Patent application number | Description | Published |
20090057711 | SEMICONDUCTOR DEVICE WITH A U-SHAPE DRIFT REGION - A semiconductor device with a U-shape drift region comprises a semiconductor substrate of a first conductivity type, a trench filled with an insulator material formed in a portion of a first main surface of the substrate, a cell of the device including the trench and semiconductor region surrounding the trench. The semiconductor device has at least one cell. Two device-feature regions are formed beneath the first main surface of the substrate, the first one is located at one side and the second one is located at the other side of the trench. At least a region of a second conductivity type and/or a region of metal is formed in the first device feature region and is connected to a first electrode. At least a region of a first conductivity type and/or a region of metal is formed in the second device feature region and is connected to a second electrode. Based on this invention, semiconductor devices, especially, an IGBT without tail during turning-off can be fabricated with a simple process at a low cost. | 03-05-2009 |
20090284306 | METHOD OF PRODUCING A LOW-VOLTAGE POWER SUPPLY IN A POWER INTEGRATED CIRCUIT - In a chip containing high-voltage device with a semiconductor substrate of a first conductivity type, a method of implementing low-voltage power supply is provided, wherein the electrical potential of an isolated region of a second conductivity type in a surface portion is used as one output terminal or as a voltage by which a transistor is controlled to provide output current for a low-voltage power supply. The other output terminal could be either terminal of the two that apply high voltage to high-voltage device or could be a floating terminal. Using this method, a low-voltage power supply can be implemented not only for the low-voltage integrated circuit (I) in a power IC containing one high-voltage device, but also for the low-voltage integrated circuit in a power IC having totem-pole connection or CMOS connection. As there is no need to implement depletion mode device in the chip, the fabrication cost is reduced. | 11-19-2009 |
20100171193 | SEMICONDUCTOR DEVICE - This invention provides a semiconductor device, which is used to manufacture two lateral high-voltage devices on the same substrate, where the voltages between maximum voltage terminals and minimum voltage terminals of the two devices have not too much difference. Both devices are formed on two different surface regions with a small isolation region in-between the two regions. When the semiconductor region(s) of the isolation region is fully depleted, its effective electric flux density emitted to the substrate is of a value between the values of its adjacent regions of said two semiconductor devices. The figure presented here schematically shows the structure used to form a low-side high-voltage n-MOST and high-voltage n-MOST and M | 07-08-2010 |
20100219446 | HIGH SPEED IGBT - An IGBT with almost no tail during turning-off is formed by connection of both the base and the emitter of the BJT of the IGBT at the bottom of the chip to two regions in an area of the top surface of the chip. The two regions keep non-depleted even under a maximum voltage being applied across the collector and the base of the BJT. The current through the two regions can be controlled by a gate voltage of a place close to the active region of the MISFET of the IGBT through a surface voltage-sustaining region. The injection efficiency of minorities of the IGBT can thus be controlled. | 09-02-2010 |
20100244089 | LATERAL SCHOTTKY DIODE - High-side and low-side surface voltage sustaining regions is produced by utilizing optimum surface variation lateral doping. Schottky junctions are formed by depositing metal M on an n-type region having the lowest potential, taking M as the anode A | 09-30-2010 |
20100252883 | Lateral High-Voltage Semiconductor Devices with Majorities of Both Types for Conduction - This invention provides a lateral high-voltage semiconductor device, which is a three-terminal one with two types of carriers for conduction and consists of a highest voltage region and a lowest voltage region referring to the substrate and a surface voltage-sustaining region between the highest voltage region and the lowest voltage region. The highest voltage region and the lowest region have an outer control terminal and an inner control terminal respectively, where one terminal is for controlling the flow of majorities of one conductivity type and another for controlling the flow of majorities of the other conductivity type. The potential of the inner control terminal is regulated by the voltage applied to the outer control terminal. The figure presented schematically shows a device by using an n-MOSFET to control the flow of electrons and a pnp bipolar transistor to control the flow of holes, and the potential of the base region of the pnp transistor is regulated by the voltage applied to the gate electrode of the n-MOSFET. | 10-07-2010 |
20110163351 | Low Voltage Power Supply - This invention provides a structure for low-voltage power supply in high-voltage devices or IC's made on a semiconductor substrate of a first conductivity type. The structure comprises a heavily doped semiconductor region of the first conductivity type between, but not contacted with, two semiconductor regions of the second conductivity type. When the two semiconductor regions of the second conductivity type have reverse-biased voltage with respect to substrate, the depletion region of substrate reaches the heavily doped semiconductor region of the first conductivity type, the heavily doped semiconductor region of the first conductivity type constructs a terminal of low-voltage power supply and any one of the semiconductor region of the second conductivity type constructs another terminal. The heavily doped semiconductor region is used as one terminal of a primary low-voltage power supply and any other region is used as another terminal of it. Thus, the cost of a low-voltage power supply can be reduced and the electrical performances be improved. | 07-07-2011 |
20130168729 | Voltage-Sustaining Layer Consisting of Semiconductor and Insulator Containing Conductive Particles for Semiconductor Device - A semiconductor device has at least a cell between two opposite main surfaces. Each cell has a first device feature region contacted with the first main surface and a second device feature region contacted with the second main surface. There is a voltage-sustaining region between the first device feature region and the second device feature region, which includes at least a semiconductor region and an insulator region containing conductive particles. The semiconductor region and the insulator region contact directly with each other. The structure of such voltage-sustaining region can not only be used to implement high-voltage devices, but further be used as a junction edge technique of high-voltage devices. | 07-04-2013 |
20130175657 | Surface (Lateral) Voltage-sustaining Region with an Insulator Film Containing Conductive Particles - A method or an auxiliary method to implement Optimum Variation Lateral Electric Displacement uses an insulator film(s) containing conductive particles covering on the semiconductor surface. This film(s) is capable of transmitting electric displacement into or extracting it from the semiconductor surface, or even capable of extracting some electric displacement from a part of the semiconductor surface and then transmitting it to another part of the surface. Optimum Variation Lateral Electric Displacement can be used to fabricate lateral high voltage devices, or as the edge termination for vertical high voltage devices, or to make capacitance. It can be further used to prevent strong field at the boundaries of semiconductor regions of different types of conductivity types. | 07-11-2013 |
20140048843 | BOTH CARRIERS CONTROLLED THYRISTOR - The present invention relates to a technique of semiconductor devices, and provides a semiconductor device, which uses two controllable current sources to control the electron current and the hole current of the voltage-sustaining region of a thyristor under conduction state, making the sum of current between anode and cathode close to saturation under high voltage, thus avoiding the current crowding effect in local region and increasing the reliability of the device. Besides, it further provides a method of implementing the two current sources in the device and a method to improve the switching speed. | 02-20-2014 |