| Patent application number | Description | Published |
|---|
| 20110230623 | METHOD FOR CONTINUOUSLY PRODUCING ACRYLIC RESIN SHEET TECHNICAL FIELD - Disclosed is a method for continuously producing an acrylic resin sheet containing 50% by mass or more of methyl methacrylate units, which comprises irradiating an active energy ray-polymerizable viscous liquid | 09-22-2011 |
| 20120156510 | ANTI-SOILING COMPOSITION, ANTI-SOILING FILM, ANTI-SOILING LAMINATED FILM, TRANSFER FILM AND RESIN LAMINATE, AND METHOD FOR MANUFACTURING RESIN LAMINATE - An anti-soiling composition including: compound (A) having a perfluoropolyether group and an active energy ray-reactive group; and inorganic fine particles (B), wherein compound (A) is contained in an amount of 20 parts by mass or more and 75 parts by mass or less in 100 parts by mass of a solid content of the composition. | 06-21-2012 |
| 20120267042 | TRANSFER FILM, RESIN LAMINATE, METHOD FOR PRODUCING TRANSFER FILM, AND METHOD FOR PRODUCING RESIN LAMINATE - An object of the present invention is to provide a transfer film in which the function layer such as an anti-reflective layer can be laminated using a film having high surface tension, and a laminate including a soil resistant layer formed by a wet method and having high water repellency and oil repellency and high transparency, scratch resistance, and sweat resistance can be provided, and a method for producing the transfer film. A transfer film according to the present invention is a transfer film including a transparent base material film and a soil resistant cured film laminated on the surface of the transparent base material film, wherein a water contact angle ( | 10-25-2012 |
| Patent application number | Description | Published |
|---|
| 20090068593 | Photosensitive Resin Composition - The present invention relates to a photosensitive resin composition comprising at least a thermoplastic elastomer (a), a photopolymerizable unsaturated monomer (b), and a photopolymerization initiator (c), characterized in that the thermoplastic elastomer (a) comprises at least vinyl aromatic hydrocarbon units, butadiene units, and alkylene units and contains alkylene units not less than 5 wt % and not more than 80 wt % with respect to the total amount of butadiene units and alkylene units. The present invention provides a photosensitive resin composition that simultaneously achieves excellent fine line reproducibility, ester solvent resistance, and prevention of cracks occurring on plate surface. | 03-12-2009 |
| 20090155721 | FLEXOGRAPHIC PRINTING PLATE - According to the present invention, a flexographic printing plate and a photosensitive resin composition used therein are provided. The flexographic printing plate comprises a photocured product which is obtained by photocuring a photosensitive resin composition comprising a thermoplastic elastomer (a), a photopolymerizable unsaturated monomer (b) and a photopolymerization initiator (c) and has a loss tangent (tan δ) of 0.3 or more at 500 Hz in dynamic viscoelastometry using a nonresonance forced vibration apparatus. | 06-18-2009 |
| 20090176176 | Photosensitive Resin Composition for Flexographic Printing - There is provided a photosensitive resin composition for a solvent-developing or thermally-developing flexographic printing plate, the photosensitive resin composition comprising: (a) a block copolymer containing a polymer block having conjugated diene as a main component and a polymer block having a vinyl aromatic hydrocarbon as a main component; (b) a photopolymerizable monomer; (c) a photopolymerization initiator; and (d) an organosilicon compound. A photosensitive resin composition for printing in which the organosilicon compound is a silicone oil containing a specific group is preferable, and a photosensitive resin composition for printing in which the organosilicon compound is a silicone oil containing an amino group or an aryl group is most preferable. | 07-09-2009 |
| 20100143846 | PROCESS FOR PRODUCING PHOTOSENSITIVE RESIN PLATE AND RELIEF PRINTING PLATE HAVING RECESSED AND PROJECTED PATTERN, AND PLATE SURFACE TREATING LIQUID USED IN THE PROCESS - The present invention provides a process for producing a photosensitive resin plate or relief printing plate having a recessed and projected pattern, which comprises the steps of: making a liquid containing an ink-repellent component (A) and a curing component (B) attach to the plate surface of the photosensitive resin plate or relief printing plate having a recessed and projected pattern prior to the post-treatment step or during the post-treatment step, wherein the ink-repellent component (A) comprises at least one compound selected from the group consisting of silicon-based compounds, fluorine-based compounds and paraffin-based compounds, and provides a treatment liquid which is suitable for the process for producing the photosensitive resin plate or the relief printing plate having the recessed and projected pattern. | 06-10-2010 |
| Patent application number | Description | Published |
|---|
| 20100043472 | LOW TEMPERATURE SHOWCASE - An object is to provide a low temperature showcase in which waste heat from a condenser and the like can be utilized by a simple constitution to effectively eliminate dew condensation on a middle pillar, particularly on gasket of upper part of a door. The low temperature showcase includes a middle pillar whose front surface abuts on the gasket of the door; a machine chamber disposed outside a main body under a display chamber and including the condenser, a fan for the condenser and the like, and the showcase further includes a middle pillar duct member which is vertically attached to the middle pillar and in which a middle pillar duct is defined, a leading portion which leads air from the machine chamber into the middle pillar duct, and exhaust holes which discharge the air flowing upwards through the duct to the outside of the gasket between the upper part of the door and the main body. | 02-25-2010 |
| 20100058786 | LOW TEMPERATURE SHOWCASE - There is disclosed a highly safe low temperature showcase in which an insulating wall and insulating side panels constituting a main body are provided with continuity in respect of design, whereby appearance can be improved. The low temperature showcase has a constitution in which insulating side panels are attached to the left and right sides of a main body having a display chamber, each of the insulating side panels includes a see-through transparent wall, an insulating wall which holds upper and lower portions and a rear edge of this transparent wall and whose outer surface is positioned outside the outer surface of the transparent wall, a side panel rear cover which covers the insulating wall from the outside, and a side panel front cover which extends over the insulating wall and the transparent wall to cover the front edges of these walls. The side panel front cover has at least a front wall and a side wall, and the side wall is positioned outside the outer surface of the transparent wall. Moreover, the inner side of the side wall is provided with a plurality of ribs which reach the outer surface of the transparent wall. | 03-11-2010 |
| 20100058787 | LOW TEMPERATURE SHOWCASE - An object is to prevent any gap from being generated in an abutment portion between an outer surface cover and a back surface plate or the like, whereby these components are provided with a sense of continuity, and the improvement of an appearance can be achieved. In a low temperature showcase in which insulating side panels are attached to the left and right sides of a main body having a display chamber, each of the insulating side panels includes a see-through transparent wall; an insulating wall which holds upper and lower portions and a rear edge of this transparent wall; a side panel rear cover which covers this insulating wall from the outside; and a side panel front cover which covers the front edges of the insulating wall and the transparent wall and which is attached to the front part of the side panel rear cover, and abutment portions of the side panel front cover and the side panel rear cover are provided with inclined surfaces directed outwards as the surfaces extend rearwards, respectively. | 03-11-2010 |
| 20100058788 | LOW TEMPERATURE SHOWCASE - There is disclosed a low temperature showcase in which dew condensation occurring on transparent walls is efficiently decreased, whereby the lowering of visibility can be avoided, and a disadvantage that customer's clothes are made dirty can be suppressed. The low temperature showcase has a constitution in which insulating side panels are attached to the left and right sides of a main body having a display chamber and in which a machine chamber is disposed in the lower part of the main body outside the display chamber, each of the insulating side panels includes a see-through transparent wall and a side panel front cover which covers the front edge of this transparent wall, and this side panel front cover has a waste heat passage which communicates with the inside of the machine chamber and a space of the outer surface of the transparent wall. | 03-11-2010 |
| Patent application number | Description | Published |
|---|
| 20100243606 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a vacuum evacuable processing chamber; a lower electrode for mounting a target substrate in the processing chamber; a focus ring attached to the lower electrode to cover at least a portion of a peripheral portion of the lower electrode; an upper electrode disposed to face the lower electrode in parallel in the processing chamber; a processing gas supply unit for supplying a processing gas to a processing space; and a radio frequency (RF) power supply for outputting an RF power. Further, the plasma processing apparatus includes a plasma generating RF power supply section for supplying the RF power to a first load for generating a plasma of the processing gas; and a focus ring heating RF power supply section for supplying the RF power to a second load for heating the focus ring. | 09-30-2010 |
| 20110094682 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion. | 04-28-2011 |
| 20110094995 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna. | 04-28-2011 |
| 20110094996 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation. | 04-28-2011 |
| 20110094997 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; | 04-28-2011 |
| 20110104902 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil. | 05-05-2011 |
| 20110233170 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a vacuum evacuable processing chamber, at least a portion of which is formed of a dielectric window; a substrate supporting unit for supporting a target substrate in the processing chamber; and a processing gas supply unit for supplying a desired processing gas into the processing chamber. Further, the plasma processing apparatus includes an RF antenna provided outside the dielectric window; a high frequency power supply unit for supplying to the RF antenna a high frequency power; and a switching network switched among a parallel mode, a multiplication series mode, and a minimization series mode. | 09-29-2011 |
| 20120073757 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus including a processing chamber having a dielectric window; a substrate holding unit for holding thereon a processing target substrate within the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber in order to perform a plasma process on the substrate; a RF antenna provided outside the dielectric window in order to generate plasma of the processing gas within the processing chamber by inductive coupling; and a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency electric discharge of the processing gas. Here, the RF antenna includes a plurality of coil segments that are arranged along a loop having a preset shape and a preset size while electrically connected in parallel to each other. | 03-29-2012 |
| 20120074100 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - There is provided an inductively coupled plasma processing apparatus capable of reducing a RF power loss within a high frequency power supply unit (particularly, a matching unit) and capable of enhancing a plasma generation efficiency. In this inductively coupled plasma processing apparatus, a multiple number of closed-loop secondary circuits | 03-29-2012 |
| 20120248066 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An inductively coupled plasma process can effectively and properly control plasma density distribution within donut-shaped plasma in a processing chamber is provided. In an inductively coupled plasma processing apparatus, a RF antenna | 10-04-2012 |
| 20120250213 | SUBSTRATE REMOVING METHOD AND STORAGE MEDIUM - A substrate processing apparatus includes an electrostatic chuck enclosing an electrostatic electrode plate and a chamber having a ground potential and housing the electrostatic chuck. DC discharge is generated between a wafer and the chamber by setting the potential of the electrostatic electrode plate of the electrostatic chuck which is maintained at a first predetermined potential during a plasma etching process to a ground potential after the plasma etching process to increase the absolute value of the potential difference between the wafer and the chamber. DC discharge is then re-generated by applying, to the electrostatic electrode plate, DC voltage having the same potential as a second predetermined potential which is generated at the wafer after the DC discharge is generated, and by increasing the absolute value of the potential difference between the wafer and the chamber. The wafer is then easily removed from the electrostatic chuck. | 10-04-2012 |
| 20120250214 | SUBSTRATE REMOVING METHOD AND STORAGE MEDIUM - A substrate processing apparatus includes an electrostatic chuck enclosing an electrostatic electrode plate and a chamber having a ground potential and housing the electrostatic chuck. When the absolute value of the potential generated at a wafer after DC discharge is generated between the wafer and the chamber is 0.5 kV, the potential of the electrostatic electrode plate is changed from 2.5 kV to 1.5 kV to generate DC discharge so that the absolute value of the potential of a placing surface of the wafer of the electrostatic chuck becomes 0.5 kV after the plasma etching process, the polarities of the potential of the placing surface after the change and the wafer become the same, and the absolute value of the potential difference between the wafer and the chamber becomes 0.5 kV or more. The wafer is then removed from the electrostatic chuck. | 10-04-2012 |
| Patent application number | Description | Published |
|---|
| 20100243609 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Uniformity of plasma density distribution and process characteristics is improved by greatly improving performance and the degree of freedom for controlling the plasma density distribution. A capacitively coupled plasma processing apparatus includes a plasma density distribution controller, installed in a chamber lower room, for controlling plasma density distribution on a susceptor. The plasma density distribution controller includes a conductive plate (first conductor) which is placed under a rear surface of the susceptor at a certain position to face the susceptor and a conductive rod (second conductor) which supports the conductive plate upward and is electrically grounded. An upper end (first connecting portion) of the conductive rod is fixed to a certain portion of a bottom surface of the conductive plate, and a lower end (second connecting portion) of the conductive rod is fixed to or is in contact with a bottom wall of a chamber. | 09-30-2010 |
| 20110126765 | PLASMA PROCESSING APPARATUS - A parallel resonance frequency can be adjusted in order to stably and securely block different high frequency noises flowing into a line such as a power feed line or a signal line from electric members including a high frequency electrode within a processing chamber. A filter | 06-02-2011 |
| 20120073756 | PLASMA PROCESSING APPARATUS - There is provided an inductively coupled plasma etching apparatus capable of suppressing a wavelength effect within a RF antenna and performing a plasma process uniformly in both a circumferential and a radial direction. In the plasma etching apparatus, a RF antenna | 03-29-2012 |
| 20120247679 | PLASMA PROCESSING APPARATUS - In an inductively coupled plasma processing apparatus, it is possible to control a plasma density distribution while suppressing a wavelength effect within a RF antenna. Provided at a ceiling of a chamber | 10-04-2012 |
