Patent application number | Description | Published |
20130159843 | Methods, Apparatuses, Systems, and Computer Readable Media for Copying Contents from a Layout File - Methods, apparatuses, and computer readable media are disclosed for processing content information in an online environment. The method may comprise receiving a request for a copying operation to copy displayed contents in a selected area of a display page. The request may include area information associated with the selected area and page identification information associated with the display page. The method may also comprise obtaining a layout page in a layout file stored on a server based on the received page identification information, the layout page corresponding to the display page. The method may further comprise searching contents corresponding to the displayed contents in the obtained layout page based on the area information and sending the contents to a client for performing the copying operation. | 06-20-2013 |
20130254534 | METHOD OF AND SYSTEM FOR AUTHENTICATING ONLINE READ DIGITAL CONTENT - A method of authenticating an online read right of a digital content includes: receiving an online read first request from a terminal, the first request including first user information, obtaining first right information corresponding to the first user information, generating a first right model, obtaining first certificate information corresponding to the first right model, generating a second request including the first right model and the first certificate information, and authenticating the first certificate information and M function rights in the first right model. | 09-26-2013 |
20140298428 | METHOD FOR ALLOWING USER ACCESS, CLIENT, SERVER, AND SYSTEM - The present invention relates to the technical field of computer application, and more particularly to a method for allowing user access, a client, a server, and a system, for solving the problem that when a user accesses a server, it cannot be determined whether the user is allowed to continue accessing the server. The method comprises: a server receiving a type identifier and/or server identifier and user identity information sent from a client, for each application accessed by a login user, the client generating a type identifier and/or server identifier corresponding to the application; the server determining the number of type identifiers and/or server identifiers received for the user according to the user identity information, and determining whether to allow access of the user. The method can solve the problem that when a user accesses a server, it is determined whether the user is allowed to continue accessing the server. | 10-02-2014 |
20150074823 | SERVER, TERMINAL AND DIGITAL COPYRIGHT MANAGEMENT METHOD - The present invention provides a server comprising: a selection unit configured to select a target content from each digital file among a plurality of digital files according to a selection instruction received from a terminal; an extraction unit configured to extract privilege information corresponding to the target content from file key information corresponding to each digital file among the plurality of digital files, so as to obtain a plurality of privilege information; an authorization information generation unit configured to generate authorization information according to the plurality of the privilege information; and a processing unit configured to, when an authorization request is received from the terminal, transmit the authorization information to the terminal so that the terminal performs predetermined operations on the target content according to the authorization information. The present invention further provides a terminal and a digital copyright management method. | 03-12-2015 |
Patent application number | Description | Published |
20110227163 | SEMICONDUCTOR DEVICE - The present invention relates to a semiconductor device. Interface layers of different thickness or different materials are used in the NMOS region and the PMOS region of the semiconductor substrate, which not only effectively reduce EOT of the device, especially EOT of the PMOS device, but also increase the electron mobility of the device, especially the electron mobility of the NMOS device, thereby effectively improving the overall performance of the device. | 09-22-2011 |
20110254063 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a MOS device, which comprises: a substrate; an interface layer thin film formed on the substrate; a high k gate dielectric layer formed on the interface layer thin film; and a metal gate formed on the high k gate dielectric layer. The metal gate comprises, upwardly in order, a metal gate work function layer, an oxygen absorption element barrier layer, a metal gate oxygen absorbing layer, a metal gate barrier layer and a polysilicon layer. A metal gate oxygen absorbing layer is introduced into the metal gate for the purpose of preventing the outside oxygen from coming into the interface layer and absorbing the oxygen in the interface layer during a annealing process, such that the interface layer is reduced to be thinner and the EOT of MOS devices are effectively reduced; meanwhile, by adding an oxygen absorption element barrier layer, the “oxygen absorption element” is prevented from diffusing into the high k gate dielectric layer and giving rise to unfavorable impact thereon; in this way, the high k/metal gate system can be more easily integrated, and the performance of the device can be further improved accordingly. | 10-20-2011 |
20110254093 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device and a method of manufacturing the same are provided. A multi-component high-k interface layer containing elements of the substrate is formed from a ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment. Thus, the present invention may also avoid the growth of the interface layers and the degradation of carrier mobility. Furthermore, the present invention may further alleviate the problem of high interface state and interface roughness caused by direct contact of the high-k gate dielectric layer with high dielectric constant and the substrate, and thus the overall performance of the device is effectively enhanced. | 10-20-2011 |
20110260255 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a method of manufacturing a semiconductor device. After depositing the metal gate electrode material, a layer of oxygen molecule catalyzing layer having a catalyzing function to the oxygen molecules is deposited, and afterwards, a low-temperature PMA annealing process is used to decompose the oxygen molecules in the annealing atmosphere into more active oxygen atoms. These oxygen atoms are diffused into the high-k gate dielectric film through the metal gate to supplement the oxygen vacancies in the high-k film, in order to alleviate oxygen vacancies in the high-k film and improve the quality of the high-k film. According to the present invention, the oxygen vacancies and defects of high-k gate dielectric film will be alleviated, and further, growth of SiO | 10-27-2011 |
20120012939 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a semiconductor device, comprising: a semiconductor substrate having a first region and a second region; a first gate structure belong to a PMOS device on the first region; a second gate structure belong to an nMOS device on the second region; a multiple-layer first sidewall spacer on sidewalls of the first gate structure, wherein a layer of the multiple-layer first sidewall spacer adjacent to the first gat structure is an oxide layer; a multiple-layer second sidewall spacer on sidewalls of the second gate structure, wherein a layer of the multiple layers of second sidewall spacer adjacent to the first gat structure is a nitride layer. Application of the present invention may alleviate the oxygen vacancy in a high-k gate dielectric in a pMOS device, and further avoid the problem of EOT growth of an nMOS device during the high-temperature thermal treatment process, and therefore effectively improve the overall performance of the high-k gate dielectric CMOS device. | 01-19-2012 |
20120021596 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - The present invention relates to the field of semiconductor manufacturing. The present invention provides a method of manufacturing a semiconductor device, which comprises: providing a semiconductor substrate; forming an interface layer, a gate dielectric layer and a gate electrode on the substrate; forming a metal oxygen absorption layer on the gate electrode; performing a thermal annealing process on the semiconductor device so that the metal oxygen absorption layer absorbs oxygen in the interface layer and the thickness of the interface layer is reduced. By means of the present invention, the thickness of the interface layer can be reduced on one hand, and on the other hand the metal in the metal oxygen absorption layer is made to diffuse into the gate electrode and/or the gate dielectric layer through the annealing process, which further achieves the effects of adjusting the effective work function and controlling the threshold voltage. | 01-26-2012 |
20120261761 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device is provided. A multi-component high-k interface layer containing elements of the substrate is formed from an ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment. | 10-18-2012 |
20130232110 | METHOD AND APPARATUS FOR SAVING A DOCUMENT - A method and an apparatus for saving a document are disclosed. The method comprises combining data which have been modified but not saved and incremental saving data to be combined. The method further comprises replacing the incremental saving data with the combined data. | 09-05-2013 |
20130335424 | CHARACTER DISPLAY METHOD AND DEVICE - A character display technique relating to computer information processing to improve the display of characters. Whether a thickening process on a glyph outline corresponding to a character to be displayed is needed is determined by calculating a mean grayscale value of pixels of a grayscale bitmap of the glyph outline. if thickening is to be performed, the thickening amount is determined on the basis of the mean grayscale value of pixels, and the thickened glyph outline is output for display, thereby minimizing problems of fading of the displayed color, fuzzy strokes and the like due to strokes that are too narrow, and thus improving the character display effect. | 12-19-2013 |
20140015062 | Method for Forming Gate Structure, Method for Forming Semiconductor Device, and Semiconductor Device - An embodiment of the present disclosure provides a method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate trench, and each of the gate trenches is provided at a bottom portion with a gate dielectric layer; forming a gate dielectric capping layer on a surface of the substrate; forming an oxygen scavenging element layer on the gate dielectric capping layer; forming an etching stop layer on the oxygen scavenging element layer; forming a work function adjustment layer on the etching stop layer; performing metal layer deposition and annealing process to fill the gate trenches with a metal layer; and removing the metal layer outside the gate trenches. | 01-16-2014 |
20140015063 | Method for Forming Gate Structure, Method for Forming Semiconductor Device, and Semiconductor Device - A method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate trench, and each of the gate trenches is provided at a bottom portion with a gate dielectric layer; forming a gate dielectric capping layer on the substrate; forming an etching stop layer on the gate dielectric capping layer; forming an oxygen scavenging element layer on the etching stop layer; forming a first work function adjustment layer on the oxygen scavenging element layer; etching the first work function adjustment layer above the nMOSFET area; forming a second work function adjustment layer on the surface of the substrate; metal layer depositing and annealing to fill the gate trenches with a metal layer; and removing the metal layer outside the gate trenches. | 01-16-2014 |
20140297792 | SERVER, DATA CACHING METHOD, AND COMMUNICATION SYSTEM - It is provided are a server including: a storage module for storing original files and characteristics of the original files; an encoding module for encoding the original files stored in the storage module to generate encoded symbols; an information acquisition module for communicating with at least one transmission node and acquiring state information from the at least one transmission node; a control module for calculating a number of the encoded symbols to be sent to the at least one transmission node for caching based on the characteristics of the original files stored in the storage module and the state information of the at least one transmission node acquired by the information acquisition module; and a communication module for sending the encoded symbols to the at least one transmission node based on the number of the encoded symbols calculated by the control module. | 10-02-2014 |
20140317494 | METHOD AND DEVICE FOR UPDATING ELECTRONIC DOCUMENT - A method for a device to update an electronic document includes obtaining data update information and use record information of the electronic document, the data update information including a first position in the electronic document where an updating is to be performed, the use record information including a second position; determining whether the first position in the data update information is before the second position in the use record information; adjusting the use record information according to the data update information, if it is determined that the first position in the data update information is before the second position in the use record information; and updating the electronic document according to the data update information and the adjusted use record information. | 10-23-2014 |