Patent application number | Description | Published |
20100328639 | SPECTRAL PURITY FILTER, LITHOGRAPHIC APPARATUS, AND METHOD FOR MANUFACTURING A SPECTRAL PURITY FILTER - A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in carrier material such as silicon by an anisotropic etching process and topped with a reflective layer such as Mo metal, Ru metal, TiN or RuO. A diffusion barrier layer such as silicon nitride Si | 12-30-2010 |
20110013166 | RADIATION SYSTEM AND LITHOGRAPHIC APPARATUS - A radiation system includes a target material supply configured to supply droplets of target material along a trajectory, and a laser system that includes an amplifier and optics. The optics are configured to establish a first beam path which passes through the amplifier and through a first location on the trajectory, and to establish a second beam path which passes through the amplifier and through a second location on the trajectory. The laser system is configured to generate a first pulse of laser radiation when photons emitted from the amplifier are reflected along the first beam path by a droplet of target material at the first location on the trajectory. The laser system is configured to generate a second pulse of laser radiation when photons emitted from the amplifier are reflected along the second beam path by the droplet of target material at the second location on the trajectory. | 01-20-2011 |
20110019174 | OPTICAL ELEMENT, LITHOGRAPHIC APPARATUS INCLUDING SUCH AN OPTICAL ELEMENT, DEVICE MANUFACTURING METHOD, AND DEVICE MANUFACTURED THEREBY - An optical element includes a first layer that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength. | 01-27-2011 |
20110043782 | SPECTRAL PURITY FILTERS FOR USE IN A LITHOGRAPHIC APPARATUS - A spectral purity filter includes a plurality of apertures extending through a member. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation, A first region of the spectral purity filter has a first configuration that results in a first radiation transmission profile for the radiation having the first wavelength and the radiation having the second wavelength, and a second region of the spectral purity filter has a second, different configuration that results in a second, different radiation transmission profile for the radiation having the first wavelength and the radiation having the second wavelength. | 02-24-2011 |
20110109892 | SOURCE MODULE OF AN EUV LITHOGRAPHIC APPARATUS, LITHOGRAPHIC APPARATUS, AND METHOD FOR MANUFACTURING A DEVICE - A source module for use in a lithographic apparatus is constructed to generate extreme ultra violet (EUV) and secondary radiation, and includes a buffer gas configured to cooperate with a source of the EUV radiation. The buffer gas has at least 50% transmission for the EUV radiation and at least 70% absorption for the secondary radiation. | 05-12-2011 |
20110143269 | RADIATION SOURCE, LITHOGRAPHIC APPARATUS, AND DEVICE MANUFACTURING METHOD - A spectral purity filter is configured to transmit extreme ultraviolet (EUV) radiation and deflect or absorb non-EUV secondary radiation. In an embodiment, the spectral purity filter includes a body of material highly transmissive of EUV radiation and a layer of material highly reflective of non-EUV secondary radiation located on a radiation incident side of the body. In an embodiment, the spectral purity filter includes a body of material highly transmissive of EUV radiation and a layer of high emissivity material on an end of the body. | 06-16-2011 |
20110164237 | SPECTRAL PURITY FILTER, LITHOGRAPHIC APPARATUS, AND METHOD FOR MANUFACTURING A SPECTRAL PURITY FILTER - A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures configured to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. Each aperture has been manufactured by an anisotropic etching process. | 07-07-2011 |
20110170083 | Lithographic Apparatus and Device Manufacturing Method - A system and method are used to detect thermal radiation from a mask. Debris particles on the mask heat up, but do not cool down as quickly as the surrounding mask. Due to the temperature difference, the wavelength of radiation emitted by particles and the mask differs. Thus by detecting the thermal radiation, it is possible to detect the presence of particles deposited on the mask. If particles are detected, the mask can be cleaned. | 07-14-2011 |
20110211185 | Spectral Purity Filter, Radiation Source, Lithographic Apparatus, and Device Manufacturing Method - A spectral purity filter is configured to allow transmission therethrough of extreme ultraviolet (EUV) radiation and to refract or reflect non-EUV secondary radiation. The spectral purity filter may be part of a source module and/or a lithographic apparatus. | 09-01-2011 |
20110222040 | RADIATION SOURCE APPARATUS, LITHOGRAPHIC APPARATUS, METHOD OF GENERATING AND DELIVERING RADIATION AND METHOD FOR MANUFACTURING A DEVICE - A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma. | 09-15-2011 |
20110226735 | IMPRINT LITHOGRAPHY - An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium. | 09-22-2011 |
20110228243 | Mirror, Lithographic Apparatus and Device Manufacturing Method - Embodiments of the invention relate to a mirror ( | 09-22-2011 |
20120170015 | SPECTRAL PURITY FILTER, LITHOGRAPHIC APPARATUS, METHOD FOR MANUFACTURING A SPECTRAL PURITY FILTER AND METHOD OF MANUFACTURING A DEVICE USING LITHOGRAPHIC APPARATUS - A spectral purity filter includes a substrate, a plurality of apertures through the substrate, and a plurality of walls. The walls define the plurality of apertures through the substrate. The spectral purity filter also includes a first layer formed on the substrate to reflect radiation of a first wavelength, and a second layer formed on the first layer to prevent oxidation of the first layer. The apertures are constructed and arranged to be able to transmit at least a portion of radiation of a second wavelength therethrough. | 07-05-2012 |
20120327381 | Radiation Source, Lithographic Apparatus and Device Manufacturing Method - A radiation source for generating extreme ultraviolet radiation for a lithographic apparatus has a debris mitigation device comprising a nozzle arranged at or near an intermediate focus (IF) of the beam of radiation. The nozzle serves to direct a flow of gas ( | 12-27-2012 |
20130010275 | LITHOGRAPHIC APPARATUS AND SPECTRAL PURITY FILTER - A reflector includes a multi layer mirror structure configured to reflect radiation at a first wavelength, and one or more additional layers. The absorbance and refractive index at a second wavelength of the multi layer mirror structure and the one or more additional layers, and the thickness of the multi layer mirror structure and the one or more additional layers, are configured such that radiation of the second wavelength which is reflected from a surface of the reflector interferes in a destructive manner with radiation of the second wavelength which is reflected from within the reflector. | 01-10-2013 |
20130015373 | EUV Radiation Source and EUV Radiation Generation Method - An EUV radiation source comprising a fuel supply ( | 01-17-2013 |
20130038926 | SPECTRAL PURITY FILTER - A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from a material having a bulk reflectance of substantially greater than or equal to 70% at the first wavelength of radiation. The material has a melting point above 1000° C. | 02-14-2013 |
20130057840 | Multilayer Mirror - There is provided a multilayer mirror ( | 03-07-2013 |
20130070218 | SYSTEM FOR REMOVING CONTAMINANT PARTICLES, LITHOGRAPHIC APPARATUS, METHOD FOR REMOVING CONTAMINANT PARTICLES AND METHOD FOR MANUFACTURING A DEVICE - A system for removing contaminant particles from the path of the beam of EUV radiation is provided in which at least a first AC voltage is provided to a pair of electrodes on opposite sides of the path of the beam of EUV radiation as a first stage of a regime of voltages and, as a second stage of the regime of voltages, a DC voltage is provided to the electrodes. | 03-21-2013 |
20130088699 | LITHOGRAPHIC APPARATUS AND METHOD - A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles through the membrane. A particle trapping structure is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles from inside the chamber to outside the chamber. | 04-11-2013 |
20140160455 | PELLICLE FOR RETICLE AND MULTILAYER MIRROR - A pellicle that includes graphene is constructed and arranged for an EUV reticle. A multilayer mirror includes graphene as an outermost layer. | 06-12-2014 |