Patent application number | Description | Published |
20080302652 | Particle Reduction Through Gas and Plasma Source Control - A system for producing excited gases for introduction to a semiconductor processing chamber. The system includes a plasma source for generating a plasma. The plasma source includes a plasma chamber and a gas inlet for receiving process gases from a gas source. A gas flow rate controller is coupled to the gas inlet for controlling an inlet flow rate of the process gases from the gas source to the plasma chamber via the gas inlet. The system includes a control loop for detecting a transition from a first process gas to a second process gas and for adjusting the inlet flow rate of the second process gas from about 0 sccm to about 10,000 sccm over a period of time greater than about 300 milliseconds to maintain transient heat flux loads applied by the plasma to an inner surface of the plasma chamber below a vaporization temperature of the plasma chamber. | 12-11-2008 |
20090095901 | CHEMICAL IONIZATION REACTION OR PROTON TRANSFER REACTION MASS SPECTROMETRY WITH A QUADRUPOLE MASS SPECTROMETER - A system and methods are described for generating reagent ions and product ions for use in a quadrupole mass spectrometry system. A microwave or high-frequency RF energy source ionizes particles of a reagent vapor to form reagent ions. The reagent ions enter a chamber, such as a drift chamber, to interact with a fluid sample. An electric field directs the reagent ions and facilitates an interaction with the fluid sample to form product ions. The reagent ions and product ions then exit the chamber under the influence of an electric field for detection by a quadrupole mass spectrometer module. The system includes various control modules for setting values of system parameters and analysis modules for detection of mass values for ion species during spectrometry and faults within the system. | 04-16-2009 |
20090095902 | CHEMICAL IONIZATION REACTION OR PROTON TRANSFER REACTION MASS SPECTROMETRY WITH A TIME-OF-FLIGHT MASS SPECTROMETER - A system, components thereof, and methods are described for time-of-flight mass spectrometry. A microwave or high-frequency RF energy source is used to ionize a reagent vapor to form reagent ions. The reagent ions enter a chamber and interact with a fluid sample to form product ions. The reagent ions and product ions are directed to a time-of-flight mass spectrometer module for detection and determination of a mass value for the ions. The time-of-flight mass spectrometer module can include an optical system and an ion beam adjuster for focusing, interrupting, or altering a flow of reagent and product ions according to a specified pattern. The time-of-flight mass spectrometer module can include signal processing techniques to collect and analyze an acquired signal, for example, using statistical signal processing, such as maximum likelihood signal processing. | 04-16-2009 |
20090288772 | Method and Apparatus for Processing Metal Bearing Gases - A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material. | 11-26-2009 |
20090320677 | PARTICLE TRAP FOR A PLASMA SOURCE - A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source also includes a gas channel formed in the body structure and in fluid communication with the body structure inlet and the body structure outlet. The gas channel can define a path through the body structure that causes particles in a gas passing from a first portion of the channel to strike a wall that defines a second portion of the gas channel at an angle relative to a surface of the wall. A coolant member can be in thermal communication with the gas channel. | 12-31-2009 |
20100206847 | Toroidal plasma chamber for high gas flow rate process - A plasma chamber for activating a process gas, including at least four legs forming a toroidal plasma channel, each leg having a cross-sectional area, and an outlet formed on one leg, the outlet having a greater cross-sectional area than the cross-sectional area of the other legs. The plasma chamber further includes an inlet for receiving the process gas and a plenum for introducing the process gas over a broad area of the leg opposing the outlet to reduce localized high plasma impedance and gas flow instability, wherein the leg opposing the outlet defines a plurality of holes for providing a helical gas rotation in the plasma channel. | 08-19-2010 |
20100219757 | Method and Apparatus of Providing Power to Ignite and Sustain a Plasma in a Reactive Gas Generator - Described are methods and apparatuses, including computer program products, for igniting and/or sustaining a plasma in a reactive gas generator. Power is provided from an ignition power supply to a plasma ignition circuit. A pre-ignition signal of the plasma ignition circuit is measured. The power provided to the plasma ignition circuit is adjusted based on the measured pre-ignition signal and an adjustable pre-ignition control signal. The adjustable pre-ignition control signal is adjusted after a period of time has elapsed. | 09-02-2010 |
20110005922 | Methods and Apparatus for Protecting Plasma Chamber Surfaces - A method for creating a protective layer over a surface of an object comprising aluminum and magnesium for use in a semiconductor processing system, which includes oxidizing the surface of the object using a plasma electrolytic oxidation process. The method also includes generating a halogen-comprising plasma by exciting a gas comprising a halogen. The method also includes exposing the oxidized surface to the halogen-comprising plasma or excited gas. | 01-13-2011 |
20110297319 | Reduction of Copper or Trace Metal Contaminants in Plasma Electrolytic Oxidation Coatings - A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer. | 12-08-2011 |
20120003748 | Chemical Ionization Reaction or Proton Transfer Reaction Mass Spectrometry - A system and methods are described for generating reagent ions and product ions for use in a mass spectrometry system. Applications for the system and method are also disclosed for detecting volatile organic compounds in trace concentrations. A microwave or high-frequency RF energy source ionizes particles of a reagent vapor to form reagent ions. The reagent ions enter a chamber, such as a drift chamber, to interact with a fluid sample. An electric field directs the reagent ions and facilitates an interaction with the fluid sample to form product ions. The reagent ions and product ions then exit the chamber under the influence of an electric field for detection by a mass spectrometer module. The system includes various control modules for setting values of system parameters and analysis modules for detection of mass and peak intensity values for ion species during spectrometry and faults within the system. | 01-05-2012 |
20120160059 | Method and Apparatus for Processing Metal Bearing Gases - A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material. | 06-28-2012 |
20120287545 | METHOD AND SYSTEM FOR SHOOT-THROUGH PROTECTION - A switching apparatus includes a first transistor, a second transistor, a first circuit module, a first current sensor and a control circuit. The first transistor includes first, second and third terminals. The first terminal of the first transistor is coupled to a first power terminal. The third terminal of the first transistor includes a gate or base of the first transistor. The second transistor includes first, second and third terminals. The first terminal of the second transistor is coupled to a second power terminal. The second terminal of the second transistor is coupled to the second terminal of the first transistor. The third terminal of the second transistor includes a gate or base of the second transistor. The first circuit module includes an inductor in parallel with a diode. The first circuit module is connected between the first terminal of the second transistor and the second power terminal. | 11-15-2012 |
20130118589 | Toroidal Plasma Channel with Varying Cross-Section Areas Along the Channel - An assembly for adjusting gas flow patterns and gas-plasma interactions including a toroidal plasma chamber. The toroidal plasma chamber has an injection member, an output member, a first side member and a second side member that are all connected. The first side member has a first inner cross-sectional area in at least a portion of the first side member and a second inner cross-sectional area in at least another portion of the first side member, where the first inner cross-sectional area and the second inner-cross-sectional area being different. The second side member has a third inner cross-sectional area in at least a portion of the second side member and a fourth inner cross-sectional area in at least another portion of the second side member, where the third inner cross-sectional area and the fourth inner-cross-sectional area being different. | 05-16-2013 |
20130146225 | GAS INJECTOR APPARATUS FOR PLASMA APPLICATOR - A plasma chamber for use with a reactive gas source that includes a first conduit comprising a wall, an inlet, an outlet, an inner and outer surface, and a plurality of openings through the wall, the inlet receives a first gas for generating a reactive gas in the first conduit with a plasma formed in the first conduit. The plasma chamber also includes a second conduit that includes a wall, an inlet, and an inner surface. The first conduit is disposed in the second conduit defining a channel between the outer surface of the first conduit and the inner surface of the second conduit. A second gas provided to the inlet of the second conduit flows along the channel and through the plurality of openings of the wall of the first conduit into the first conduit to surround the reactive gas and plasma in the first conduit. | 06-13-2013 |
20130203180 | Chemical Ionization Reaction or Proton Transfer Reaction Mass Spectrometry - A system and methods are described for generating reagent ions and product ions for use in a mass spectrometry system. Applications for the system and method are also disclosed for detecting volatile organic compounds in trace concentrations. A microwave or high-frequency RF energy source ionizes particles of a reagent vapor to form reagent ions. The reagent ions enter a chamber, such as a drift chamber, to interact with a fluid sample. An electric field directs the reagent ions and facilitates an interaction with the fluid sample to form product ions. The reagent ions and product ions then exit the chamber under the influence of an electric field for detection by a mass spectrometer module. The system includes various control modules for setting values of system parameters and analysis modules for detection of mass and peak intensity values for ion species during spectrometry and faults within the system. | 08-08-2013 |
20130257301 | COMPACT, CONFIGURABLE POWER SUPPLY FOR ENERGIZING OZONE-PRODUCING CELLS - Improvements in the supply of high-frequency electrical power to ozone-producing cells can be accomplished using the systems and techniques described herein. Application of a DC-DC converter operating at a switching frequency substantially greater than a load frequency, supports generation of a high-voltage AC for powering such cells, while allowing for reductions in component size and reductions in a quality factor of a load tuning circuit. Controllable power inverters used in obtaining one or more of the switching and load frequencies can be controlled using feedback techniques to provide stable, high-quality power to ozone-producing cells under variations in one or more of externally supplied power and load conditions. An inrush protection circuit can also be provided to selectively introduce a current-limiting resistance until an input DC bus has been sufficiently initialized as determined by measurements obtained from the DC bus. The current limiting resistance can be a positive-temperature coefficient thermistor. | 10-03-2013 |
20130257311 | VERSATILE ZERO-VOLTAGE SWITCH RESONANT INVERTER FOR INDUSTRIAL DIELECTRIC BARRIER DISCHARGE GENERATOR APPLICATIONS - A power system for a dielectric barrier discharge system, such as used for generating ozone, can include a full bridge inverter stage and parallel resonant tank outputting a signal for powering a dielectric barrier discharge cell stack. The inverter stage is controlled using a combination of pulse width modulation (PWM) and frequency modulation (FM) to enable soft switching through all load conditions—from full load to light load. A current control loop error amplifier compensator can provide a duty cycle adjustment signal to a phase shift PWM controller chip that generates the switching signals for the inverter stage. A feedback signal is also used to adjust a clock frequency time constant of the PWM controller chip to provide the FM. In one embodiment, the feedback signal is an output of an inverting amplifier connected at an output of the current control loop error amplifier compensator. | 10-03-2013 |
20140062285 | Method and Apparatus for a Large Area Inductive Plasma Source - A plasma source for providing dissociated gas to semiconductor process chamber is provided. The plasma chamber can have at least one gas inlet and at least one chamber wall for containing the gas, a plurality of magnetic cores disposed relative to the plasma chamber such that the plasma chamber passes through each of the plurality of magnetic cores. A primary winding can be coupled to the plurality of magnetic cores. The plasma chamber can generate a toroidal plasma along a plane extending through the plasma chamber and which is at least substantially parallel to a top surface of a sample holder disposed within the semiconductor process chamber. | 03-06-2014 |
20140262746 | Toroidal plasma Abatement Apparatus and Method - An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated. | 09-18-2014 |