Patent application number | Description | Published |
20100062285 | MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME - An aspect of the present invention relates to a magnetic recording medium comprising a magnetic layer on a nonmagnetic organic material support, wherein the magnetic layer comprises a magnetic material comprising a hard magnetic material comprising a rare earth element, and on a portion of a surface of the hard magnetic material, a soft magnetic region, and the soft magnetic region is exchange-coupled with the hard magnetic material. Another aspect of the present invention relates to a method of manufacturing a magnetic recording medium comprising forming a hard magnetic layer by coating a coating liquid comprising a hard magnetic material comprising a rare earth element on a nonmagnetic organic material support, and forming, on at least a portion of a surface of the hard magnetic material comprised in the hard magnetic layer, a soft magnetic region, the soft magnetic region being exchange-coupled with the hard magnetic material. | 03-11-2010 |
20110157864 | LIGHT EMITTING DEVICE - According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer. | 06-30-2011 |
20110216552 | LIGHT EMITTING DEVICE - An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component. | 09-08-2011 |
20110216554 | LIGHT EMITTING DEVICE - An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component. | 09-08-2011 |
20110216798 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less. | 09-08-2011 |
20110216799 | SEMICONDUCTOR LASER DEVICE - According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe. | 09-08-2011 |
20110222149 | LIGHT-EMITTING APPARATUS, DISPLAY APPARATUS, LIGHT EMITTER, AND METHOD OF FABRICATING LIGHT EMITTER - According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence. | 09-15-2011 |
20120002137 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device of an embodiment has: a semiconductor laser diode emitting a first laser beam; a first reflecting unit configured to reflect the first laser beam and form a second laser beam having a one-dimensionally spread distribution; and a second reflecting unit configured to reflect the second laser beam and form a third laser beam having a two-dimensionally spread distribution. The device also has: an optical switch using liquid crystal, the optical switch being configured to control passage and blocking of the third laser beam; and a first scattering unit scattering the third laser beam. | 01-05-2012 |
20120056524 | LIGHT EMITTER AND LIGHT EMITTING DEVICE - A light emitter according to one embodiment has a fiber shape. And it includes a core portion containing a light emitting material, the material absorbing excitation light and emitting light having a wavelength longer than a wavelength of the excitation light. And also it includes a clad portion provided outside the core portion, the clad portion having a first region and second regions, the second regions being periodically formed in the first region, the second regions having a refractive index higher than a refractive index of a first region, the refractive index of the first region being equal to or higher than a refractive index of the core portion. | 03-08-2012 |
20120228581 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm | 09-13-2012 |
20130044473 | LIGHT EMITTING DEVICE - A light emitting device according to embodiments has: a substrate; first light emitting units arranged along a first straight line on the substrate; second light emitting units arranged along a second straight line on the substrate, the second straight line being parallel to the first straight line, the second light emitting units having an emission color different from the first light emitting units; and third light emitting units arranged along a third straight line on the substrate, the third straight line being parallel to the first and second straight lines, the third light emitting units having an emission color different from the first and second light emitting units, wherein a distance between light emitting units of a same emission color is longer than a minimum distance between light emitting units of different emission colors. | 02-21-2013 |
20130234584 | WHITE LIGHT EMITTING DEVICE - A white light emitting device according to an embodiment includes: a light emitting element having a peak wavelength in a wavelength range of 430 nm or more and 470 nm or less; a first fluorescent material emits light with a first peak wavelength of 525 nm or more and 560 nm or less; a second fluorescent material emits light with a second peak wavelength longer than the first peak wavelength; and a third fluorescent material emits light with a third peak wavelength of 620 nm or more and 750 nm or less, which is longer than the second peak wavelength. The first fluorescent material and the second fluorescent material has a composition of MSi | 09-12-2013 |
20130234591 | WHITE LIGHT EMITTING DEVICE - A white light emitting device of an embodiment includes: a light emitting element having a peak wavelength in a wavelength range from 430 to 470 nm both inclusive, a first fluorescent material formed over the light emitting element, and emitting light having a first peak wavelength of 530 to 580 nm both inclusive and having a first half width, and a second fluorescent material formed over the light emitting element, and emitting light having a second peak wavelength that is longer than the first peak wavelength and ranges from 570 to 620 nm both inclusive, and having a second half width that is 100 nm or less and is equal to or narrower than the first half width. | 09-12-2013 |
20140091501 | METHOD OF MANUFACTURING HEXAGONAL FERRITE MAGNETIC PARTICLES - The method of manufacturing hexagonal ferrite magnetic particles, which includes providing hexagonal ferrite magnetic particles by conducting calcination of particles comprising an alkaline earth metal salt and an iron salt to cause ferritization; and further includes causing a glass component to adhere to the particles and then conducting the calcination of the particles to form a calcined product in which hexagonal ferrite is detected as a principal component in X-ray diffraction analysis; and removing the glass component from a surface of the calcined product that has been formed. | 04-03-2014 |
20140252391 | LIGHT-EMITTING DEVICE - A light-emitting device of an embodiment includes a light-emitting element emitting blue excitation light and a first phosphor excited by the blue excitation light and emitting fluorescence. A peak wavelength of the fluorescence is not shorter than 520 nm and shorter than 660 nm and the peak wavelength of the fluorescence shifting in the same direction when a peak wavelength of the blue excitation light shifts. The first phosphor is one of a yellow phosphor emitting yellow fluorescence, a green phosphor emitting green fluorescence, a yellow-green/yellow phosphor emitting yellow-green/yellow fluorescence and a red phosphor emitting red fluorescence. | 09-11-2014 |
20140299904 | LIGHT EMITTING DEVICE - A light emitting device according to embodiments includes a light emitting element emitting light having a peak wavelength of 425 nm or more and 465 nm or less, a first phosphor emitting light having a peak wavelength of 485 nm or more and 530 nm or less, a second phosphor emitting light having a peak wavelength longer than that of the first phosphor, and a third phosphor emitting light having a peak wavelength longer than that of the second phosphor. Then, when the peak wavelength of the light emitting element is λ | 10-09-2014 |