Patent application number | Description | Published |
20090030134 | Inorganic Hollow Particle, Process For Producing The Same, And Composition Containing The Same - The present invention herein provides fine inorganic hollow powder having a high hollowness rate, which can be incorporated into, for instance, a low dielectric rubber or resin composition. The inorganic hollow powder has an average hollowness rate of higher than 70% by volume and an average particle size ranging from 3 to 20 μm and the powder preferably has an average hollowness rate ranging from 75 to 85% by volume, an average particle size ranging from 5 to 15 μm, a maximum particle size of not more than 25 μm, a specific surface area of not more than 10 m | 01-29-2009 |
20090306272 | CERAMIC POWDER AND METHOD OF USING THE SAME - The present invention herein provides ceramic powder which is to be incorporated into rubber or a resin and which can be used as, for instance, a semiconductor-sealing material and for the preparation of a composition excellent in the narrow interstice-filling up property and moldability. The ceramic powder has a multiple peak-frequency type particle size distribution which has at least two peaks, as determined according to the laser diffraction-scattering type particle size distribution analyzer, wherein the maximum particle size observed for the first peak falls within the range of from 12 to 30 μm; that observed for the second peak falls within the range of from 2 to 7 μm; the content of the particles having a particle size of greater than 7 μm and less than 12 μm is not more than 18% (including 0%); and wherein the ratio (F | 12-10-2009 |
20090312477 | CERAMIC POWDER AND APPLICATIONS THEREOF - The present invention provides ceramic powder capable of being incorporated into rubber or a resin for the preparation of a composition, which shows excellent heat resistance and flame retardancy and which is used, for instance, as a semiconductor-sealing material. The ceramic powder has a multi-peak frequency distribution pattern having at least two peaks as a particle size distribution as determined using a laser diffraction-scattering type particle size-analyzer, wherein the maximum particle size for the first peak ranges from 40 to 80 μm and that for the second peak ranges from 3 to 8 μm and wherein the rate of the particles having a particle size of not less than 20 μm and less than 40 μm is not more than 20% by mass (inclusive of 0% by mass). | 12-17-2009 |
20100204383 | SILICA POWDER, PROCESS FOR ITS PRODUCTION, AND COMPOSITION EMPLOYING IT - To provide a silica powder which is excellent in flowability and packing properties and which is less likely to form a flash, a process for its production, and a composition having it incorporated in at least one of a rubber and a resin, particularly a sealing material. | 08-12-2010 |
20100222487 | INORGANIC HOLLOW POWDER, PROCESS FOR PRODUCING THE INORGANIC HOLLOW POWDER, AND COMPOSITION COMPRISING THE INORGANIC HOLLOW POWDER - Inorganic hollow powder is provided having a high purity, an enhanced fineness and a high hollowness. Specifically, inorganic hollow powder is provided having an average particle diameter of 1 to 5 μm, the maximum particle diameter of 20 μm or less, a particle size distribution standard deviation of 3 μm or less, and an average hollowness of 35 to 70 vol %. The inorganic hollow powder is obtained, for instance, by supplying, via an inorganic feed material powder supply pipe at a discharge rate of 80 m/s or more, inorganic raw material powder having a specific surface area of 500 m | 09-02-2010 |
20110021666 | AMORPHOUS SILICA POWDER, PROCESS FOR ITS PRODUCTION, AND SEALING MATERIAL FOR SEMICONDUCTORS - To provide an amorphous silica powder suitable for a sealing material for semiconductors having improved HTSL properties and HTOL properties, and a process for its production. | 01-27-2011 |
20110077329 | AMORPHOUS SILICEOUS POWDER, PROCESS FOR PRODUCTION THEREOF, RESIN COMPOSITION, AND SEMICONDUCTOR ENCAPSULATION MATERIAL - A semiconductor encapsulation material which exhibits a low viscosity and further improved moldability in encapsulation even when highly loaded with an inorganic filler; an amorphous siliceous powder suitable for the preparation of a resin composition useful as the encapsulation material; and a process for the production of the amorphous siliceous powder. An amorphous siliceous powder having a content of Si and Al of 99.5 mass % or above in terms of oxides, wherein the Al content in the particle size region of 15 μm to less than 70 μm is 100 to 30000 ppm in terms of oxides; the Al content in the particle size region of 3 μm to less than 15 μm is 100 to 7000 ppm in terms of oxides; and the Al content in the whole particle size region is 100 to 25000 ppm in terms of oxides. It is preferable that the (A)/(B) ratio of the Al content (A) in the particle size region of 15 μm to less than 70 μm to the Al content (B) in the particle size region of 3 μm to less than 15 μm be 1.0 to 20. | 03-31-2011 |
20110300384 | POWDER, METHOD FOR PRODUCING SAME, AND RESIN COMPOSITION CONTAINING SAME - Provided is a semiconductor sealing material in which the contamination rate of conductive foreign matter is extremely low. Further provided are powder comprising spherical silica powder and/or spherical alumina powder suitable for preparing such a semiconductor sealing material, a method for producing the same, and a resin composition. The powder comprises spherical silica powder and/or spherical alumina powder, and when a color reaction test for particles using an aqueous potassium ferricyanide solution under specific conditions is performed for magnetizable particles having a particle size of 45 [mu]m or more, the ratio of the number of particles which develop color to the total number of the magnetizable particles is 20% or less. Such powder can be produced by supplying a specific amount of oxygen gas and/or water vapor to at least one arbitrary site at which the atmospheric temperature is 1600 to 1800 DEG C. in a furnace at an angle of 60 DEG to 90 DEG with respect to the injection direction of a starting material of the powder, and setting the relative velocity of the starting material of the powder and/or the spherical powder to stainless steel and/or iron to 5 m/s or less. | 12-08-2011 |