Patent application number | Description | Published |
20120212962 | LIGHT-EMITTING GLASS, LIGHT-EMITTING DEVICE EQUIPPED WITH THE LIGHT-EMITTING GLASS, AND PROCESS FOR PRODUCING LIGHT-EMITTING GLASS - Provided is a light-emitting glass which is applicable to, e.g., white illuminators including a light-emitting diode as a light source, and which emits light of a warm white color when irradiated with near ultraviolet light and combines long-term weatherability with high heat resistance. Also provided are a light-emitting device equipped with the light-emitting glass and a process for producing the light-emitting glass. The light-emitting glass includes, as the base glass, borosilicate or silicate glass having a separated-phase structure, whereby the base glass is efficiently doped with, for example, transition metal ion clusters which emit light of a warm white color upon irradiation with near ultraviolet light. With this glass, it is possible to attain increases in excitation wavelength and emission wavelength. The glass thus emits, based on a multiple scattering effect, high-intensity light of a warm white color upon irradiation with near ultraviolet light. Furthermore, since the light-emitting glass includes borosilicate or silicate glass, which is a common glass material, as the constituent material, it is possible to inexpensively provide a fluorescent material combining long-term weatherability with respect to ultraviolet rays, etc. with resistance to high temperatures. | 08-23-2012 |
Patent application number | Description | Published |
20100327459 | SEMICONDUCTOR DEVICE HAVING PLURALITY OF WIRING LAYERS AND DESIGNING METHOD THEREOF - A semiconductor device includes first and second wirings formed in a first wiring layer and extending parallel to an X direction, third and fourth wirings formed in a third wiring layer and extending parallel to a Y direction; fifth and sixth wirings formed in a second wiring layer positioned between the first and second wiring layers, a first contact conductor that connects the first wiring to the third wiring; and a second contact conductor that connects the second wiring to the fourth wiring. The first and second contact conductors are arranged in the X direction. According to the present invention, because the first and second contact conductors that connect wiring layers that are two or more layers apart are arranged in one direction, a prohibited area that is formed in the second wiring layer can be made narrower. Therefore, the flexibility of the layout of the second wiring layer is enhanced and the restriction on the wiring density can be relaxed. | 12-30-2010 |
20110102955 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first pad, and a sub-trunk line elongated in a first direction; a main-trunk line arranged between the first pad and the sub-trunk line and elongated in the first direction. The semiconductor device further includes a first plug line elongated in a second direction crossing the first direction, the first plug line being connected between the first pad and the main-trunk line without being direct contact with the sub-trunk line. The semiconductor device further includes a second plug line elongated in the second direction, the second plug line being connected between the main-trunk line and the sub-trunk line, and a first element coupled to the sub-trunk line. | 05-05-2011 |
20120243341 | SEMICONDUCTOR DEVICE HAVING PLURAL DATA BUSES AND PLURAL BUFFER CIRCUITS CONNECTED TO DATA BUSES - Disclosed herein is a device that includes a plurality of buffer circuits and data buses coupled to the buffer circuits. Each of the data buses includes first and second portions. The first portions of the data buses are arranged at a first pitch in the second direction, and the second portions of the data buses are arranged at a second pitch in the second direction, the second pitch being smaller than the first pitch. | 09-27-2012 |
20120247812 | SEMICONDUCTOR DEVICE WITH POWER SUPPLY LINE SYSTEM OF REDUCED RESISTANCE - A semiconductor device with a power wiring system. The device includes a multi-level wiring structure including a lower-level wiring layer and an upper-level wiring layer over the lower-level wiring layer, and the power wiring system includes a first power supply line and a second power supply line provided as the first-level wiring layer and extending in a first direction in substantially parallel to each other, a third power supply line provided as the upper-level wiring layer and extending in the first direction with overlapping the first power supply line, the first and third power supply lines conveying first and second power voltages, respectively, which are different from each other, and a fourth power supply line provided as the upper-level wiring layer and extending in the first direction with overlapping the second power supply line, the second and fourth power supply lines conveying the second and first power voltages, respectively. | 10-04-2012 |
20130154025 | SEMICONDUCTOR DEVICE INCLUDING CAPACITOR STABILIZING VARIATION OF POWER SUPPLY VOLTAGE - Disclosed herein is a semiconductor device that includes a first line supplied with a first voltage, a second line supplied with a second voltage, a first node, at least one first capacitor connected between the first line and the first node, at least one second capacitor connected between the node and the second line, and a protective element connected between the first node and the second line in parallel to the second capacitor. | 06-20-2013 |
20130193586 | SEMICONDUCTOR DEVICE HAVING PLURALITY OF WIRING LAYERS AND DESIGNING METHOD THEREOF - A semiconductor device includes first and second wirings formed in a first wiring layer and extending parallel to an X direction, third and fourth wirings formed in a third wiring layer and extending parallel to a Y direction; fifth and sixth wirings formed in a second wiring layer positioned between the first and second wiring layers, a first contact conductor that connects the first wiring to the third wiring; and a second contact conductor that connects the second wiring to the fourth wiring. The first and second contact conductors are arranged in the X direction. Because the first and second contact conductors that connect wiring layers that are two or more layers apart are arranged in one direction, a prohibited area that is formed in the second wiring layer can be made narrower. | 08-01-2013 |