Patent application number | Description | Published |
20080225920 | SEMICONDUCTOR LASER DIODE APPARATUS AND METHOD OF FABRICATING THE SAME - A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base. | 09-18-2008 |
20080291958 | SEMICONDUCTOR LASER DEVICE - In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest. | 11-27-2008 |
20080317080 | SEMICONDUCTOR LASER DEVICE - In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest. | 12-25-2008 |
20090028204 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a substrate made of a nitride-based semiconductor and a waveguide formed on a principal surface of the substrate, wherein the substrate includes a dislocation concentrated region arranged so as to obliquely extend with respect to the principal surface of the substrate, and the waveguide is so formed as to be located above the dislocation concentrated region and also located on a region except a portion where the dislocation concentrated region is present in the principal surface of the substrate. | 01-29-2009 |
20090052489 | NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride-based semiconductor laser device includes a front facet located on a forward end of an optical waveguide and formed by a substantially (000-1) plane of a nitride-based semiconductor layer and a rear facet located on a rear end of the optical waveguide and formed by a substantially (0001) plane of the nitride-based semiconductor layer, wherein an intensity of a laser beam emitted from the front facet is rendered larger than an intensity of a laser beam emitted from the rear facet. | 02-26-2009 |
20100079359 | SEMICONDUCTOR LASER DEVICE AND DISPLAY - This semiconductor laser device includes a substrate, a blue semiconductor laser element, formed on the surface of a substrate, including a first active layer made of a nitride-based semiconductor and having a first major surface of a non-C plane and a green semiconductor laser element, formed on the surface of the substrate, including a second active layer made of a nitride-based semiconductor and having a second major surface of a surface orientation substantially identical to the non-C plane. | 04-01-2010 |
20100080001 | SEMICONDUCTOR LASER DEVICE AND DISPLAY - This semiconductor laser device includes a substrate, a green semiconductor laser element, formed on a surface of the substrate, including a first active layer having a first major surface of a semipolar plane and a blue semiconductor laser element, formed on a surface of the substrate, including a second active layer having a second major surface of a surface of the semipolar plane, while the first active layer includes a first well layer having a compressive strain and having a thickness of at least about 3 nm, and the second active layer includes a second well layer having a compressive strain. | 04-01-2010 |
20100111130 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlO | 05-06-2010 |
20100284433 | SEMICONDUCTOR LASER DEVICE AND DISPLAY - A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device ( | 11-11-2010 |
20100290498 | SEMICONDUCTOR LASER DEVICE AND DISPLAY - A semiconductor laser device capable of flexibly coping even with a case where a large output power difference is required between a plurality of laser elements having different lasing wavelengths when reproducing white light is obtained. This semiconductor laser device ( | 11-18-2010 |
20110188532 | Semiconductor Laser Apparatus - This semiconductor laser apparatus includes a first semiconductor laser device having a first surface and a second surface, an integrated laser device formed by a second semiconductor laser device and a third semiconductor laser device having a third surface and a fourth surface, and a support substrate. The third surface is bonded onto a first region of the support substrate, a first section of the first surface overlaps with at least part of the fourth surface, and a second section of the first surface is bonded to a second region of the support substrate. | 08-04-2011 |
20110281382 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A nitride-based semiconductor device includes a substrate constituted by nitride-based semiconductor, a nitride-based semiconductor layer formed on the substrate and constituted by nitride-based semiconductor, formed with a light waveguide extending in a first direction, and first step portions formed at least on regions other than the vicinity of facets of the light waveguide from a surface opposite to a side where the nitride-based semiconductor layer of the substrate is formed along the first direction in which the light waveguide extends. | 11-17-2011 |
20130070801 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlO | 03-21-2013 |