Patent application number | Description | Published |
20080303933 | Solid-State Image Pickup Apparatus, Image Pickup Apparatus, and Image Sensor - In a solid-state image sensor according to this invention, an image signal temperature variation suppressing unit changes a voltage value of a driver voltage applied to multiplying registers in response to varations in sensor temperature of a CCD image sensor. Thus, a charge multiplication gain of a charge multiplying unit is electrically controlled to supress varations in signal strength of image signals due to the variations in the sensor temperature of the CCD image sensor. As a result, without relying on thermal control with which it is very diffcult to realize high precision control, varations in the signal stregth of the image signals due to the varations in the sensor temperature of the CCD image sensor are suppressed easily by controlling the charge multiplication gain of the charge multiplying unit based on the electric control, with which it is very easy to realize high precision control, performed by the image signal temperature variation suppressing unit in response to the variations in the sensor temperature of the CCD image sensor. | 12-11-2008 |
20090256943 | IMAGE PICKUP APPARATUS - An image converter tube | 10-15-2009 |
20100176423 | SOLID-STATE IMAGE SENSOR AND METHOD FOR PRODUCING THE SAME - A floating diffusion ( | 07-15-2010 |
20100182470 | SOLID-STATE IMAGE SENSOR AND IMAGING DEVICE - A pixel output line ( | 07-22-2010 |
20100188538 | SOLID-STATE IMAGE SENSOR AND DRIVE METHOD FOR THE SAME - An independent pixel output line ( | 07-29-2010 |
20100208115 | SOLID-STATE IMAGE SENSOR - A pixel area with a two-dimensional array of pixels ( | 08-19-2010 |
20100265377 | METHOD OF DRIVING AN IMAGE SENSOR, AND AN IMAGE PICKUP APPARATUS - When an external trigger is received as a predetermined signal after receiving a signal concerning a start of imaging, controls are carried out to stop driving of a CCD type solid-state image sensor (CCD) from receipt of the signal concerning a start of imaging until receipt of the external trigger, and to start the driving of the CCD synchronously with the receipt of the external trigger. Thus, the driving of the CCD is not started immediately upon receipt of the signal concerning a start of imaging, and the driving time of the CCD can be shortened by the time from receipt of the signal concerning a start of imaging until receipt of the external trigger, thereby suppressing heat generation of the CCD. | 10-21-2010 |
20120112255 | Solid-State Image Sensor - A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained. | 05-10-2012 |
20130308023 | SOLID STATE IMAGE SENSOR AND METHOD FOR DRIVING THE SAME - A transistor ( | 11-21-2013 |