| Patent application number | Description | Published |
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| 20100155686 | MEMRISTIVE DEVICE - A memristive device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least one of the first and second electrodes is a metal oxide electrode. | 06-24-2010 |
| 20100264397 | MEMRISTIVE DEVICE WITH A BI-METALLIC ELECTRODE - A memristive device having a bimetallic electrode includes a memristive matrix, a first electrode and a second electrode. The first electrode is in electrical contact with the memristive matrix and the second electrode is in electrical contact with the memristive matrix and an underlying layer. At least one of the first and second electrodes is a bimetallic electrode which includes a conducting layer and a metallic layer. | 10-21-2010 |
| 20110024710 | MEMRISTOR WITH A NON-PLANAR SUBSTRATE - A memristor includes a substrate having a plurality of protrusions, wherein each of the plurality of protrusions extends in a first direction, a first electrode provided over at least one of the plurality of protrusions, wherein the first electrode conforms to the shape of the at least one protrusion such that the first electrode has a crest, a switching material positioned upon the first electrode; and a second electrode positioned upon the switching material such that a portion of the second electrode is substantially in line with the crest of the first electrode along the first direction, wherein an active region in the switching material is operable to be formed between the crest of the first electrode and the portion of the second electrode that is substantially in line with the crest of the first electrode. | 02-03-2011 |
| 20110024716 | MEMRISTOR HAVING A NANOSTRUCTURE IN THE SWITCHING MATERIAL - A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode. | 02-03-2011 |
| 20110073828 | MEMRISTOR AMORPHOUS METAL ALLOY ELECTRODES - A nanoscale switching device comprises at least two electrodes, each of a nanoscale width; and an active region disposed between and in electrical contact with the electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field, wherein at least one of the electrodes comprises an amorphous conductive material. | 03-31-2011 |
| 20110121359 | Multi-Layer Reconfigurable Switches - Embodiments of the present invention are directed to reconfigurable two-terminal electronic switch devices ( | 05-26-2011 |
| 20110122405 | GUIDED MODE RESONATOR BASED RAMAN ENHANCEMENT APPARATUS - A system for performing Raman spectroscopy comprises a waveguide layer configured with at least one array of features, the at least one array of features being configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation; and at least one fluid channel disposed in the waveguide layer. An analyte sensor comprises an electromagnetic radiation source configured to emit a range of wavelengths of electromagnetic radiation, the system for performing Raman spectroscopy, and at least one photodetector configured to detect Raman scattered light. | 05-26-2011 |
| 20110186801 | Nanoscale Switching Device - A nanoscale switching device has an active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical held. The switching device has first, second and third electrodes with nanoscale widths. The active region is disposed between the first and second electrodes. A resistance modifier layer, which has a non-linear voltage-dependent resistance, is disposed between the second and third electrodes. | 08-04-2011 |
| 20110221027 | Using Alloy Electrodes to Dope Memristors - Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode ( | 09-15-2011 |
| 20110227031 | Memristor Devices Configured to Control Bubble Formation - Various embodiments of the present invention are direct to nanoscale, reconfigurable, two-terminal memristor devices. In one aspect, a device ( | 09-22-2011 |
| 20110240951 | MEMRISTIVE DEVICE - A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode. | 10-06-2011 |
| 20110240952 | PROGRAMMABLE CROSSPOINT DEVICE WITH AN INTEGRAL DIODE - A programmable crosspoint device with an integral diode includes a first crossbar, a second crossbar, a metallic interlayer, and a switching oxide layer interposed between the first crossbar and the metallic interlayer. The switching oxide layer has a low resistance state and high resistance state. The programmable crosspoint device also includes an integral diode which is interposed between the second crossbar layer and the metallic interlayer, the integral diode being configured to limit the flow of leakage current through the programmable crosspoint device in one direction. A method for forming a programmable crosspoint device with an integrated diode is also provided. | 10-06-2011 |
| 20110260134 | Thermally Stable Nanoscale Switching Device - A nanoscale switching device provides enhanced thermal stability and endurance to switching cycles. The switching device has an active region disposed between electrodes and containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. At least one of the electrodes is formed of conductive material having a melting point greater than 1800° C. | 10-27-2011 |
| 20110260135 | Method for Doping an Electrically Actuated Device - An electrically actuated device ( | 10-27-2011 |
| 20110266510 | Controlled Placement of Dopants in Memristor Active Regions - Various embodiments of the present invention are direct to nanoscale, reconfigurable memristor devices. In one aspect, a memristor device ( | 11-03-2011 |
| 20110266513 | Superconductor Memristor Devices - Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device ( | 11-03-2011 |
| 20110266515 | MEMRISTIVE SWITCH DEVICE - A memristive switch device can comprise a switch formed between a first electrode and a second electrode, where the switch includes a memristive layer and a select layer directly adjacent the memristive layer. The select layer blocks current to the memristive layer over a symmetric bipolar range of subthreshold voltages applied between the first and second electrodes. | 11-03-2011 |
| 20110267870 | Decoders Using Memristive Switches - A decoding structure employs a main terminal ( | 11-03-2011 |
| 20110309321 | MEMRISTORS WITH A SWITCHING LAYER COMPRISING A COMPOSITE OF MULTIPLE PHASES - A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed. | 12-22-2011 |
| 20120001017 | INSTALLATION PLATFORM FOR DEPLOYING AN EARTH-BASED SENSOR NETWORK UTILIZING A PROJECTED PATTERN FROM A HEIGHT - An installation platform for deploying an earth-based sensor network utilizing a projected pattern from a height. The installation platform includes an aerostatic aircraft, at least one sensor-location projector, and a projector stabilizer. The sensor-location projector is coupled with the aerostatic aircraft, and is configurable to project the projected pattern including at least one sensor-location marker associated with a location for a sensor in the sensor network. The projector stabilizer is configurable for maintaining the sensor-location projector in a sufficiently static orientation relative to the location for the sensor to allow deployment of the sensor within a specified distance of the location on a surface of the earth from the sensor-location marker. A sensor-network-deployment system along with a method for deploying the sensor-network are also provided. | 01-05-2012 |
| 20120002267 | Individually Addressable Nano-Scale Mechanical Actuators - An addressable nano-scale mechanical actuator is formed at the intersection of two nanowires. The actuator has an active region disposed between the two nanowires, which form the electrodes of the actuator. The active region contains an electrolytically decomposable material. When an activation voltage is applied to the electrodes, the material releases a gas that forms a bubble at one electrode, causing a bulging of a top surface of the actuator. The bulging may be used, via mechanical coupling, to provide mechanical actuation on a nanometer scale. The nanowires may be arranged in a two-dimensional array to provide an array of individually addressable actuators. | 01-05-2012 |
| 20120012809 | Switchable Junction with Intrinsic Diodes with Different Switching Threshold - A switchable junction ( | 01-19-2012 |
| 20120018698 | LOW-POWER NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL - A nanoscale switching device exhibits multiple desired properties including a low switching current level, being electroforming-free, and cycling endurance. The switching device has an active region disposed between two electrodes. The active region contains a switching material capable of transporting dopants under an electric field. The switching material is in an amorphous state and formed by deposition at or below room temperature. | 01-26-2012 |
| 20120026776 | MEMORY RESISTOR HAVING PLURAL DIFFERENT ACTIVE MATERIALS - Methods and means related to memory resistors are provided. A memristor includes at least two different active materials disposed between a pair of electrodes. The active materials are selected to exhibit respective and opposite changes in electrical resistance in response to changes in oxygen ion content. The active materials are subject to oxygen ion reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events. | 02-02-2012 |
| 20120032134 | Memristive Junction with Intrinsic Rectifier - A memristive junction ( | 02-09-2012 |
| 20120063197 | SWITCHABLE JUNCTION WITH AN INTRINSIC DIODE FORMED WITH A VOLTAGE DEPENDENT RESISTOR - A switchable junction ( | 03-15-2012 |
| 20120074372 | MEMRISTORS WITH AN ELECTRODE METAL RESERVOIR FOR DOPANTS - A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided. | 03-29-2012 |
| 20120074378 | MEMORY ELEMENT HAVING ELASTICALLY DEFORMABLE ACTIVE REGION - A memory element is provided that includes a first electrode, a second electrode, and an active region disposed between the first electrode and the second electrode, wherein at least a portion of the active region comprises an elastically deformable material, and wherein deformation of the elastically deformable material causes said memory element to change from a lower conductive state to a higher conductive state. A multilayer structure also is provided that includes a base and a multilayer circuit disposed above the base, where the multilayer circuit includes at least of the memory elements including the elastically deformable material. | 03-29-2012 |
| 20120081945 | MEMORY ARRAY WITH GRADED RESISTANCE LINES - A memory array with graded resistance lines includes a first set of lines intersecting a second set of lines. A line from one of the sets of lines includes a graded resistance along a length of the line. | 04-05-2012 |
| 20120085985 | ELECTRICALLY ACTUATED DEVICE - An electrically actuated device includes a reactive metal layer, a first electrode established in contact with the reactive metal layer, an insulating material layer established in contact with the first electrode or the reactive metal layer, an active region established on the insulating material layer, and a second electrode established on the active region. A conductive nano-channel is formed through a thickness of the insulating material layer. | 04-12-2012 |
| 20120099362 | MEMORY ARRAY WITH METAL-INSULATOR TRANSITION SWITCHING DEVICES - A memory array with Metal-Insulator Transition (MIT) switching devices includes a set of row lines intersecting a set of column lines and a memory element disposed at an intersection between one of the row lines and one of the column lines. The memory element includes a switching layer in series with an MIT material. A method of accessing a target memory element within a memory array includes applying half of an access voltage to a row line connected to the target memory element, the target memory element comprising a switching layer in series with an MIT material, and applying an inverted half of the access voltage to a column line connected to the target memory element. | 04-26-2012 |
| 20120104342 | Memristive Device - A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness. | 05-03-2012 |
| 20120104345 | MEMRISTIVE DEVICES WITH LAYERED JUNCTIONS AND METHODS FOR FABRICATING THE SAME - Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes. | 05-03-2012 |
| 20120120714 | MEMORY RESISTOR HAVING MULTI-LAYER ELECTRODES - Methods and means related to memory resistors are provided. A memristor includes two multi-layer electrodes and an active material layer. One multi-layer electrode forms an Ohmic contact region with the active material layer. The other multi-layer electrode forms a Schottky barrier layer with the active material layer. The active material layer is subject to oxygen vacancy profile reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events. | 05-17-2012 |
| 20120126932 | RESISTIVE SWITCHES - Resistive switches and related methods are provided. Such a resistive switch includes an active material in contact with opposite end electrodes. The active material defines electron traps that capture or release charges in accordance with applied switching voltages. Resistive switches are characterized by ON state and OFF state resistance curves. Resistance ratios of ten times or more are exhibited. The state of a resistive switch is determined using sensing voltages lesser then the switching threshold. | 05-24-2012 |
| 20120127780 | MEMORY RESISTOR ADJUSTMENT USING FEEDBACK CONTROL - Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings. | 05-24-2012 |
| 20120132880 | Memristors with Asymmetric Electrodes - Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device ( | 05-31-2012 |
| 20120133026 | Electrically Actuated Device And Method Of Controlling The Formation Of Dopants Therein - An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes. | 05-31-2012 |
| 20120138885 | ELECTRICAL CIRCUIT COMPONENT - An electrical circuit component includes a first electrode, a plurality of second electrodes and a negative differential resistance (NDR) material. The first electrode and the plurality of second electrodes are connected to the NDR material and the NDR material is to electrically connect the first electrode to one of the plurality of second electrodes when a sufficient voltage is applied between the first electrode and the one of the plurality of second electrodes through the NDR material. | 06-07-2012 |
| 20120146184 | TWO TERMINAL MEMCAPACITOR DEVICE - A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided. | 06-14-2012 |
| 20120164745 | NANOFINGER DEVICE WITH MAGNETIZABLE PORTION - A nanofinger device with magnetizable portion. The nanofinger device includes a substrate, and a plurality of nanofingers coupled with the substrate. A nanofinger of the plurality includes a flexible column, and at least one magnetizable portion. At least the nanofinger and a second nanofinger of the plurality of nanofingers are to arrange into a close-packed configuration. The magnetizable portion is to actuate the nanofinger in opening from the close-packed configuration in response to a physical stimulus affecting the magnetic state of the magnetizable portion. A chemical-analysis apparatus including the nanofinger device for chemical sensing and a method of using the nanofinger device for chemical sensing are also provided. | 06-28-2012 |
| 20120195099 | CHANGING A MEMRISTOR STATE - A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state. | 08-02-2012 |
| 20120223286 | ELECTROFORMING-FREE NANOSCALE SWITCHING DEVICE - A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less. | 09-06-2012 |
| 20120228575 | NANOSCALE ELECTRONIC DEVICE WITH BARRIER LAYERS - On example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and a device layer. The device layer comprises a first dielectric material, between the first and second conductive electrodes, that includes an effective device layer, a first barrier layer near a first interface between the first conductive electrode and the device layer, and a second barrier layer near a second interface between the second conductive electrode and the device layer. A second example of the present invention is an integrated circuit that incorporates nanoscale electronic devices of the first example. | 09-13-2012 |
| 20120249252 | OSCILLATOR CIRCUITRY HAVING NEGATIVE DIFFERENTIAL RESISTANCE - Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry. | 10-04-2012 |
| 20120280196 | ELECTROFORMING FREE MEMRISTOR - An electroforming free memristor ( | 11-08-2012 |
| 20120313070 | CONTROLLED SWITCHING MEMRISTOR - A controlled switching memristor includes a first electrode, a second electrode, and a switching layer positioned between the first electrode and the second electrode. The switching layer includes a material to switch between an ON state and an OFF state, in which at least one of the first electrode, the second electrode, and the switching layer is to generate a permanent field within the memristor to enable a speed and an energy of switching from the ON state to the OFF state to be substantially symmetric to a speed and energy of switching from the OFF state to the ON state. | 12-13-2012 |
| 20130023106 | DEVICE HAVING MEMRISTIVE MEMORY | 01-24-2013 |
| 20130026434 | MEMRISTOR WITH CONTROLLED ELECTRODE GRAIN SIZE - A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second material, and in which the alloy has a relatively smaller grain size than a grain size of the base material. The memristor also includes a switching layer positioned adjacent to the second surface of the first electrode and a second electrode positioned adjacent to the switching layer. | 01-31-2013 |
| 20130026440 | NANOSCALE SWITCHING DEVICES WITH PARTIALLY OXIDIZED ELECTRODES - A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided. | 01-31-2013 |
| 20130044525 | ASYMMETRIC SWITCHING RECTIFIER - An asymmetric switching rectifier includes a first switching device to allow electric current to flow while in a first state and inhibit electric current in a second state and a second switching device connected in a head-to-head formation to said first switching device, said second switching to allow electric current to flow while in a first state and inhibit electric current in a second state. A first electric current to turn said switching devices to said first state is different than a second electric current to turn said switching devices to said second state. The rectifier further includes a bypass segment to draw a bypass electric current from a center electrode between said first switching device and said second switching device. | 02-21-2013 |
| 20130051121 | SWITCHABLE TWO-TERMINAL DEVICES WITH DIFFUSION/DRIFT SPECIES - Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device ( | 02-28-2013 |
| Patent application number | Description | Published |
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| 20080275661 | On-machine methods for identifying and compensating force-ripple and side-forces produced by actuators on a multiple-axis stage - Methods, apparatus, and systems are disclosed for identifying force-ripple and/or side-forces in actuators used for moving a multiple-axis stage. The identified force-ripple and/or side-forces can be mapped, and maps of corresponding position-dependent compensation ratios useful for correcting same are obtained. The methods are especially useful for stages providing motion in at least one degree of freedom using multiple (redundant) actuators. In an exemplary method a stage member is displaced, using at least one selected actuator, multiple times over a set distance in the range of motion of the subject actuator(s). Each displacement has a predetermined trajectory and respective starting point in the range. For each displacement, respective section force-command(s) are extracted and normalized to a reference section force-command to define a section compensation-ratio. Multiple section compensation-ratios are assembled, as functions of displacement in the range, to provide a map of compensation ratios for the actuator(s) throughout the range. | 11-06-2008 |
| 20080278705 | STAGE ASSEMBLY WITH MEASUREMENT SYSTEM INITIALIZATION, VIBRATION COMPENSATION, LOW TRANSMISSIBILITY, AND LIGHTWEIGHT FINE STAGE - A stage assembly ( | 11-13-2008 |
| 20090237793 | ACTIVE-ISOLATION MOUNTS FOR OPTICAL ELEMENTS - Disclosed are, inter alia, optical components that include an optical element (e.g., mirror) and at least three active-isolation mounts mounting the optical element to a frame (e.g., optical barrel or optical frame). An active-isolation mount has a non-contacting actuator connecting a respective location on the optical element to the frame and provides movability of the respective location relative to the frame in at least one direction. At least one displacement sensor is associated with each respective location on the optical element. The displacement sensors are sensitive to displacements of the respective locations in at least one respective direction and reference the displacements to an absolute reference. The actuators and sensors are connected to a servo control loop to provide feedback control. | 09-24-2009 |
| 20100188647 | Control systems and methods applying iterative feedback tuning for feed-forward and synchronization control of microlithography stages and the like - Stage assemblies and control methods are disclosed. An exemplary assembly includes a first stage and first and second controllers. The first controller feedback-controls the first stage according to a respective parameter vector. The second controller controls the first stage by feed-forward control, according to a respective parameter vector. The controllers perform iterative feedback tuning IFT, including minimization of a cost-function of the parameter vectors from the first and second controllers. The second controller receives data including first-stage trajectory, and the first controller receives data including first-stage following-error. A suitable application of the assembly is in a microlithography system or other high-precision system. | 07-29-2010 |
| 20100222898 | Stage-control systems and methods including inverse closed loop with adaptive controller - Stage assemblies and control methods are disclosed. An exemplary stage assembly includes a movable stage and a control system. The stage-control system has first and second control loops. In the first control loop a first controller is programmed with a feedback-control transfer-function that determines a feedback-control output from an input including a following-error of the stage. The second control loop includes an inverse closed loop having an inverse plant model and a second controller programmed with an adaptive transfer-function connected to receive inputs including the following-error and the feedback-control output. The second controller determines, from the inputs, an adapted control output to the stage. The adaptive transfer-function can be, e.g., an AFC transfer-function producing an AFC controlled output or an ILC transfer-function producing an ILC controlled output. | 09-02-2010 |
| 20100237819 | Control Systems and Methods for Compensating for Effects of a Stage Motor - Embodiments of the invention compensate for one or more effects of a stage motor in a precision stage device. A feedforward module receives an input signal corresponding to the effect of the motor and generates a feedforward control signal that can be used to modify a motor control signal to compensate for the effect of the motor. In some embodiments, a control system is provided to compensate for a back-electromotive force generated by a motor, while in other embodiments, a control system may compensate for an inductive effect of a motor. Embodiments of the invention may be useful in precision stage devices, for example, lithography devices such as steppers and scanners. | 09-23-2010 |
| 20120060582 | METHOD FOR CALIBRATING A FORCE CONSTANT OF A MOTORIZED STAGE USED FOR SUPPORTING AND MOVING A WORKPIECE - Methods are disclosed for calibrating a force constant of a movable stage. In an exemplary method, in first and second preliminary pre-stepping motions of the stage, a baseline force and a calibration force, respectively, as exerted by the stage are measured. From a force-variation ratio of the baseline force and calibration force an inverse closed loop factor is estimated. In at least one subsequent pre-stepping motion of the stage before a respective use of the stage for holding an object, a residual force-variation ratio is estimated, a force-compensation factor is updated from the residual force-variation ratio, and a respective force-variation coefficient is determined from the force-compensation factor. | 03-15-2012 |
| 20120069316 | METHODS FOR LIMITING COUNTER-MASS TRIM-MOTOR FORCE AND STAGE ASSEMBLIES INCORPORATING SAME - An exemplary stage assembly has movable stage mass and counter-mass. A stage motor is coupled to the stage mass and counter-mass such that stage-mass motion imparted by the stage motor causes a reactive motion of the counter-mass counter to the motion of the stage mass. At least one trim-motor is coupled to the counter-mass. A control system commands the trim-motor to regulate movement of the counter-mass in reaction to stage-mass motion. A PI feedback controller receives the following-error of the counter-mass and generates corresponding center-of-gravity (CG) force commands and trim-motor force commands to the trim-motor(s) to produce corrective counter-mass motion. A trim-motor force limiter receives trim-motor force commands and produces corresponding limited trim-motor force commands that are fed back as actual CG force commands to the feedback controller to modify integral terms of the feedback controller according to the limited trim-motor force commands. | 03-22-2012 |
| 20120113405 | METHOD FOR DETERMINING A COMMUTATION OFFSET AND FOR DETERMINING A COMPENSATION MAP FOR A STAGE - A method for determining a commutation offset for a mover ( | 05-10-2012 |
| 20120127447 | METHOD FOR DETERMING A COMMUTATION OFFSET AND FOR DETERMINING A COMPENSATION MAP FOR A STAGE - A method for determining a commutation offset for a mover ( | 05-24-2012 |
| 20120328836 | Method and Apparatus to Allow a Plurality of Stages to Operate in Close Proximity - According to one aspect of the present invention, a stage apparatus includes a first stage, a first magnet arrangement, and a stator arrangement that includes a first coil having a first width. The first magnet arrangement is associated with the first stage, and includes a first quadrant and a second quadrant or, more generally, a first sub-array and a second sub-array. The first quadrant has at least one first magnet arranged parallel to a first axis, and the second quadrant has at least one second magnet arranged parallel to a second axis. The first quadrant is adjacent to the second quadrant relative to the first axis, and is spaced apart from the second quadrant by a distance relative to the second axis. The stator arrangement is configured to cooperate with the first magnet arrangement to drive the first stage | 12-27-2012 |
| 20130049647 | Force Distribution Method for Stage Systems Utilizing Dual Actuators - According to one aspect, a method for controlling a stage that is a part of a stage apparatus and is coupled to a voice coil motor (VCM) and an EI-core actuator arrangement includes driving the stage, identifying a frequency associated with the stage, and determining whether the frequency is below a frequency setpoint. The method also includes providing a first control force on the stage using the EI-core actuator arrangement when it is determined that the frequency is below the frequency setpoint, and providing the first control force on the stage using the VCM when it is determined that the frequency is not below the frequency setpoint. | 02-28-2013 |
