Patent application number | Description | Published |
20080298419 | VERTICAL CAVITY SURFACE EMITTING LASER DEVICE - A vertical cavity surface emitting laser device includes a first reflective mirror layer, a second reflective mirror layer, and an active layer disposed therebetween, wherein at least one of the first reflective mirror layer and the second reflective mirror layer includes a periodic-refractive-index structure in which the refractive index periodically changes in the in-plane direction and a part of the periodic-refractive-index structure includes a plurality of parts that disorder the periodicity. | 12-04-2008 |
20110039364 | MANUFACTURING METHOD OF MICROSTRUCTURE - A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate. | 02-17-2011 |
20110134941 | TWO DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER - Provided is a two dimensional photonic crystal surface emitting laser which can suppress light leaking outside in an in-plane direction of the two dimensional photonic crystal and an absorption loss in an active layer caused by serving as an absorbing layer without contributing to light emission, and can improve light use efficiency. The surface emitting laser has a laminated structure in which an active layer and a photonic crystal layer are laminated in a vertical direction, has a resonance mode in an in-plane direction of the photonic crystal, and extracts light in a vertical direction to a surface of the photonic crystal, wherein the laminated structure has a multi-refractive index layer including a central region made of a high refractive index medium and a peripheral portion made of a low refractive index medium with a lower refractive index than that of the high refractive index medium. | 06-09-2011 |
20110134956 | PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the steps of forming a semiconductor layer containing a dopant; forming a concave and convex structure on the semiconductor layer by partially removing the semiconductor layer; and forming a conductivity distribution reflecting the concave and convex structure in the semiconductor layer by performing heat treatment on the semiconductor layer in which the concave and convex structure has been formed at a temperature at which a material forming the semiconductor layer causes mass transport and filling up a hole of a concave portion of the concave and convex structure with the material forming the semiconductor layer. | 06-09-2011 |
20110158280 | PHOTONIC CRYSTAL SURFACE EMITTING LASER - The present invention provides a photonic crystal surface emitting laser with which an arbitrary beam shape can be obtained and which enables design with a high degree of freedom. The surface emitting laser including a photonic crystal having a resonance mode in an in-plane direction parallel to a substrate includes a reflecting mirror for reflecting light emitted from the photonic crystal in a normal direction of the substrate and a spacer layer interposed between the reflecting mirror and the photonic crystal, wherein a nonuniform in-plane distribution is provided to the characteristics of one of the reflecting mirror and the spacer layer, so that a Q-value, which is a resonator characteristic in the normal direction of the substrate in the surface emitting laser, has a nonuniform in-plane distribution. | 06-30-2011 |
20110216796 | SURFACE EMITTING LASER - A surface emitting laser having a laminated structure has a first region and a second region. The first region is a region having at least one guided mode as a propagation mode in which light is propagated in the in-plane direction of a substrate at a laser oscillation wavelength. The second region is a region having a substrate radiation mode in which light is emitted to the side of the substrate at the laser oscillation wavelength. | 09-08-2011 |
20110237077 | METHOD OF PRODUCING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR AND PHOTONIC CRYSTAL PREPARED ACCORDING TO THE METHOD - The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor. | 09-29-2011 |
20120063480 | PHOTONIC-CRYSTAL SURFACE EMITTING LASER, LASER ARRAY USING THE LASER, AND IMAGE FORMING APPARATUS USING THE LASER ARRAY - A laser structure is provided in which an influence caused by a concave-convex structure on laser characteristics is reduced when the Epitaxial Lateral Overgrowth (ELO) technique is applied to a photonic-crystal surface emitting laser. A height of the mask structure is set such that a reflection peak wavelength of 0-th order diffracted light and a reflection peak wavelength of first-order diffracted light differ from each other for light that enters a concave-convex periodic structure, which is constituted by a first layer and a mask structure, from a photonic crystal. Further, reflection intensity of the 0-th order diffracted light from the concave-convex periodic structure is larger than reflection intensity of the first-order diffracted light from the concave-convex periodic structure at an oscillation wavelength λ. | 03-15-2012 |
20120063481 | PHOTONIC-CRYSTAL SURFACE EMITTING LASER, LASER ARRAY USING THE LASER, AND IMAGE FORMING APPARATUS USING THE LASER ARRAY - A laser structure is provided in which an influence caused by a concave-convex structure on laser characteristics is reduced when the Epitaxial Lateral Overgrowth (ELO) technique is applied to a photonic-crystal surface emitting laser. The laser structure includes a first layer, a second layer, a mask structure, a fourth layer, and a photonic crystal. An optical film thickness of the mask structure is not an integer multiple of a half of an oscillation wavelength λ, and reflectivity taken when laser light enters a multilayer structure including the first layer, the second layer, the mask structure, and the fourth layer from the fourth layer side is lower than reflectivity at an interface between the second layer and the first layer. | 03-15-2012 |
20120114006 | SURFACE EMITTING LASER - A surface emitting laser emitting a laser beam in a single transverse mode irrespective of an emission area while one-dimensionally aligning polarization of the output beam, including a two-dimensional photonic crystal, having resonance modes in directions of the primitive translation vector a | 05-10-2012 |
20120269224 | DISTRIBUTED FEEDBACK SURFACE EMITTING LASER - A photonic crystal surface emitting laser array reduces the occurrence of reflected feedback light while also reducing input of leaking light. The photonic crystal surface emitting laser array includes a plurality of first photonic crystal regions that cause laser oscillation, a second photonic crystal region that causes light diffraction to occur in an out-of-plane direction, and a light absorber that is provided above the second photonic crystal region and that absorbs light having a wavelength λ. A radiation coefficient of each first photonic crystal region is smaller than a radiation coefficient of the second photonic crystal region. | 10-25-2012 |
20130163628 | PROCESS FOR FORMING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR, SURFACE EMITTING LASER USING TWO-DIMENSIONAL PHOTONIC CRYSTAL AND PRODUCTION PROCESS THEREOF - A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole. | 06-27-2013 |
20130163630 | TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER - Provided is a two-dimensional photonic crystal surface emitting laser that enables easy laser oscillation with two-dimensionally symmetric intensity distribution, using a photonic crystal of a lattice structure having different lengths of primitive translation vectors in plane, realized in a two-dimensional photonic crystal surface emitting laser including an active layer, and a two-dimensional photonic crystal having a two-dimensionally periodic refractive index profile disposed in a vicinity of the active layer. The two-dimensional photonic crystal has a lattice structure where two primitive translation vectors in plane have different lengths, a shape of a member forming lattice points included in a unit cell of the lattice structure has anisotropy with respect to directions of the two primitive translation vectors, and the anisotropy of the shape of the member permits a difference of a coupling coefficient to be smaller than a case where the shape of the member is isotropic. | 06-27-2013 |
20140327015 | METHOD OF PRODUCING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR AND PHOTONIC CRYSTAL PREPARED ACCORDING TO THE METHOD - The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor. | 11-06-2014 |
20150049342 | SURFACE LIGHT-EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHIC IMAGING APPARATUS HAVING THE SAME - A surface light-emitting laser comprising an upper reflector, a lower reflector, and an active layer interposed therebetween, wherein when an optical distance between the upper reflector and the lower reflector is referred to as a first distance, and an optical distance between the lower reflector and the active layer is referred to as a second distance, positions of at least selected two of a group including the upper reflector, the lower reflector, and the active layer are changed so that the ratio between the first distance and the second distance is maintained within a range of ±25% from a certain value. | 02-19-2015 |
Patent application number | Description | Published |
20080259984 | STRUCTURE HAVING PHOTONIC CRYSTAL LAYER AND SURFACE EMITTING LASER INCLUDING THE SAME - A structure has a photonic crystal layer comprising a first member made of a material having a first refractive index; and a second member made of a material having a second refractive index, wherein the first member has a plurality of holes periodically arranged, and the second member is placed in each of the holes so that a center of the second member is staggered from a center of the hole on a plane of the photonic crystal layer. | 10-23-2008 |
20090074026 | STRUCTURE HAVING PHOTONIC CRYSTAL AND SURFACE-EMITTING LASER - In a structure having a two-dimensional photonic crystal in which structures having different refractive indices are disposed at a two-dimensional period and comprising a structure emitting in a direction perpendicular to a resonance direction of light propagating in the in-plane direction of the two-dimensional photonic crystal, wherein the structure comprises a one-dimensional photonic crystal in which components having different refractive indices are arranged at a one-dimensional period, and, the light propagating in the in-plane direction of the two-dimensional photonic crystal is reflected by a photonic band edge of the one-dimensional photonic crystal. | 03-19-2009 |
20090262775 | SURFACE EMITTING LASER - A surface emitting laser which oscillates at a wavelength X of a blue band, including a photonic crystal layer including a photonic crystal structure, an active layer provided on one surface of the photonic crystal layer, and an electrode provided on the other surface of the photonic crystal layer for injecting electric current into the active layer. The photonic crystal structure has a thickness of 100 nm or more. A laser beam is emitted toward a direction opposite to a side of the photonic crystal layer on which the electrode is provided. | 10-22-2009 |
20100142578 | SURFACE-EMITTING LASER INCLUDING TWO-DIMENSIONAL PHOTONIC CRYSTAL - A surface-emitting laser includes an active layer and a two-dimensional photonic crystal and has a resonance mode in an in-plane direction of the two-dimensional photonic crystal. The two-dimensional photonic crystal is composed of a semiconductor and dielectric material that has a refractive index different from that of the semiconductor and acts as the photonic crystal holes being arranged into a two-dimensional periodical structure. When the lattice constant of the two-dimensional photonic crystal is a and the radius of the dielectric material acting as the photonic crystal holes is r, r≧0.22a. The dielectric material has a refractive index that causes the coupling coefficient of the two-dimensional photonic crystal to exhibit an increasing tendency as the distance between the active layer and the two-dimensional photonic crystal shortens. | 06-10-2010 |
20100246625 | NITRIDE SEMICONDUCTOR LASER - A nitride semiconductor surface-emitting laser includes a two-dimensional photonic crystal layer having a resonant mode in an in-plane direction. The surface-emitting laser includes an active layer, the two-dimensional photonic crystal layer, a semiconductor layer, and an electrode in this order. The two-dimensional photonic crystal layer contains p-type conductive In | 09-30-2010 |