Patent application number | Description | Published |
20120147667 | VARIABLE RESISTANCE MEMORY PROGRAMMING - Some embodiments include a device having memory elements and methods of storing information into the memory elements. Such methods can include increasing a temperature of a portion of a memory element for a time interval during an operation to change a resistance state of the memory element. After the time interval, the methods can include decreasing the temperature of the portion of the memory element. Decreasing the temperature can be performed using a signal having a first negative slope and a second negative slope. Other embodiments are described. | 06-14-2012 |
20130094275 | STABILIZATION OF RESISTIVE MEMORY - The present disclosure includes apparatuses and methods including stabilization of resistive memory. A number of embodiments include applying a programming signal to a resistive memory cell, wherein the programming signal includes a first portion having a first polarity and a second portion having a second polarity, wherein the second polarity is opposite the first polarity. | 04-18-2013 |
20130107605 | PERFORMING FORMING PROCESSES ON RESISTIVE MEMORY | 05-02-2013 |
20130223163 | SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMORY CELL - Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions. | 08-29-2013 |
20130258754 | VARIABLE RESISTANCE MEMORY PROGRAMMING - Some embodiments include a device having memory elements and methods of storing information into the memory elements. Such methods can include increasing a temperature of a portion of a memory element for a time interval during an operation to change a resistance state of the memory element. After the time interval, the methods can include decreasing the temperature of the portion of the memory element. Decreasing the temperature can be performed using a signal having a first negative slope and a second negative slope. Other embodiments are described. | 10-03-2013 |
20130334483 | METHODS OF FORMING RESISTIVE MEMORY ELEMENTS AND RELATED RESISTIVE MEMORY ELEMENTS, RESISTIVE MEMORY CELLS, AND RESISTIVE MEMORY DEVICES - A method of forming a resistive memory element comprises forming an oxide material over a first electrode. The oxide material is exposed to a plasma process to form a treated oxide material. A second electrode is formed on the treated oxide material. Additional methods of forming a resistive memory element, as well as related resistive memory elements, resistive memory cells, and resistive memory devices are also described. | 12-19-2013 |
20140112052 | Memory Programming Methods And Memory Systems - Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described. | 04-24-2014 |
20140313814 | PERFORMING FORMING PROCESSES ON RESISTIVE MEMORY - The present disclosure includes apparatuses and methods for performing forming processes on resistive memory. A number of embodiments include applying a formation signal to the storage element of a resistive memory cell, wherein the formation signal includes a first portion having a first polarity and a first amplitude, a second portion having a second polarity and a second amplitude, wherein the second polarity is opposite the first polarity and the second amplitude is smaller than the first amplitude, and a third portion having the first polarity and a third amplitude that is smaller than the first amplitude. | 10-23-2014 |
20140328120 | SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMORY CELL - Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions. | 11-06-2014 |