Patent application number | Description | Published |
20100155905 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer before forming a second planarizing layer. In the assisting layer forming step, the planarization assisting layer is formed so that a height of the planarization assisting layer from a surface of the first planarizing layer located on a side opposite to the substrate layer becomes equal between at least a part of a region where the conductive films are formed, and at least a part of a region where no conductive film is formed. | 06-24-2010 |
20100244136 | SEMICONDUCTOR DEVICE, SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM-INCLUDING SUBSTRATE, AND PRODUCTION METHODS THEREOF - The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics and a reduced wiring resistance. | 09-30-2010 |
20100244185 | SEMICONDUCTOR DEVICE, SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM-INCLUDING SUBSTRATE, AND PRODUCTION METHODS THEREOF - The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics. | 09-30-2010 |
20100252885 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device ( | 10-07-2010 |
20100283104 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An element portion forming step includes an insulating film forming step of forming an insulating film on a surface of a base layer, a conductive layer forming step of uniformly forming a conductive layer on a surface of the insulating film, and an electrode forming step of patterning the conductive layer to form an electrode. A delamination layer forming step of ion implanting a delamination material into the base layer to form a delamination layer is performed before the electrode forming step. | 11-11-2010 |
20100295105 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes: an element portion formation step of forming an element portion on a base layer; a delaminating layer formation step of forming a delaminating layer in the base layer; a bonding step of bonding the base layer having the element portion to a substrate; and a separation step of separating and removing a portion of the base layer in the depth direction along the delaminating layer by heating the base layer bonded to the substrate. The method further includes, after the separation step, an ion implantation step of ion-implanting a p-type impurity element in the base layer for adjusting the impurity concentration of a p-type region of the element. | 11-25-2010 |
20110006376 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND DISPLAY DEVICE - The present invention provides a semiconductor device capable of improving subthreshold characteristics of a PMOS transistor that is included in a thinned base layer and bonded to another substrate, a production method of such a semiconductor device, and a display device. The semiconductor device of the present invention is a semiconductor device, including:
| 01-13-2011 |
20110309467 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed is a semiconductor device including a substrate for bonding ( | 12-22-2011 |
20120155038 | FLEXIBLE CIRCUIT BOARD AND MANUFACTURING METHOD THEREOF - The present invention provides a high-performance flexible circuit board having excellent flexibility, a fine wiring pattern, and fine electric contacts, and a manufacturing method thereof. In a flexible circuit board ( | 06-21-2012 |
20120326264 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device of the present invention includes the steps of forming a single crystal semiconductor device, attaching the single crystal semiconductor device on a substrate, forming a TFT on a glass substrate, and electrically connecting the single crystal semiconductor device and the TFT. In the step of forming a single crystal semiconductor device, an alignment mark is provided at the single crystal semiconductor device. In the step of attaching a single crystal semiconductor device, the single crystal semiconductor device is positioned and attached on the glass substrate based on the machining accuracy of an attachment device. In the step of forming a TFT, the TFT is positioned and provided on the glass substrate based on the alignment mark provided at the single crystal semiconductor device. | 12-27-2012 |
20130009302 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device ( | 01-10-2013 |
20130037816 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device ( | 02-14-2013 |
20130100392 | FLEXIBLE DISPLAY DEVICE AND METHOD FOR MANUFACTURING FLEXIBLE DISPLAY DEVICE - A flexible display device ( | 04-25-2013 |
20130265530 | DISPLAY DEVICE AND THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR - A display device includes a TFT substrate ( | 10-10-2013 |
20140078458 | ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - The thickness of a rear surface-side inorganic film ( | 03-20-2014 |
20140320777 | DISPLAY DEVICE SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - A liquid crystal display device ( | 10-30-2014 |