 10-27-2011 |
20120196052 | METHOD OF FORMING COPPER WIRING AND METHOD AND SYSTEM FOR FORMING COPPER FILM - A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs. | 08-02-2012 |
20120196437 | METHODS OF FORMING COPPER WIRING AND COPPER FILM, AND FILM FORMING SYSTEM - A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs. | 08-02-2012 |
20130081938 | MAGNETRON SPUTTERING APPARATUS AND METHOD - A magnetron sputtering apparatus in which a target is disposed to face a substrate includes a magnet array body including a magnet group arranged on a base body, and a rotating mechanism for rotating the magnet array body around an axis perpendicular to the substrate. In the magnet array body, N poles and S poles constituting the magnet group are arranged to be spaced from each other along a surface facing the target such that a plasma is generated based on a drift of electrons by a cusp magnetic field. Magnets located on the outermost periphery of the magnet group are arranged in a line to prevent the electrons from being released from constraint of the cusp magnetic field and jumping out of the cusp magnetic field. A distance between the target and the substrate during sputtering is equal to or less than 30 mm. | 04-04-2013 |
20130237053 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating. | 09-12-2013 |
20140030886 | METHOD FOR FORMING COPPER WIRING - A copper (Cu) wiring forming method includes forming a barrier film on the entire surface of a wafer which has a trench, forming a ruthenium (Ru) film on the barrier film, and filling the trench by forming a pure copper film on the ruthenium film by a physical vapor deposition (PVD). The method further includes forming a copper alloy film on the pure copper film by the PVD, forming a copper wiring by polishing the entire surface by a chemical mechanical polishing, forming a cap layer made of a dielectric material on the copper wiring, and segregating an alloy component included in the copper alloy film in a region including a portion corresponding an interface between the copper wiring and the cap layer. | 01-30-2014 |
20140377947 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - When a recess is formed in a SiCOH film, C is removed from the film to form a damage layer. If the damage layer is removed by hydrofluoric acid or the like, the surface becomes hydrophobic. By supplying a boron compound gas, a silicon compound gas or a gas containing trimethyl aluminum to the SiCOH film, B, Si or Al is adsorbed on the SiCOH film. These atoms bond with Ru and a Ru film is easily formed on the SiCOH film. The Ru film is formed using, for example, Ru | 12-25-2014 |
20150044368 | PLACING TABLE STRUCTURE - Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for the purpose of placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition suppressing gas supply means which is arranged in the placing table for the purpose of supplying decomposition suppressing gas, which suppresses thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table. | 02-12-2015 |