Patent application number | Description | Published |
20130214623 | SWITCHED RELUCTANCE MOTOR - Disclosed herein is a switched reluctance motor including: a salient pole type rotor provided with a plurality of salient poles; and a stator including a stator body provided with a plurality of salient poles facing the rotor and a plurality of auxiliary slots disposed between the salient poles, a plurality of phase windings formed by winding coils around the salient poles, and a plurality of electromagnets formed by winding coils in the auxiliary slots, wherein magnetic fluxes generated due to excitation of the phase windings interact with magnetic force generated from the electromagnets, such that a magnetic flux amount may increase and torque density may be improved, and an intersection line is not generated in the magnetic fluxes generated due to the excitation of the phase windings. | 08-22-2013 |
20130285498 | ROTOR OF BRUSHLESS DC MOTOR - Disclosed herein is a rotor of a brushless direct current motor including magnets, a core in which the magnets are accommodated, a rotating shaft inserted into the core, and a pair of cover members inserted into the rotating shaft to cover both ends of the core, respectively. | 10-31-2013 |
20140346903 | FAN MOTOR - Disclosed herein is a fan motor. In the fan motor according to the present invention which is an outer rotor type, a shaft having a fan fastened thereto is rotatably coupled to a bearing, the bearing is coupled to a bearing holder formed in a bracket, and the bracket is integrally configured of the bearing holder, a hub formed to be extended from the bearing holder to a perimeter, and a base formed to be extended from the hub to a perimeter, such that parts and assembling process may be effectively reduced. Meanwhile, the shaft is fastened with a stopper to prevent floating thereof, thereby improving driving stability and reliability. | 11-27-2014 |
Patent application number | Description | Published |
20100327337 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor memory device has an asymmetric buried gate structure with a stepped top surface and a method for fabricating the same. The method for fabricating the semiconductor memory device includes: etching a predetermined region of a semiconductor substrate to form an isolation layer defining an active region; forming a recess within the active region; forming a metal layer filling the recess; asymmetrically etching the metal layer to form an asymmetric gate having a stepped top surface at a predetermined portion of the recess; and forming a capping oxide layer filling a remaining portion of the recess where the asymmetric gate is not formed, thereby obtaining an asymmetric buried gate including the asymmetric gate and the capping oxide layer. | 12-30-2010 |
20110127587 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - The present invention relates to a semiconductor device, which includes a junction region formed in an active area of a semiconductor substrate; a trench defining a buried gate predetermined area within the semiconductor substrate; a gate electrode buried in an lower portion of the trench; an ion implantation region formed in a sidewall of the trench; and a capping insulation layer formed in an upper portion of the gate electrode. | 06-02-2011 |
20120119285 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed, which can form a gate electrode material only in a recess of a buried gate cell structure, improve a Gate Induced Drain Leakage (GIDL) of a gate electrode material and a junction (i.e., drain region), prevent the gate electrode material from overlapping with the junction (i.e., drain region), and adjust the depth of junction, thereby improving channel resistance. The method for manufacturing a semiconductor device includes forming a device isolation region defining an active region over a semiconductor substrate, burying a gate electrode material in the semiconductor substrate, forming a gate electrode pattern by etching the gate electrode material, wherein the gate electrode pattern is formed at sidewalls of the active region including a source region, and forming a capping layer in the exposed active region. | 05-17-2012 |
20130005130 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - The present invention relates to a semiconductor device, which includes a junction region formed in an active area of a semiconductor substrate; a trench defining a buried gate predetermined area within the semiconductor substrate; a gate electrode buried in an lower portion of the trench; an ion implantation region formed in a sidewall of the trench; and a capping insulation layer formed in an upper portion of the gate electrode. | 01-03-2013 |
20150200263 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed, which can form a gate electrode material only in a recess of a buried gate cell structure, improve a Gate Induced Drain Leakage (GIDL) of a gate electrode material and a junction (i.e., drain region), prevent the gate electrode material from overlapping with the junction (i.e., drain region), and adjust the depth of junction, thereby improving channel resistance. The method for manufacturing a semiconductor device includes forming a device isolation region defining an active region over a semiconductor substrate, burying a gate electrode material in the semiconductor substrate, forming a gate electrode pattern by etching the gate electrode material, wherein the gate electrode pattern is formed at sidewalls of the active region including a source region, and forming a capping layer in the exposed active region. | 07-16-2015 |
Patent application number | Description | Published |
20140042847 | SPINDLE MOTOR - A spindle motor includes a sleeve fixed to a base member, a shaft rotatably inserted into a shaft hole of the sleeve, and a rotor hub fixed to an upper end of the shaft. A protrusion having a corresponding inclined surface that defines a bearing clearance together with an outer circumferential surface of the sleeve is disposed on an inner diameter part of the rotor hub. | 02-13-2014 |
20140044383 | SPINDLE MOTOR - A spindle motor includes a sleeve fixed to a base member, the sleeve having a circulation hole, a shaft rotatably inserted into a shaft hole of the sleeve, a rotor hub fixed to an upper end of the shaft, and a thrust member disposed in an installation groove of the sleeve, the thrust member defining a connection part connected to the circulation hole when the thrust member is disposed in the installation groove. The connection part connects a sealing part in which a gas-liquid interface defined by the sleeve and the rotor hub is disposed in the circulation hole. | 02-13-2014 |
20140152133 | SPINDLE MOTOR - There is provided a spindle motor, including: a sleeve fixed to a base member; a shaft rotatably inserted into the sleeve; and a rotor hub fixed to a top end portion of the shaft to be rotated together therewith and provided with an extension wall to form a liquid-vapor interface together with an outer circumferential surface of the sleeve, wherein the extension wall is provided with a protrusion portion protruded in an inner radial direction so as to reduce leakage of a lubricating fluid. | 06-05-2014 |
20140285924 | SPINDLE MOTOR AND RECORDING DISK DRIVING DEVICE INCLUDING THE SAME - There is provided a spindle motor including: a sleeve fixedly installed on the base member and having a circulation hole formed therein; a shaft rotatably inserted into a shaft hole of the sleeve; a rotor hub fixedly installed on an upper end portion of the shaft; and a thrust member installed in an installation groove of the sleeve and forming a connection part while being installed in the installation groove, the connection part being connected to the circulation hole, wherein the connection part is formed by the sleeve and the rotor hub and connects a sealing part in which a liquid-vapor interface is disposed and the circulation hole to each other, and an upper and lower radial dynamic grooves allowing a lubricating fluid to move from a lower end portion of the shaft toward the upper end portion thereof during rotation of the shaft. | 09-25-2014 |
Patent application number | Description | Published |
20090148609 | METHOD OF MANUFACTURING MAGNESIUM OXIDE NANOPARTICLES AND METHOD OF MANUFACTURING MAGNESIUM OXIDE NANOSOL - Disclosed are a method of manufacturing magnesium oxide nanoparticles and a method of manufacturing a magnesium oxide nanosol, which can prepare magnesium oxide particles having a size of tens of nanometers with high yield by using a simple, low-cost process. The methods of manufacturing magnesium oxide nanoparticles and manufacturing magnesium oxide nanosol include preparing a magnesium salt solution by dissolving a magnesium salt in a solvent; impregnating an organic polymer comprising a nanosized pore with the magnesium salt solution; and heating the organic polymer impregnated with the magnesium salt solution until the organic polymer is fired. | 06-11-2009 |
20090170961 | METHOD OF MANUFACTURING DYSPROSIUM OXIDE NANOPARTICLES AND METHOD OF MANUFACTURING DYSPROSIUM OXIDE NANOSOL - Disclosed are a method of manufacturing dysprosium oxide nanoparticles and a method of manufacturing a dysprosium oxide nanosol, which can prepare dysprosium oxide particles having a size of tens of nanometers with high yield by using a simple, low-cost process. The method of manufacturing dysprosium oxide nanoparticles includes preparing a dysprosium salt solution by dissolving a dysprosium salt in a solvent; impregnating an organic polymer comprising a nanosized pore with the dysprosium salt solution; and heating the organic polymer impregnated with the dysprosium salt solution until the organic polymer is fired. | 07-02-2009 |
20100035062 | MANUFACTURING METHODS OF MAGNESIUM-VANADIUM COMPOSITE OXIDE NANOPARTICLE AND MAGNESIUM-VANADIUM COMPOSITE OXIDE NANOPARTICLE MANUFACTURED BY THE SAME - Provided are manufacturing methods of a magnesium-vanadium composite oxide nanoparticle that make it possible to manufacture a composite oxide of several tens of nanometers in size containing two kinds of metals, and also to accurately design and manufacture a product material having a desired ratio between the metals, and a magnesium-vanadium composite oxide nanoparticle manufactured by the manufacturing methods. In the manufacturing method, a solution containing a magnesium salt and a vanadium salt is prepared. An organic polymer having nano-sized pores is dipped in the prepared solution, and is then heated until the organic polymer is calcined, thereby manufacturing a magnesium-vanadium composite oxide nanoparticle. | 02-11-2010 |
20100157508 | METHOD OF MANUFACTURING COMPLEX OXIDE NANO PARTICLES AND COMPLEX OXIDE NANO PARTICLES MANUFACTURED BY THE SAME - A method of manufacturing complex oxide nano particles includes preparing a mixed solution including at least one metal salt selected from the group consisting of aluminum salt, manganese salt and barium salt, impregnating an organic polymer having nano-sized pores with the mixed solution, and calcining the organic polymer impregnated with the mixed solution. Accordingly, complex oxides with particle sizes on the nanoscale can be prepared, and the kind and composition ratio of metal elements contained in the complex oxides can be facilitated. Also, a multilayer ceramic capacitor including the complex metal oxides manufactured by this method can ensure a super slim profile and high capacity. | 06-24-2010 |
20150029623 | COMMON MODE FILTER - Disclosed herein is a common mode filter, including: first and second coil layers electromagnetically coupled to each other; a pair of external terminals connected to ends of the first coil layer and a pair of external terminals connected to ends of the second coil layer; a first ESD prevention member connecting between the pair of external terminals carrying electric current with the first coil layer and a second ESD prevention member connecting between the pair of external terminals carrying electric current with the second coil layer; and a ground electrode connecting the first ESD prevention member to the second ESD prevention member, wherein the ground electrode has a stepped portion formed at the center. | 01-29-2015 |
20150303893 | COMMON MODE FILTER AND METHOD FOR MANUFACTURING THE SAME - The present invention discloses a common mode filter and a method for manufacturing the common mode filter. The common mode filter in accordance with an embodiment of the present invention includes: a magnetic substrate; a first coil electrode formed on the magnetic substrate; a first lead electrode formed on the magnetic substrate; a first dielectric layer formed on the magnetic substrate; a height compensation electrode formed on the upper surface of the first lead electrode; a second coil electrode formed on the first dielectric layer; a second lead electrode formed on the first dielectric layer; a second dielectric layer formed on the first dielectric layer; and an external electrode formed on the second dielectric layer. | 10-22-2015 |
20150325363 | COMMON MODE FILTER AND MANUFACTURING METHOD THEREOF - A common mode filter and a manufacturing method thereof are disclosed. A common mode filter in accordance with an aspect of the present invention includes: a substrate: a filter layer disposed on the substrate and configured to remove a signal noise; an electrode column formed to be bent along a perimetric portion of the filter layer and electrically connected with the filter layer; an electrode pad formed to have a larger longitudinal cross-sectional area than the electrode column and integrally coupled on the electrode column; and a magnetic layer formed on a layer on which the electrode column and the electrode pad are formed. | 11-12-2015 |
Patent application number | Description | Published |
20090137075 | Method of manufacturing vertical light emitting diode - Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures. | 05-28-2009 |
20100090247 | SURFACE TREATMENT METHOD OF GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SEMICONDUCTOR, MANUFACTURING METHOD OF THE SAME AND GROUP III NITRIDE SEMICONDUCTOR STRUCTURE - There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity. | 04-15-2010 |
20100099212 | METHOD OF FORMING PATTERN ON GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask. | 04-22-2010 |
20110008924 | METHOD OF FORMING PATTERN ON GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask. | 01-13-2011 |
20120007120 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate. | 01-12-2012 |
20120086016 | GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR STRUCTURE - There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity. | 04-12-2012 |
20130020554 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. | 01-24-2013 |
20130020598 | LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF - A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively. | 01-24-2013 |
20140048838 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes. | 02-20-2014 |
20150060925 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate. | 03-05-2015 |
20150340549 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes. | 11-26-2015 |
Patent application number | Description | Published |
20110025794 | Inkjet head and inkjet head assembly - There is provided an inkjet head including an inkjet head plate slantedly coupled to a cartridge supplying ink; a nozzle ejecting ink moving through a path formed inside the inkjet head plate, and formed at a flattened edge of the inkjet head plate contacting a printing medium; and an actuator provided on a surface of the inkjet head plate opposite to that coupled to the cartridge and controlling the ejection of the ink. | 02-03-2011 |
20110032309 | Inkjet head, method of manufacturing the same, and electrical connection device therefor - An inkjet head according to an aspect of the invention may include: an inkjet head body having an ink chamber provided therein and an electrode portion provided on a surface thereof adjacent to the ink chamber; a piezoelectric actuator being mounted on the surface of the inkjet head body so that the piezoelectric actuator is electrically connected to the electrode portion; and a substrate being pressed using a bonding tool so that the substrate is electrically connected to the electrode portion and the piezoelectric actuator, arranged in different planes, through a conductive adhesive. | 02-10-2011 |
20110057995 | Inkjet head and inkjet head assembly having the same - There is provided an inkjet head and an inkjet head assembly having the same. The inkjet head includes an inkjet head plate having a plurality of nozzles ejecting ink provided therein; pressure chambers storing ink drawn in from both outer ends of the inkjet head plate in a width direction thereof and facing each other in a direction inwards of the width direction; piezoelectric elements supplying the pressure champers with driving force allowing ink to be ejected through the nozzles connected to the pressure chambers and disposed on the pressure chambers having membranes interposed therebetween; a pressure adjusting channel connecting the pressure chambers to adjust a pressure of ink ejected through the nozzles. | 03-10-2011 |
20110109702 | Inkjet head - There is provided an inkjet head. An inkjet head according to an aspect of the invention may include: a body having a nozzle in an outer surface thereof; a reservoir provided within the body and containing ink being externally injected; an ink chamber receiving the ink from the reservoir through a restrictor and ejecting the ink to an outside through the nozzle; and a reservoir actuator mounted on the body at a position corresponding to the reservoir and transmitting vibrations to the reservoir. | 05-12-2011 |
20110134182 | INKJET HEAD PACKAGE - There is provided an inkjet head package including: an ink head having an actuator mounted thereon and ejecting ink to the outside by a driving force of the actuator; an intermediate substrate disposed between the ink head and an ink storage supplying ink to the ink head, and having a socket provided on a surface thereof; and a lead frame provided on an upper surface of the ink head such that the intermediate substrate and the actuator are electrically connected to each other. | 06-09-2011 |
20110134196 | Inkjet head - There is provided an inkjet head including: a flow path plate having a plurality of ink chambers; a nozzle plate having a plurality of nozzles connected to the respective ink chambers in order to eject ink in the ink chambers to the outside; a piezoelectric actuator provided above the ink chambers and controlling pressure of the ink chambers; and a parylene protective film provided in order to prevent oxidization of the piezoelectric actuator. | 06-09-2011 |
20110162181 | Device for polling piezoelectric element and polling method using the same - A device for polling a piezoelectric element includes: a polling chamber in which a plurality of piezoelectric elements are disposed; a power supply unit providing voltage to poll the piezoelectric elements; a capacitance measurement unit connected with the piezoelectric elements to measure the capacitance of the piezoelectric elements; and a switching system connected with the power supply unit and the piezoelectric elements within the polling chamber, and selectively providing the voltage of the power supply unit to the piezoelectric elements. | 07-07-2011 |
20110169895 | Inkjet print head, wafer level package and method of manufacturing the same - There is provided an inkjet print head including an ink head and a chipping prevention portion. The ink head includes a nozzle for ejecting ink to the outside by a driving force of a piezoelectric actuator mounted on a surface of the ink head. The chipping prevention portion includes a cutting portion disposed at a side of the ink head and being cut so as to have a height lower than that of the nozzle. | 07-14-2011 |
20110181668 | Inkjet print head and manufacturing method thereof - There is provided an inkjet print head including: a body portion including a nozzle ejecting ink, an ink chamber connected to the nozzle so as to supply the ink to the nozzle, and a vibration plate transferring vibrations to the ink chamber and formed of an elastomer; an actuator mounted on the body portion in order to be arranged to correspond to the ink chamber and generating the vibrations transferred to the ink chamber; and a buffer layer allowing for an electrical connection with the actuator and having a Young's modulus greater than that of the body portion. | 07-28-2011 |
20110193915 | Piezoelectric actuator, inkjet head including the same, and method of manufacturing piezoelectric actuator - A piezoelectric actuator according to an aspect of the invention may include: upper and lower electrodes supplying a driving voltage; and a piezoelectric material formed by solidifying a piezoelectric liquid having viscosity between the upper and lower electrodes and providing a driving force to ink inside an ink chamber of an inkjet head. | 08-11-2011 |
20110205313 | Inkjet print head and method of manufacturing the same - There is provided an inkjet print head including: a pressure chamber storing ink in order to eject the ink to a nozzle; a piezoelectric actuator receiving part being recessed in order to correspond to the pressure chamber in a direction of the pressure chamber; and a piezoelectric actuator received in the piezoelectric actuator receiving part, in which viscous liquid having piezoelectric properties is filled and hardened, and supplying the pressure chamber with a driving force for ejection of the ink. | 08-25-2011 |
20120024088 | Dissolution properties measurement system using piezoelectric sensor - There is provided a dissolution properties measurement system using a piezoelectric sensor, capable of continuously measuring dissolution properties of a substrate in an aqueous solution by using the piezoelectric sensor. The dissolution properties measurement system includes: a specimen receiving unit including a chamber receiving a specimen therein; a mass measuring unit connected with the specimen to measure a mass change of the specimen in real time; and a dissolution properties measuring unit measuring a dissolution properties of the specimen on the basis of the value measured by the mass measuring unit. | 02-02-2012 |
20120024573 | Printed circuit board and manufacturing method thereof - There are provided a printed circuit board and a manufacturing method thereof. The manufacturing method of a printed circuit board includes: preparing a substrate having active regions and non-active regions, the non-active regions being formed on edges thereof; printing resists on dummy portions corresponding to the non-active regions of the substrate by using an inkjet printing method; curing the resists; and performing plating on the active regions of the substrate. The resists are masked on the dummy portions corresponding to the non-active regions of the substrate to prevent plating from being performed on the dummy portions, thereby reducing manufacturing costs. | 02-02-2012 |
20120113181 | Resist ink printing device - There is provided a resist ink printing device according to an exemplary embodiment of the present invention including: a transfer unit transferring a substrate on which lead-in wires for electrolytic gold plating are patterned into a main body; a controller formed on the main body to measure a warpage degree of the substrate and recognizing a gerber file stored with circuit diagram information of the substrate to compensate for the warpage degree of the substrate and correct the gerber file; and at least one inkjet printing head part discharging liquid photo resist ink to the lead-in wires by the corrected gerber file. | 05-10-2012 |
20120169447 | NANOCOMPOSITE POWDER FOR INNER ELECTRODE OF MULTILAYER CERAMIC ELECTRONIC DEVICE AND FABRICATING METHOD THEREOF - There are disclosed a nanocomposite powder for an inner electrode of a multilayer ceramic electronic device and a manufacturing method thereof. The nanocomposite powder for an inner electrode of a multilayer ceramic electronic device includes a first metal particle having electrical conductivity, and a second metal coating layer formed on a top surface or a bottom surface of the first metal particle and having a higher melting point than that of the first metal particle. | 07-05-2012 |
20130118541 | THERMOELECTRIC MODULE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are a thermoelectric module and a method of manufacturing the same. The thermoelectric module includes: a thermoelectric laminate in which a plurality of N-type thermoelectric sheets made of an N-type thermoelectric material and a plurality of P-type thermoelectric sheets made of a P-type thermoelectric material are alternately disposed in a vertical direction and each of insulating sheets is provided between the N-type thermoelectric sheets and the P-type thermoelectric sheets; metal electrodes provided on left and right ends of the thermoelectric laminate; and substrates provided on outer side surfaces of the metal electrodes. | 05-16-2013 |
20130265131 | ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to an electronic component having a primary coil pattern and a secondary coil pattern with at least one selected from a dielectric and an insulator interposed therebetween, which includes at least one discharge terminal for discharging overvoltage or overcurrent applied to the primary coil pattern or the secondary coil pattern, and a method for manufacturing the same. Since it is possible to efficiently discharge overvoltage or overcurrent applied to an electronic component, it is possible to improve reliability of various electronic devices to which the electronic component in accordance with an embodiment of the present invention is applied as well as to extend lifespan of the electronic component itself. | 10-10-2013 |
20130320492 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - Disclosed herein is a substrate including: a base substrate; an insulating layer formed on an upper portion of the base substrate; a circuit layer formed in a form in which it is buried in the insulating layer; at least one electrode formed on upper portions of the circuit layer and the insulating layer and having a prominence and depression formed at a side thereof; and a dielectric layer formed in a form in which it surrounds the side of the electrode. | 12-05-2013 |
20150029623 | COMMON MODE FILTER - Disclosed herein is a common mode filter, including: first and second coil layers electromagnetically coupled to each other; a pair of external terminals connected to ends of the first coil layer and a pair of external terminals connected to ends of the second coil layer; a first ESD prevention member connecting between the pair of external terminals carrying electric current with the first coil layer and a second ESD prevention member connecting between the pair of external terminals carrying electric current with the second coil layer; and a ground electrode connecting the first ESD prevention member to the second ESD prevention member, wherein the ground electrode has a stepped portion formed at the center. | 01-29-2015 |
20150102884 | COMMON MODE FILTER - A common mode filter is disclosed. The common mode filter in accordance with an embodiment of the present invention includes: a magnetic substrate; a dielectric layer laminated on the magnetic substrate; an external electrode formed on the dielectric layer in such a way that one surface thereof is exposed to an outside; a conductive pattern formed on a surface of the dielectric layer so as to be located on a same plane as the external electrode and having one end thereof connected with the external electrode; an insulator film formed on a surface of the conductive pattern; and a magnetic layer formed on the insulator film so as to cover an upper surface and a lateral surface of the conductive pattern. | 04-16-2015 |
20150102886 | COMMON MODE FILTER - A common mode filter is disclosed. The common mode filter in accordance with an embodiment of the present invention includes: a magnetic substrate; a coil pattern formed on the magnetic substrate; a dielectric layer formed on the magnetic substrate so as to cover an upper part, a lower part and a side surface of the coil pattern; and a first coupling agent interposed between the magnetic substrate and the dielectric layer so as to prevent the magnetic substrate and the dielectric layer from being separated. | 04-16-2015 |
20150130580 | COMMON MODE FILTER AND MANUFACTURING METHOD THEREOF - A common mode filter and a manufacturing method thereof are disclosed. The common mode filter in accordance with an embodiment of the present invention includes: a magnetic substrate; a coil layer formed on the magnetic substrate and including a coil pattern; a magnetic layer formed on the coil layer; a resin layer formed on the magnetic layer; and an external electrode formed in the resin layer so as to be electrically connected with the coil pattern. | 05-14-2015 |
Patent application number | Description | Published |
20090322241 | AC DRIVEN LIGHT EMITTING DEVICE - An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC. | 12-31-2009 |
20090322248 | LED DRIVING CIRCUIT AND LIGHT EMITTING DIODE ARRAY DEVICE - There is provided an LED driving circuit. The LED driving circuit according to an aspect of the invention may include: at least one ladder circuit including: (n−1) number (here, n is a positive integer satisfying n≧2) of first branches provided between first and second junction points, and connected in-line with each other by n number of first middle junction points, (n−1) number of second branches arranged in parallel with the first branches, and connected in-line with each other by n number of second middle junction points between the first and second junction points, and n number of middle branches connecting m-th first and second middle junction points to each other, wherein at least one LED device is disposed on each of the first, second, and middle branches. Here, the number of LED devices included in each of the first and second branches is greater than the number of LED devices included in each of the middle branches. | 12-31-2009 |
20110278538 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions. | 11-17-2011 |
20120007499 | AC DRIVEN LIGHT EMITTING DEVICE - An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC. | 01-12-2012 |
20120061641 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof. | 03-15-2012 |
20120068153 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer. | 03-22-2012 |
20120235584 | AC DRIVEN LIGHT EMITTING DEVICE - An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC. | 09-20-2012 |
20130252363 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer. | 09-26-2013 |
20140217361 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE - There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof. | 08-07-2014 |
Patent application number | Description | Published |
20080286904 | Method for manufacturing semiconductor package - Provided is a method for manufacturing a semiconductor package. In the method, a wafer for a cap substrate is provided. The wafer for the cap substrate includes a plurality of vias and via electrodes on a lower surface. A wafer for a device substrate is provided. The wafer for the device substrate includes a circuit unit and a connection electrode on an upper surface. The wafer for the cap substrate and the wafer for the device substrate are primarily bonded by a medium of a primary adhesive. A trench is formed to expose the upper surface of the wafer for the device substrate to an outside along an outer edge of the primary adhesive. A secondary bonding operation is performed by a medium of a secondary adhesive to electrically connect the via electrode and the connection electrode. The wafer for the device substrate is diced along a virtual cut line. | 11-20-2008 |
20080299706 | Wafer level package fabrication method - Provided is a wafer level package fabrication method. The method includes providing a device substrate wafer including one or more devices on an upper surface thereof, and a bonding pad electrically connected to the device, providing a bonding seal surrounding the device along the bonding pad, bonding a cap substrate wafer to the device substrate wafer through the bonding seal, the cap substrate wafer having a via formed in a region corresponding to the bonding pad, forming an external terminal on the cap substrate wafer, the external terminal being electrically connected to the bonding pad, and cutting the cap substrate wafer and the device substrate wafer along a cutting line to individually separate a plurality of wafer level packages. The method is conducive to reducing product size for miniaturization, is capable of performing a bonding process without wafer deformation or damage, and increases freedom in wafer material selection. | 12-04-2008 |
20090085134 | Wafer-level image sensor module, method of manufacturing the same, and camera module - Provided is a wafer-level image sensor module including a wafer; an image sensor mounted on the wafer; a transparent member installed above the top surface of the wafer so as to seal the image sensor; a plurality of vias formed in the wafer so as to be positioned outside the transparent member; a plurality of upper pads formed on the upper ends of the respective vias; an encapsulation portion formed on the top surface of the wafer so as to be positioned outside the transparent member; and a plurality of external connection members that are electrically connected to the lower ends of the respective vias. | 04-02-2009 |
20110012220 | Wafer-level image sensor module, method of manufacturing the same and camera module - A wafer-level image sensor module including: a wafer having an image sensor and a plurality of upper pads provided thereon, the wafer having an inclined surface on either side thereof; a transparent member installed above the top surface of the wafer so as to seal the image sensor; a plurality of lead portions having one ends connected to the respective upper pads, the lead portions being formed to extend to the bottom surface of the wafer along the inclined surface of the wafer; an encapsulation portion formed on the top surface of the wafer so as to be positioned outside the transparent member; and a plurality of external connection members that are electrically connected to the other ends of the respective lead portions | 01-20-2011 |
20140029201 | POWER PACKAGE MODULE AND MANUFACTURING METHOD THEREOF - There is provided a power package module, including: a lead frame; at least one first electronic component mounted on the lead frame; and an insulating member disposed on a first surface of the first electronic component and having a via electrode connected to the first electronic component. | 01-30-2014 |
20140035157 | SEMICONDUCTOR PACKAGE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR PACKAGE MANUFACTURING MOLD - There is provided a semiconductor package including: at least one internal lead having at least one electronic component mounted on a surface thereof; a molding unit sealing the electronic component and the internal lead; at least one external lead extending from the internal lead and protruding outwardly from ends of the molding unit; and a stopper provided on the external lead. | 02-06-2014 |
20140110833 | POWER MODULE PACKAGE - Disclosed herein is a power module package. The power module package includes a substrate having one surface formed with a circuit pattern including a chip mounting pad and an external connection pad and the other surface; a semiconductor chip mounted on the chip mounting pad; and an external connection terminal having one terminal and the other terminal, the one terminal being connected to the external connection pad and the other terminal protruding to the outside, in which the external connection pad and the external connection terminal are bonded to each other by welding. | 04-24-2014 |
20140118956 | ALL-IN-ONE POWER SEMICONDUCTOR MODULE - Disclosed herein is an all-in-one power semiconductor module including a plurality of first semiconductor devices formed on a substrate; a housing molded and formed to include bridges formed across upper portions of the plurality of first semiconductor devices; and a plurality of lead members integrally formed with the housing and electrically connecting the plurality of first semiconductor devices and the substrate. | 05-01-2014 |
20140183717 | SEMICONDUCTOR MODULE PACKAGE - Disclosed herein is a semiconductor module package, including: a first module including a first heat radiation substrate and one or more first semiconductor elements and having a first N terminal and a first P terminal formed at one end thereof; a second module including a second heat radiation substrate and one or more second semiconductor elements, having a second N terminal and a second P terminal formed at one end thereof, and disposed so as to face the first module; and a first output terminal formed by electrically connecting the first module to the second module. | 07-03-2014 |