Patent application number | Description | Published |
20110193171 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region. | 08-11-2011 |
20110204807 | TWO-WIRE AC SWITCH - A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch | 08-25-2011 |
20110215746 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention is a semiconductor device which includes: a semiconductor element; a gate drive circuit; and a connection terminal unit, wherein the semiconductor element includes: a gate electrode pad; and first and second ohmic electrode pads, the connection terminal includes: a first ohmic electrode terminal connected to the first ohmic electrode pad; a second ohmic electrode terminal connected to the second ohmic electrode pad; a gate drive terminal connected to the first ohmic electrode pad; and a gate terminal connected to the gate electrode pad, an input terminal of the gate drive circuit is connected to the gate drive terminal, an output terminal of the gate drive circuit is connected to the gate terminal, and a potential of the first ohmic electrode pad corresponds to a reference potential of the gate drive circuit. | 09-08-2011 |
20110284928 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer stack formed on a substrate, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor layer stack, and are spaced from each other, a first control layer formed between the first ohmic electrode and the second ohmic electrode, and a first gate electrode formed on the first control layer. The first control layer includes a lower layer, an intermediate layer which is formed on the lower layer, and has lower impurity concentration than the lower layer, and an upper layer which is formed on the intermediate layer, and has higher impurity concentration than the intermediate layer. | 11-24-2011 |
20120001200 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate. | 01-05-2012 |
20120061729 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride semiconductor device includes a semiconductor layer stack including a first nitride semiconductor layer and a second nitride semiconductor layer stacked in this order on a substrate. A p-type third nitride semiconductor layer is selectively formed on the semiconductor layer stack, and a gate electrode is formed on the third nitride semiconductor layer. A first ohmic electrode and a second ohmic electrode are formed on regions of the semiconductor layer stack located at both sides of the third nitride semiconductor layer, respectively. A first gate electrode forms a Schottky contact with the third nitride semiconductor layer. | 03-15-2012 |
20130009676 | BIDIRECTIONAL SWITCHING DEVICE AND BIDIRECTIONAL SWITCHING CIRCUIT USING THE SAME - A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode. | 01-10-2013 |
20130087858 | SEMICONDUCTOR DEVICE - A bidirectional switch includes a plurality of unit cells | 04-11-2013 |
20140097468 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer ( | 04-10-2014 |
20140103360 | SEMICONDUCTOR DEVICE - A semiconductor device having: a substrate; a nitride semiconductor layer including a first semiconductor layer made of GaN or In | 04-17-2014 |