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Yasunaga, Kyoto

Kenichi Yasunaga, Kyoto JP

Patent application numberDescriptionPublished
20100276617FLOW CHANNEL SWITCHING VALVE - In order to improve the durability of a rotor, a flow channel switching valve is provided, which includes a stator having a contact plane and a rotor having a contact plane. The stator has circulation openings on the contact plane, and the circulation openings are respectively connected to a plurality of flow channels. The rotor has at least one groove for communicating two of the circulation openings of the stator. The rotor is forced to press against the contact plane of the stator to rotationally slide, so as to switch the circulation openings of the stator that need to be communicated. Polishing is performed on the contact plane of the stator after being applied with a diamond like carbons coating. Furthermore, the contact plane of the rotor is made of a resin.11-04-2010
20100326215SAMPLE INTRODUCTION METHOD - A sample introduction method for reducing carry-over is provided. After a sample introduction device in a total volume injection method draws a proper amount of a sample solution from a sample container and further draws a solution with the same composition as a mobile phase solution with a needle 12-30-2010
20110247405Sample Injection Port and Auto-Sampler Having the Same - A sample injection port 10-13-2011
20120103887Liquid Chromatograph System - A channel-switching valve into which a high-pressure liquid and a low-pressure liquid flow is provided. The channel-switching valve includes a stator and a rotor which has a surface in contact with one surface of the stator and rotates while sliding on the contact surface. The stator has a plurality of liquid flow ports open to the contact surface, and the rotor has a plurality of channel grooves for connecting the liquid flow ports. One of the channel grooves is a straight groove passing through the rotational center of the rotor, and the other channel grooves are line-symmetrically arranged with respect to the straight channel groove. Alternatively, among the channel grooves, the channel grooves into which the high-pressure liquid flows are configured to be located on both sides of the rotational center of the rotor. As a result, a local load acting on the rotor during a high-pressure liquid-feeding process is reduced, so that the contact surface is prevented from being scraped off by the edge of the opening of a port during the rotation of the rotor.05-03-2012
20120111127Autosampler - An autosampler is provided with a needle, a measuring pump which sucks and discharges liquid through the needle, a movement mechanism for the needle, and an injection port which has a needle sealing surface. A sample liquid is sucked into the needle and then the sample liquid discharged with the tip of the needle pressed to the needle sealing surface. When cleaning the needle sealing surface, a cleaning liquid in within the injection port is sucked and then the cleaning liquid is discharged and sucked into the injection port at a position at which the tip of the needle does not make contact with the needle sealing surface. Alternatively, after the cleaning liquid is discharged into the injection port, the needle may be caused to perform an up and down motion such that the tip of the needle contacts the needle sealing surface and then is lifted.05-10-2012

Patent applications by Kenichi Yasunaga, Kyoto JP

Shoji Yasunaga, Kyoto JP

Patent application numberDescriptionPublished
20090184412RESIN-SEAL TYPE SEMICONDUCTOR DEVICE - There is provided a resin-seal type semiconductor device (BGA type semiconductor device) whose heat dissipating characteristic is improved, so that it is prevented from deteriorating in reliability. This BGA type semiconductor device includes a wiring substrate on a predetermined area on which a semiconductor chip is mounted; a plurality of metal bumps that are formed to be arranged at predetermined intervals in an area of the substrate different from the area on which the semiconductor chip is mounted; and a sealing resin layer that covers at least the semiconductor chip. Each of the plurality of metal bumps is covered with the sealing resin layer described above, with a part thereof exposed at a top face of the sealing resin layer.07-23-2009
20100006995RESIN-ENCAPSULATED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A resin-encapsulated semiconductor device having a semiconductor chip which is prevented from being damaged. The resin-encapsulated semiconductor device comprises a semiconductor chip including a silicon substrate, a die pad to which the semiconductor chip is secured through a first solder layer, a resin-encapsulating layer encapsulating the semiconductor chip, and lead terminals electrically connected to the semiconductor chip and including inner lead portion covered with the resin-encapsulating layer. The lead terminals are made of copper or a copper alloy. The die pad is made of 42 alloy or a cover alloy and has a thickness (about 0.125 mm) less than the thickness (about 0.15 mm) of the lead terminals.01-14-2010
20100013069SEMICONDUCTOR DEVICE, LEAD FRAME AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device and a lead frame capable of preventing development of defective mounting resulting from a burr and a method of manufacturing a semiconductor device with the lead frame are provided. The semiconductor device includes a semiconductor chip and a lead arranged on the periphery of the semiconductor chip to extend in a direction intersecting with the side surface of the semiconductor chip, so that at least an end portion on the side farther from the semiconductor chip is bonded to a mounting substrate. A groove opened on a surface bonded to the mounting substrate and an end face on the side farther from the semiconductor chip is formed in the lead over the full width in the width direction orthogonal to the thickness direction and along the end face. An embedded body made of solder is embedded in the groove.01-21-2010
20100270666Semiconductor device and method of manufacturing semiconductor device - The semiconductor device according to the present invention includes a semiconductor chip, a solid plate to which the semiconductor chip is bonded, and a bonding member made of a BiSn-based material interposed between the semiconductor chip and the solid plate, while the bonding member has a heat conduction path made of Ag for improving heat conductivity between the semiconductor chip and the solid plate.10-28-2010
20120007247Resin-Encapsulated Semiconductor Device - A resin-sealed semiconductor device includes a semiconductor chip including a silicon substrate; a die pad on which the semiconductor chip is secured via a solder layer; a sealing resin layer sealing the semiconductor chip; and lead terminals connected electrically with the semiconductor chip. One end portion of the lead terminals is covered by the sealing resin layer. The die pad and the lead terminals are formed of copper and a copper alloy, and the die pad is formed with a thickness larger than a thickness of the lead terminals, which is a thickness of 0.25 mm or more.01-12-2012

Patent applications by Shoji Yasunaga, Kyoto JP

Shouji Yasunaga, Kyoto JP

Patent application numberDescriptionPublished
20120168946SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR - A semiconductor device includes a semiconductor chip, a lead arranged on a side portion of the semiconductor chip, and a wire, whose one end and another end are bonded to the semiconductor chip and the lead respectively, having a ball portion and a stitch portion wedged in side elevational view on the semiconductor chip and the lead respectively. An angle of approach of the wire to the lead is not less than 50°, and the length of the stitch portion is not less than 33 μm.07-05-2012

Yoshinobu Yasunaga, Kyoto JP

Patent application numberDescriptionPublished
20090236564MIXED MATERIAL OF LITHIUM IRON PHOSPHATE AND CARBON, ELECTRODE CONTAINING SAME, BATTERY COMPRISING SUCH ELECTRODE, METHOD FOR PRODUCING SUCH MIXED MATERIAL, AND METHOD FOR PRODUCING BATTERY - Disclosed is a mixed material of lithium iron phosphate and carbon, which contains secondary particles as aggregates of lithium iron phosphate primary particles and a fibrous carbon which is present inside the secondary particles. An electrode containing such a mixed material, a battery comprising such an electrode, a method for producing such a mixed material, and a method for producing a battery are also disclosed.09-24-2009
20090297952POSITIVE ELECTRODE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, NONAQUEOUS ELECTROLYTE SECONDARY BATTERY INCLUDING THE SAME, AND METHOD FOR PRODUCING THE SAME - Disclosed is a positive electrode material for nonaqueous electrolyte secondary batteries, which comprises a porous body composed of a material containing a polyanion. Also disclosed is a method for producing such a positive electrode material for nonaqueous electrolyte secondary batteries. When a carbon coating is formed on the surface of a material containing a polyanion of lithium iron phosphate or the like by a conventional method, the capacity during low rate discharge is improved but the capacity is not sufficient. In the present invention, the positive electrode material for nonaqueous electrolyte secondary batteries, which comprises a porous body composed of a material containing a polyanion, has a structure wherein the inner walls of the pores of the porous body are provided with a layered carbon, for improving the discharge capacity.12-03-2009
20110068293POSITIVE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY - The invention provides a polyanion-based positive active material which can improve storage stability (especially, high temperature storage stability), charge and discharge cycle performance and the like of a lithium secondary battery, and a lithium secondary battery using the same. The positive active material for a lithium ion secondary battery contains lithium iron cobalt phosphate represented by the general formula: Li03-24-2011