Patent application number | Description | Published |
20080315753 | PHOSPHORESCENT OLED HAVING DOUBLE EXCITON-BLOCKING LAYERS - An organic light-emitting device comprising an anode; a cathode; a hole-transporting layer disposed between the anode and the cathode; a phosphorescent light-emitting layer disposed between the hole-transporting layer and the cathode, wherein the phosphorescent light-emitting layer includes at least one host and at least one phosphorescent dopant; a first exciton-blocking layer disposed between the hole-transporting layer and the phosphorescent light-emitting layer; wherein the first exciton-blocking layer has a triplet energy greater than the triplet energy of the host in the phosphorescent light-emitting layer; and a second exciton-blocking layer disposed between the first exciton-blocking layer and the phosphorescent light-emitting layer, wherein the second exciton-blocking layer is in contact with the phosphorescent light-emitting layer, and wherein the second exciton-blocking layer has a triplet energy less than the triplet energy of the first exciton-blocking layer. | 12-25-2008 |
20090109435 | DEVICE CONTAINING NON-BLINKING QUANTUM DOTS - An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns. | 04-30-2009 |
20100052516 | EMITTING COMPLEX FOR ELECTROLUMINESCENT DEVICES - An OLED device including a cathode, an anode, and having therebetween a phosphorescent light-emitting layer that contains a light-emitting organometallic complex including a precious metal, a first ligand including an imidazole group and a second nitrogen heterocycle group, and at least one second different ligand. | 03-04-2010 |
20100289001 | DEVICE CONTAINING NON-BLINKING QUANTUM DOTS - An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns. | 11-18-2010 |
20100289003 | MAKING COLLOIDAL TERNARY NANOCRYSTALS - A method of making a colloidal solution of ternary semiconductor nanocrystals, includes providing binary semiconductor cores; forming first shells on the binary semiconductor cores containing one of the components of the binary semiconductor cores and another component which when combined with the binary semiconductor will form a ternary semiconductor, thereby providing core/shell nanocrystals; and annealing the core/shell nanocrystals to form ternary semiconductor nanocrystals containing a gradient in alloy composition. | 11-18-2010 |
20110073835 | SEMICONDUCTOR NANOCRYSTAL FILM - A film comprised of semiconductor nanocrystals having an aspect ratio less than 3:1 and a diameter greater than 10 nanometers, wherein the film has less than 5% by volume of organic material. | 03-31-2011 |
20110076839 | MAKING FILMS COMPOSED OF SEMICONDUCTOR NANOCRYSTALS - A method of making a film of large II-VI nanocrystals, including: providing a mixture of column II, column VI chemical precursors, and coordinating solvents selected from amines, phosphines, phosphine oxides, esters, ethers, or combinations thereof by: injecting under heat a higher molar quantity of column II chemical precursor than column VI chemical precursor; and ii) increasing the ratio of column VI to column II chemical precursors during the course of the reaction while still heating the mixture until the molar ratio of column VI chemical precursor to column II chemical precursor is in a range of 1 to 10; heating the mixture to grow large nanocrystals functionalized with coordinating ligands; washing the grown nanocrystals to remove the unreacted precursors and excess coordinating solvents; and d) depositing the large II-VI nanocrystals on a substrate in order to form the film. | 03-31-2011 |
20110175030 | PREPARING LARGE-SIZED EMITTING COLLOIDAL NANOCRYSTALS - A method of making a colloidal solution of ternary AIAIIB nanocrystals, wherein AI and AII are independently selected from an element of periodic table subgroup IIB, when B represents an element of periodic table main group VI; or AI and AII are independently selected from an element from periodic table main group III, when B represents an element of periodic table main group V. The method providing a mixture of AI in a suitable form for the generation of a nanocrystal, and coordinating solvents including at least 30 wt % of fatty acids; heating the reaction mixture for a suitable time, adding B in a suitable form for the generation of a nanocrystal, adding AII in a suitable form for the generation of a nanocrystals; and heating the reaction mixture for a sufficient period of time at a temperature suitable for forming nanocrystal AIAIIB. | 07-21-2011 |
20110175054 | DEVICE CONTAINING LARGE-SIZED EMITTING COLLOIDAL NANOCRYSTALS - A device using a layer containing emitting semiconductor nanocrystals wherein each emitting nanocrystal includes a core structure wherein the cores have an aspect ratio less than 2:1 and a diameter greater than 10 nanometers and a protective shell surrounding the core | 07-21-2011 |
20120205586 | INDIUM PHOSPHIDE COLLOIDAL NANOCRYSTALS - A method of making a colloidal solution of indium phosphide semiconductor nanocrystals, includes forming a first solution by combining solvents and ligands; and heating the first solution to a temperature equal to or higher than 290° C. and, while heating, adding to the first solution, a second solution containing trialkylindium, a phosphorus precursor and solvents and ligands so that a reaction takes place that forms a colloidal solution of indium phosphide semiconductor nanocrystals. The method further includes forming core shell indium phosphide semiconductor nanocrystals by forming semiconducting shells on the nanocrystals. | 08-16-2012 |