Patent application number | Description | Published |
20110003254 | LAYOUT DECOMPOSITION METHOD APPLICABLE TO A DUAL-PATTERN LITHOGRAPHY - A layout decomposition method, applicable to a double pattern lithography, includes the steps of: putting at least a stitch on each of a plurality of sub-patterns of an initial layout pattern at preset intervals to thereby divide the each of the plurality of sub-patterns into a plurality of unit blocks each selectively labeled as a first region or a second region such that the first region and the second region in same said sub-pattern alternate, wherein any two neighboring ones of said unit blocks attributed to any two neighboring ones of said sub-patterns, respectively, are labeled as the first region and the second region, respectively; reducing the stitches of any two neighboring ones of said unit blocks attributed to any two neighboring ones of said sub-patterns, respectively, so as to generate a first layout pattern having a minimum number of stitches; and reducing the stitches of any two contiguous ones of said unit blocks of each of said sub-patterns in the first layout pattern, so as to generate a second layout pattern having a minimum number of stitches. | 01-06-2011 |
20110004858 | METHOD FOR CONCURRENT MIGRATION AND DECOMPOSITION OF INTEGRATED CIRCUIT LAYOUT - A method for concurrent migration and decomposition of an integrated circuit layout applicable to double patterning lithography techniques is provided. The method includes cutting a sub-pattern of an initial pattern to configure a potentially conflicting pattern having separate or cutting sections; removing odd cycles in the potential conflicting pattern so as to cut the separate or cutting sections; configuring the double patterning constraint based upon corresponding location relations between each and adjacent cut sections; and assigning a first color layer or a second color layer to the cut sections according to the double patterning constraint to obtain a final layout pattern. Therefore, disadvantageous factors and patterning conflicts caused by separate processes as encountered in the prior art are avoided. | 01-06-2011 |
20120110538 | CLOCK-TREE STRUCTURE AND METHOD FOR SYNTHESIZING THE SAME - A method for synthesizing a clock-tree structure may be applied to a physical design such as an integrated circuit or a printed circuit board to form a symmetrical clock-tree structure, while achieving the effects including minimizing a clock skew, having a process variation tolerance and increasing the synthesizing rate. To prevent a certain level from having too many branches and ensure that the clock-tree structure satisfies the fan-out constraint, a plurality of pseudo sinks are provided such that the result of factorizing the value of the number of the total sinks may satisfy the fan-out constraint. The levels in the clock-tree structure may have equal branch lengths by employing snaking routing, so as to achieve a symmetrical clock-tree structure design and reduce the clock skew of the clock-tree. | 05-03-2012 |
20120216167 | Routing Method for Flip Chip Package and Apparatus Using the Same - Disclosed herein are rouging methods and devices for a flip-chip package. The flip chip includes several outer pads and several inner pads. The routing method includes: setting an outer sequence based on the arrangement order of the outer pads; setting several inner sequences based on the connection relationships between inner pads and the outer pads; calculating the longest common subsequence of each inner sequence and the outer sequence, defining the connection relationships between the inner pads and the outer pads corresponding to the longest common subsequence as direct connections, and defining the connection relationships between the inner pads and the outer pads that do not correspond to the longest common subsequence as detour connections; establishing the routing scheme of the flip chip based on the connection relationships between the inner pads and the outer pads. | 08-23-2012 |
20130093048 | Deposited Material and Method of Formation - A system and method for manufacturing a semiconductor device is provided. An embodiment comprises forming a deposited layer using an atomic layer deposition (ALD) process. The ALD process may utilize a first precursor for a first time period, a first purge for a second time period longer than the first time period, a second precursor for a third time period longer than the first time period, and a second purge for a fourth time period longer than the third time period. | 04-18-2013 |
20140033156 | ROUTING METHOD FOR FLIP CHIP PACKAGE AND APPARATUS USING THE SAME - Disclosed herein are rouging methods and devices for a flip-chip package. The flip chip includes several outer pads and several inner pads. The routing method includes: setting an outer sequence based on the arrangement order of the outer pads; setting several inner sequences based on the connection relationships between inner pads and the outer pads; calculating the longest common subsequence of each inner sequence and the outer sequence, defining the connection relationships between the inner pads and the outer pads corresponding to the longest common subsequence as direct connections, and defining the connection relationships between the inner pads and the outer pads that do not correspond to the longest common subsequence as detour connections; establishing the routing scheme of the flip chip based on the connection relationships between the inner pads and the outer pads. | 01-30-2014 |
20140291745 | Deposited Material and Method of Formation - A system and method for manufacturing a semiconductor device is provided. An embodiment comprises forming a deposited layer using an atomic layer deposition (ALD) process. The ALD process may utilize a first precursor for a first time period, a first purge for a second time period longer than the first time period, a second precursor for a third time period longer than the first time period, and a second purge for a fourth time period longer than the third time period. | 10-02-2014 |
20150187864 | METAL-INSULATOR-METAL (MIM) CAPACITOR TECHNIQUES - Some embodiments relate to a metal-insulator-metal (MIM) capacitor. The MIM capacitor includes a capacitor bottom metal (CBM) electrode, a high-k dielectric layer arranged over the CBM electrode, and a capacitor top metal (CTM) electrode arranged over the high-k dielectric layer. A capping layer is arranged over the CTM electrode. A lower surface of the capping layer and an upper surface of the CTM electrode meet at an interface. Protective sidewalls are adjacent to outer sidewalls of the CTM electrode. The protective sidewalls have upper surfaces at least substantially aligned to the interface at which the upper surface of the CTM electrode meets the lower surface of the capping layer. | 07-02-2015 |