Patent application number | Description | Published |
20080275954 | COMMUNICATION METHOD - According to the present invention, the step of requesting of an associated information provision server KS for associated information about contents broadcast in a broadcast program being received is provided. The step of acquiring the associated information corresponding to the request from the associated information provision server KS and storing this is provided. And the retrieval step of transmitting a part of the associated information as a retrieval key to retrieve contents to a CD seller server | 11-06-2008 |
20090045438 | FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR - In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature. | 02-19-2009 |
20090173968 | Field Effect Transistor - A semiconductor device | 07-09-2009 |
20090230429 | Field effect transistor - A field effect transistor ( | 09-17-2009 |
20090230430 | Field effect transistor - A field effect transistor includes a layer structure made of compound semiconductor ( | 09-17-2009 |
20090267114 | FIELD EFFECT TRANSISTOR - A field effect transistor | 10-29-2009 |
20100057889 | COMMUNICATION METHOD, COMMUNICATION DEVICE, AND PROGRAM - To further correctly obtain related information about contents being received from a server. A communication apparatus | 03-04-2010 |
20100155779 | Field Effect Transistor - In a field effect transistor, a Group III nitride semiconductor layer structure containing a hetero junction, a source electrode | 06-24-2010 |
20100175095 | DATA-PROCESSING APPARATUS, DATA-PROCESSING METHOD AND DATA-PROCESSING PROGRAM - A data-processing method of receiving broadcast contents and content-related information related to the broadcast contents. The method includes setting a frequency for receiving the broadcast contents from the broadcast station, and recording frequency information corresponding to the set frequency. The method also includes transmitting request information including broadcast station ID identifying the broadcast station corresponding to the frequency information to a server. | 07-08-2010 |
20100224910 | FIELD EFFECT TRANSISTOR - Disclosed is an HJFET | 09-09-2010 |
20120217547 | FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT - Disclosed is an HJFET | 08-30-2012 |
20140367743 | FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR - In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature. | 12-18-2014 |