Patent application number | Description | Published |
20120161319 | BALL GRID ARRAY METHOD AND STRUCTURE - A process for making an integrated circuit, a wafer level integrated circuit package or an embedded wafer level package includes forming copper contact pads on a substrate or substructure. The substructure may include devices and the contact pads may be used for forming electrical couplings to the devices. For example, copper plating may be applied to a substructure and the copper plating etched to form copper contact pads on the substructure. An etching process may be applied to remove barrier layer material on the substructure, such as adjacent to the copper pads. For example, a hydrogen peroxide etch may be applied to remove titanium-tungsten from a surface of the substructure. The pads are again etched to remove barrier layer etchant, byproducts and/or oxide from the pads. Contamination control steps may be performed, such as quick-dump-and-rinse (QDR) and spin-rinse-and-dry (SRD) processing. | 06-28-2012 |
20120168942 | THROUGH HOLE VIA FILLING USING ELECTROLESS PLATING - An embedded wafer level ball grid array (eWLB) is formed by embedding a semiconductor die in a molding compound. A trench is formed in the molding compound with a laser drill. A first layer of copper is deposited on the sidewall of the trench by physical vapor deposition. A second layer of copper is then formed on the first layer of copper by an electroless process. A third layer of copper is then formed on the second layer by electroplating. | 07-05-2012 |
20120168944 | THROUGH HOLE VIA FILLING USING ELECTROLESS PLATING - An embedded wafer level ball grid array (eWLB) is formed by embedding a semiconductor die in a molding compound. A trench is formed in the molding compound with a laser drill. A first layer of copper is deposited on the sidewall of the trench by physical vapor deposition. A second layer of copper is then formed on the first layer of copper by an electroless process. A third layer of copper is then formed on the second layer by electroplating. | 07-05-2012 |
20120282767 | METHOD FOR PRODUCING A TWO-SIDED FAN-OUT WAFER LEVEL PACKAGE WITH ELECTRICALLY CONDUCTIVE INTERCONNECTS, AND A CORRESPONDING SEMICONDUCTOR PACKAGE - A semiconductor packaging process includes drilling apertures in a reconstituted wafer, then filling the apertures with conductive paste by wiping a quantity of the paste across a back surface of the wafer so that paste is forced into the apertures. The paste is cured to form conductive posts. The wafer is thinned, and redistribution layers are formed on front and back surfaces of the wafer, with the posts acting as interconnections between the redistribution layers. In an alternative process, blind apertures are drilled. A dry film resist is applied to the front surface of the wafer, and patterned to expose the apertures. Conductive paste is applied from the front. To prevent paste from trapping air pockets in the apertures, the wiping process is performed under vacuum. After curing the paste, the wafer is thinned to expose the cured paste in the apertures, and redistribution layers are formed. | 11-08-2012 |
20130105973 | EMBEDDED WAFER LEVEL PACKAGE FOR 3D AND PACKAGE-ON-PACKAGE APPLICATIONS, AND METHOD OF MANUFACTURE | 05-02-2013 |
20130105991 | EMBEDDED WAFER LEVEL PACKAGE FOR 3D AND PACKAGE-ON-PACKAGE APPLICATIONS, AND METHOD OF MANUFACTURE | 05-02-2013 |
20130170169 | CIRCUIT MODULE WITH MULTIPLE SUBMODULES - An embodiment of a circuit module includes module nodes, a first submodule, a second submodule, and a conductive structure. The first submodule has a first submodule node, and the second submodule is disposed over the first submodule and has a second submodule node. The conductive structure couples the first submodule node to one of the module nodes and couples the second submodule node to one of the module nodes. Another embodiment of a circuit module includes module nodes, a first submodule, a second submodule, and a conductive structure. The first submodule has first submodule nodes, and the second submodule is disposed over the first submodule and has second submodule nodes. The conductive structure couples one of the first and second submodule nodes to one of the module nodes and couples one of the first submodule nodes to one of the second submodule nodes. | 07-04-2013 |
20140113410 | SYSTEM IN PACKAGE MANUFACTURING METHOD USING WAFER-TO-WAFER BONDING - Embodiments of the present disclosure are related to manufacturing system-in-packages at wafer-level. In particular, various embodiments are directed to adhering a first wafer to a second wafer and adhering solder balls to contact pads of the first wafer. In one embodiment, a first wafer having first and second surfaces is provided. The first wafer includes bond pads located on the first surface that are coupled to a respective semiconductor device located in the first wafer. A second wafer having an electrical component located therein is provided. A conductive adhesive is provided on at least one of the first wafer and the second wafer. Conductive balls are provided on the bond pads on the first surface of the first wafer. The conductive balls and the conductive adhesive are heated to cause the conductive balls to adhere to the bond pad and the conductive adhesive to adhere the first wafer to the second wafer. | 04-24-2014 |
20140175649 | ELECTRONIC DEVICE INCLUDING ELECTRICALLY CONDUCTIVE VIAS HAVING DIFFERENT CROSS-SECTIONAL AREAS AND RELATED METHODS - An electronic device may include a bottom interconnect layer having a first electrically conductive via therein. The electronic device may also include an integrated circuit (IC) carried by said bottom interconnect layer, and an encapsulation material on the bottom interconnect layer and surrounding the IC. The encapsulation layer may have a second electrically conductive via therein aligned with the first electrically conductive via. The second electrically conductive via may have a cross-sectional area larger than a cross-sectional area of the first electrically conductive via. | 06-26-2014 |