Patent application number | Description | Published |
20080203574 | INSULATING FILM MATERIAL, MULTILAYER INTERCONNECTION STRUCTURE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below. | 08-28-2008 |
20090061633 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to an aspect of an embodiment, a method of manufacturing a semiconductor device has forming an insulating layer comprising silica-based insulating material, processing the insulating layer, hydrophobizing the insulating layer by applying a silane compound to act on the insulating layer; and irradiating the insulating layer with light or an electron beam. | 03-05-2009 |
20090309221 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device of this invention has a copper wiring layer, of which a layer, to which a composition including at least one substance selected from the group consisting of ammonia and organic bases is applied, and a silicon-containing insulating film are sequentially superimposed on the copper wiring layer. Accordingly, semiconductor devices having insulating layers which adheres well to the copper serving as the wiring material can be obtained. | 12-17-2009 |
20100007031 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching. | 01-14-2010 |
20100115088 | CONFIGURATION-INFORMATION GENERATING APPARATUS AND CONFIGURATION-INFORMATION GENERATING METHOD - From each server configuring an IT system, process information about a process operating on the server is obtained before a series of processes including a process corresponding to an application for providing an IT service is started in any of the servers. Also, the process information is obtained over a plurality of number of times from start to end of performing the series of processes. Then, from out of the process information during the series of processes, process information corresponding to the process information before the series of processes is started is removed, and then process information while the series of processes including the process corresponding to the application is being performed is specified. From the specified process information, a process name and identification information of a server where the process is performed are extracted, and the extracted process name and identification information are tied together, thereby generating configuration information. | 05-06-2010 |
20100133692 | PROCESS FOR PRODUCING SILICIC COATING, SILICIC COATING AND SEMICONDUCTOR DEVICE - A silicic coating of 2.4 g/cm | 06-03-2010 |
20100140807 | INSULATING FILM MATERIAL, MULTILAYER WIRING BOARD AND PRODUCTION METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1; | 06-10-2010 |
20100320618 | INTERCONNECTION SUBSTRATE, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE - An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: | 12-23-2010 |
20110068471 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in. | 03-24-2011 |
20110078298 | DATA COLLECTION APPARATUS AND METHOD THEREOF - A data collection apparatus includes an information storing unit which stores application information collected from a server providing a service by running an application and includes detail information indicating a detail of the application, an information collecting unit which collects the application information from the server, an information identifying unit which identifies application information in which an abnormality has occurred and application information, affected by the abnormality, a first comparing unit which compares, as to the application information identified by the information identifying unit, all application information including the detail information and all application information including the detail information collected in the previous point, and extracts application information different from the application information collected in a previous point, and an information sending unit which sends the application information, extracted by the first comparing unit, to a data management apparatus which manages the application information. | 03-31-2011 |
20110099273 | MONITORING APPARATUS, MONITORING METHOD, AND A COMPUTER-READABLE RECORDING MEDIUM STORING A MONITORING PROGRAM - A monitoring apparatus configured to monitor applications running on one or more monitored apparatuses; the monitoring apparatus includes: an enquiry packet generator and transmitter that generates multiple types of enquiry packets, and successively transmits the multiple types of enquiry packets to respective communication ports on the one or more monitored servers; an enquiry packet response receiver that receives enquiry packet responses, which are transmitted in response to the multiple types of enquiry packets from communication ports on the one or more monitored apparatuses; and an application analyzer that analyzes the content of the enquiry packet responses transmitted in response to the multiple types of enquiry packets, and analyzes applications running on the one or more monitored servers as applications to be monitored. | 04-28-2011 |
20110187002 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD - A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level. | 08-04-2011 |
20110223766 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes: exposing an insulating film including a siloxane bond to an energy beam or plasma; and exposing the insulating film to a gas (excluding N | 09-15-2011 |
20110246541 | DATA MANAGEMENT APPARATUS AND METHOD - The present invention, an apparatus includes a data management apparatus comprising, a determination unit configured to determine whether an analyzing apparatus is in a communicable state when a configuration information data indicating a status of a server apparatus is received from a data collection apparatus, the data analyzing apparatus analyzing the configuration information data, an unprocessed information storage unit configured to store the received configuration information data once it is determined that data analyzing apparatus is in an incommunicable state, an integrating unit configured to integrate a plurality of configuration information data stored in the storage unit in accordance with a predetermined condition; and a notifying unit configured to send, to the analyzing apparatus, a message indicating that the data management apparatus is storing the configuration information data integrated by the integrating unit once it is determined that the data analyzing apparatus is in a communicable state. | 10-06-2011 |
20120181070 | INTERCONNECTION STRUCTURE AND METHOD OF FORMING THE SAME - After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu—N—R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu—N—R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP. | 07-19-2012 |
20130154102 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD - A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level. | 06-20-2013 |