Patent application number | Description | Published |
20090107394 | Device for manufacturing sic single crystal and method for the same - A device for manufacturing a SiC single crystal includes: a raw material gas introduction pipe; a raw material gas heat chamber having a raw material gas supply passage for heating the gas in the passage; a reaction chamber having a second sidewall, an inner surface of which contacts an outer surface of a first sidewall of the heat chamber, and having a bottom, on which a SiC single crystal substrate is arranged; and a discharge pipe in a hollow center of the raw material gas heat chamber. The supply passage is disposed between an outer surface of the discharge pipe and an inner surface of the first sidewall. The discharge pipe discharges a residual gas, which is not used for crystal growth of the SiC single crystal. | 04-30-2009 |
20100199910 | METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL - In a method of manufacturing a silicon carbide single crystal, a silicon carbide substrate having a surface of one of a ( | 08-12-2010 |
20100200866 | SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device - A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved. | 08-12-2010 |
20100307417 | Manufacturing device for silicon carbide single crystal - A manufacturing device of a silicon carbide single crystal includes: a reaction chamber; a seed crystal arranged in the reaction chamber; and a heating chamber. The seed crystal is disposed on an upper side of the reaction chamber, and the gas is supplied from an under side of the reaction chamber. The heating chamber is disposed on an upstream side of a flowing passage of the gas from the reaction chamber. The heating chamber includes a hollow cylindrical member, a raw material gas inlet, a raw material gas supply nozzle and multiple baffle plates. The inlet introduces the gas into the hollow cylindrical member. The nozzle discharges the gas from the hollow cylindrical member to the reaction chamber. The baffle plates are arranged on the flowing passage of the gas between the inlet and the nozzle. | 12-09-2010 |
20110147493 | METHOD FOR FORMING PERIODIC STRUCTURE AND FUEL INJECTION SYSTEM HAVING THE PERIODIC STRUCTURE - A method is for forming a periodic groove arrangement. According to the method, a base material made of metal is provided. Furthermore, the periodic groove arrangement, which includes a plurality of periodic grooves, is formed on a surface of the base material by irradiating and scanning the surface of the base material with a pulsed laser. A fuel injection system includes a nozzle hole forming part and the periodic groove arrangement formed by the method. The nozzle hole forming part includes a nozzle hole, which passes through the nozzle hole forming part and through which fuel is injected. The periodic groove arrangement is formed on an outer surface of the nozzle hole forming part. | 06-23-2011 |
20110203513 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - In a method of manufacturing a silicon carbide substrate, a defect-containing substrate made of silicon carbide is prepared. The defect-containing substrate has a front surface, a rear surface being opposite to the front surface, and a surface portion adjacent to the front surface. The detect-containing substrate includes a screw dislocation in the surface portion. The front surface of the defect-containing substrate is applied with an external force so that a crystallinity of the surface portion is reduced. After being applied with the external force, the defect-containing substrate is thermally treated so that the crystallinity of the surface portion is recovered. | 08-25-2011 |
20120142173 | MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL - A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other. | 06-07-2012 |
20140127071 | MANUFACTURING METHOD OF MAGNETIC REFRIGERATION MATERIAL - In a manufacturing method of a magnetic refrigeration material, a powder material made of La (Fe, Si) | 05-08-2014 |