Patent application number | Description | Published |
20080277719 | NON-VOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a non-volatile memory cell and a method of fabricating the same. The non-volatile memory cell according to the present invention comprises a substrate, a first oxide film formed over an active region of the substrate, a source and drain formed within the active region, a charge storage unit formed on the first oxide film, a second oxide film configured to surround the charge storage unit and formed on the first oxide film, and a gate formed to surround the second oxide film. According to the non-volatile memory cell and a cell array including the same in accordance with the present invention, the charge storage unit is fully surrounded by the gate or the gate line, thus a disturbance phenomenon that may occur due to the memory operation of cells formed in other neighboring gate or gate line can be minimized. | 11-13-2008 |
20080283939 | DIELECTRIC-MODULATED FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME - The present invention relates to a Field-Effect Transistor (FET) and, more particularly, to a Dielectric-Modulated Field-Effect Transistor (DMFET) and a method of fabricating the same. A DMFET according to an embodiment of the present invention comprises a substrate in which a source and a drain are formed, wherein the source and the drain are spaced apart from each other, a gate formed on a region between the source and the drain, of the substrate, wherein at least part of the gate is spaced apart from the substrate, biomolecules formed below a region spaced apart from the substrate, of the gate, and a linker for combining the gate and the biomolecules. | 11-20-2008 |
20090047488 | COUNTERFEIT PREVENTION PAPER AND MANUFACTURING METHOD THEREOF - The present invention relates to a counterfeit prevention paper and manufacturing method thereof, and more particularly to currency, securities, official document and several certificates, etc. | 02-19-2009 |
20100035362 | BIO-SILICA CHIP COMPRISING SILICA BINDING PROTEIN AND METHOD FOR FABRICATING THE SAME - The present invention relates to a bio-silica chip comprising a silica-binding protein and a fabrication method thereof, and more particularly to a bio-silica chip in which a fusion protein of a silica-binding protein and a probe protein is immobilized on a chip comprising a silica layer, a fabrication method thereof and a method of using the bio-silica chip to detect interactions with biomaterials. The bio-silica chip will be very useful in biosensors, etc., because the bio-silica chip is advantageous in that it does not cause non-specific protein binding in the detection of protein-DNA, protein-ligand, protein-antibody, protein-peptide, protein-carbohydrate, protein-protein and cell-biomaterial interactions. Also, in the method for fabricating the bio-silica chip, a probe chip can be selectively immobilized on a silica device chip, which is widely used in biosensors, without a chemical surface treatment process. Thus, a chip fabricating process is simplified and a complicated process for purifying the probe protein becomes unnecessary, thus providing great improvements in productivity and economic efficiency | 02-11-2010 |
20100130005 | METHOD OF FORMING CARBON NANOTUBE ON SEMICONDUCTOR SUBSTRATE, METHOD OF FORMING SEMICONDUCTOR METAL WIRE USING THE SAME, AND METHOD OF FABRICATING INDUCTOR USING THE SAME - A method of fabricating a semiconductor device by filling carbon nanotubes in a recess is disclosed. The method of fabricating the semiconductor device comprises patterning a mold on a substrate, coating carbon nanotubes on an entire surface of the recess and the mold formed by the patterning, filling the carbon nanotubes coated on the an entire surface of the mold in the recess, and removing the mold. | 05-27-2010 |
20100237318 | PHASE CHANGE MEMORY DEVICE USING CARBON NANOTUBE - Provided are a phase change memory device that can operate at low power and improve the scale of integration by reducing a contact area between a phase change material and a bottom electrode, and a method for fabricating the same. The phase change memory comprises a current source electrode, a phase change material layer, a plurality of carbon nanotube electrodes, and an insulation layer. The current source electrode supplies external current to a target. The phase change material layer is disposed to face the current source electrode in side direction. The carbon nanotube electrodes are disposed between the current source electrode and the phase change material layer. The insulation layer is formed outside the carbon nanotube electrodes and functions to reduce the loss of heat generated at the carbon nanotube electrodes. | 09-23-2010 |
20110108795 | Molecular devices and methods of manufacturing the same - Molecular devices and methods of manufacturing the molecular device are provided. The molecular device may include a lower electrode on a substrate and a self-assembled monolayer on the lower electrode. After an upper electrode is formed on the self-assembled monolayer, the self-assembled monolayer may be removed to form a gap between the lower electrode and the upper electrode. A functional molecule having a functional group may be injected into the gap. | 05-12-2011 |