Patent application number | Description | Published |
20120198998 | HYDROGEN GAS RECOVERY SYSTEM AND HYDROGEN GAS SEPARATION AND RECOVERY METHOD - The reaction exhaust gas from which chlorosilanes and hydrogen chloride have been removed in a hydrogen chloride absorption unit ( | 08-09-2012 |
20120237429 | REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - An inner wall | 09-20-2012 |
20130089489 | METHOD FOR CLEANING BELL JAR, METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND APPARATUS FOR DRYING BELL JAR - A bell jar includes a metallic bell jar ( | 04-11-2013 |
20130302528 | APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor. | 11-14-2013 |
20140030440 | SILICON CORE WIRE HOLDER AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD - A core wire holder | 01-30-2014 |
20140134832 | POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD - In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle | 05-15-2014 |
20140302239 | PRODUCTION METHOD FOR POLYCRYSTALLINE SILICON, AND REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION - The present invention provides a method of producing polycrystalline silicon in which silicon is precipitated on a silicon core wire to obtain a polycrystalline silicon rod. In an initial stage (former step) of a precipitation reaction, a reaction rate is not increased by supplying a large amount of source gas to a reactor but the reaction rate is increased by increasing a concentration of the source gas to be supplied, and in a latter step after the former step, the probability of occurrence of popcorn is reduced using an effect of high-speed forced convection caused by blowing the source gas into the reactor at high speed. Thus, a high-purity polycrystalline silicon rod with little popcorn can be produced without reducing production efficiency even in a reaction system with high pressure, high load, and high speed. | 10-09-2014 |
20150017349 | POLYCRYSTALLINE SILICON ROD MANUFACTURING METHOD - Switches (S | 01-15-2015 |
20150037516 | POLYCRYSTALLINE SILICON ROD MANUFACTURING METHOD - Switches (S | 02-05-2015 |