Yabuhara

Hidehiko Yabuhara, Kanagawa-Ken JP

Patent application number	Description	Published
20080237686	SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a control gate electrode having a first layer of polycrystalline silicon. The first layer is formed by decreasing a thickness of a first film of doped polycrystalline silicon. The first layer retains a dopant activation ratio of the first film. A method for manufacturing a semiconductor device, includes: forming a first film of doped polycrystalline silicon; and decreasing a thickness of the first film. The first film is formed by heat treating an amorphous silicon film provided on an insulating film.	10-02-2008
20080244481	METHOD FOR DESIGNING AND MANUFACTURING SEMICONDUCTOR DEVICE AND SOFTWARE THEREFOR - A method for designing a semiconductor device including a semiconductor substrate and an interconnect on the semiconductor substrate, with X-direction being one direction parallel to the semiconductor substrate, Y-direction being a direction parallel to the semiconductor substrate and perpendicular to the X-direction, and Z-direction being perpendicular to the semiconductor substrate, the method includes: determining a cross-sectional configuration in the X-Z direction; three-dimensionalizing the cross-sectional configuration with a range in the Y-direction being specified; and using the three-dimensionalized configuration as a model.	10-02-2008

Patent application number	Description	Published
20100182551	Anti-Glare Film - The present invention provides an anti-glare film which has not only <1> sufficient anti-reflection property but also <2> a high level of contrast and <3> strong anti-glare properties and can be applied on a surface of various display devices such as a note PC, a desktop PC and a TV monitor. The anti-glare film of the present invention includes an anti-glare layer which has concavities and convexities on the surface, a haze according to JIS-7105-1981 in the range of 1.0-5.0%, and an average interval between concavities and convexities on the anti-glare layer surface Sm according to JIS-B0601-1994 in the range of 10-150 μm.	07-22-2010
20100238384	Anti-Glare Film, Polarizing Plate and Transmission Type LCD - The present invention provides an anti-glare film which has <1> sufficient anti-reflection properties, <2> a high level of contrast and <3> strong antifouling properties. A surface of an anti-glare layer of the anti-glare film of the present invention has a concave-convex structure, an arithmetic mean roughness (Ra) according to JIS B0601-1994 in the range of 0.02-0.2 μm when a cut-off wavelength (λc) is 0.8 mm, and a surface free energy in the range of 15-25 mN/m. In addition, a haze of the anti-glare layer of the anti-glare film of the present invention is in the range of 1.0-5.0%.	09-23-2010

Patent application number	Description	Published
20090249747	Method of Packaging Compound Semiconductor Substrates - Affords a compound semiconductor substrate packaging method for preventing oxidation of the surface of compound semiconductor substrates. The compound semiconductor substrate packaging method provides: a first step of inserting a compound semiconductor substrate (	10-08-2009